WMT04P06TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; Idm: -15.2A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 2.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; Idm: -15.2A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 2.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 465 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 42.33 грн |
| 24+ | 16.43 грн |
| 32+ | 12.42 грн |
| 89+ | 10.45 грн |
| 244+ | 9.90 грн |
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Технічний опис WMT04P06TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; Idm: -15.2A; 2.7W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -3.8A, Pulsed drain current: -15.2A, Power dissipation: 2.7W, Case: SOT223, Gate-source voltage: ±20V, On-state resistance: 0.115Ω, Mounting: SMD, Gate charge: 30nC, Kind of package: reel; tape, Kind of channel: enhancement.