WMT04P10TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 3.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 3.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 445 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 31.36 грн |
| 25+ | 15.33 грн |
| 28+ | 13.79 грн |
| 81+ | 11.19 грн |
| 222+ | 10.58 грн |
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Технічний опис WMT04P10TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -3.6A, Pulsed drain current: -14.4A, Power dissipation: 3.5W, Case: SOT223, Gate-source voltage: ±20V, On-state resistance: 0.17Ω, Mounting: SMD, Gate charge: 19nC, Kind of package: reel; tape, Kind of channel: enhancement.