WMX3N150D1 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 90W
Case: TO3PF
Mounting: THT
Kind of channel: enhancement
Technology: WMOS™ D1
Kind of package: tube
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 1.5kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 90W
Case: TO3PF
Mounting: THT
Kind of channel: enhancement
Technology: WMOS™ D1
Kind of package: tube
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 1.5kV
на замовлення 355 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 87.28 грн |
| 30+ | 78.05 грн |
| 120+ | 69.66 грн |
| 300+ | 66.30 грн |
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Технічний опис WMX3N150D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W, Type of transistor: N-MOSFET, Polarisation: unipolar, Power dissipation: 90W, Case: TO3PF, Mounting: THT, Kind of channel: enhancement, Technology: WMOS™ D1, Kind of package: tube, Gate charge: 40nC, On-state resistance: 5.7Ω, Drain current: 3A, Pulsed drain current: 12A, Gate-source voltage: ±30V, Drain-source voltage: 1.5kV.