WMS175DN10LG4 WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.5A; Idm: 34A; 3.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.5A; Idm: 34A; 3.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 52.59 грн |
| 13+ | 32.06 грн |
| 25+ | 28.75 грн |
| 41+ | 22.76 грн |
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Технічний опис WMS175DN10LG4 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.5A; Idm: 34A; 3.1W; SOP8, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 8.5A, Pulsed drain current: 34A, Power dissipation: 3.1W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 21mΩ, Mounting: SMD, Gate charge: 22.5nC, Kind of package: reel; tape, Kind of channel: enhancement.