WMT04N10TS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 28.78 грн |
| 36+ | 11.16 грн |
| 47+ | 8.49 грн |
| 100+ | 7.47 грн |
| 132+ | 7.00 грн |
| 250+ | 6.68 грн |
| 362+ | 6.60 грн |
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Технічний опис WMT04N10TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOT223, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3.5A, Pulsed drain current: 14A, Power dissipation: 3.1W, Case: SOT223, Gate-source voltage: ±20V, On-state resistance: 0.13Ω, Mounting: SMD, Gate charge: 4nC, Kind of package: reel; tape, Kind of channel: enhancement.