
WMS14P03T1 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -53A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -53A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -53A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -53A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 449 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
14+ | 31.64 грн |
23+ | 17.09 грн |
28+ | 14.07 грн |
79+ | 11.44 грн |
218+ | 10.83 грн |
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Технічний опис WMS14P03T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -53A; 3W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -14A, Pulsed drain current: -53A, Power dissipation: 3W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 8mΩ, Mounting: SMD, Gate charge: 35nC, Kind of package: reel; tape, Kind of channel: enhancement.