WMS15P02T1 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -60A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -60A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 33.86 грн |
| 29+ | 13.83 грн |
| 35+ | 11.48 грн |
| 100+ | 10.85 грн |
| 102+ | 9.12 грн |
| 280+ | 8.65 грн |
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Технічний опис WMS15P02T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -60A; 3.1W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -15A, Pulsed drain current: -60A, Power dissipation: 3.1W, Case: SOP8, Gate-source voltage: ±10V, On-state resistance: 8.2mΩ, Mounting: SMD, Gate charge: 43nC, Kind of package: reel; tape, Kind of channel: enhancement.