WMT07N10TS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 28A; 4.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 28A
Power dissipation: 4.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 28A; 4.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 28A
Power dissipation: 4.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 490 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 33.86 грн |
| 25+ | 15.80 грн |
| 33+ | 11.95 грн |
| 93+ | 9.90 грн |
| 250+ | 9.51 грн |
| 256+ | 9.35 грн |
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Технічний опис WMT07N10TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 28A; 4.2W; SOT223, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 6.8A, Pulsed drain current: 28A, Power dissipation: 4.2W, Case: SOT223, Gate-source voltage: ±20V, On-state resistance: 88mΩ, Mounting: SMD, Gate charge: 14.2nC, Kind of package: reel; tape, Kind of channel: enhancement.