WMT05N10T1 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 4.2W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Gate charge: 20.6nC
On-state resistance: 0.1Ω
Drain current: 5A
Power dissipation: 4.2W
Pulsed drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
| Кількість | Ціна |
|---|---|
| 10+ | 45.19 грн |
| 25+ | 17.46 грн |
| 32+ | 13.18 грн |
| 100+ | 11.58 грн |
| 250+ | 10.41 грн |
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Технічний опис WMT05N10T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 4.2W; SOT223, Mounting: SMD, Case: SOT223, Kind of package: reel; tape, Gate charge: 20.6nC, On-state resistance: 0.1Ω, Drain current: 5A, Power dissipation: 4.2W, Pulsed drain current: 20A, Gate-source voltage: ±20V, Drain-source voltage: 100V, Polarisation: unipolar, Kind of channel: enhancement, Type of transistor: N-MOSFET.