Технічний опис WNSC2D301200CW6Q Ween
Description: DIODE ARR SIC 1200V 30A TO247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 30A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A, Current - Reverse Leakage @ Vr: 150 µA @ 1200 V.
Інші пропозиції WNSC2D301200CW6Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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WNSC2D301200CW6Q | Виробник : WeEn Semiconductors |
 Description: DIODE ARR SIC 1200V 30A TO247-3Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 150 µA @ 1200 V |
товару немає в наявності |