Технічний опис WNSC2M20120B76J Ween
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 109.2A; Idm: 300A; 789W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 109.2A, Pulsed drain current: 300A, Power dissipation: 789W, Case: TO263-7, Gate-source voltage: -4...18V, On-state resistance: 27.6mΩ, Mounting: SMD, Gate charge: 215nC, Kind of package: reel; tape, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.
Інші пропозиції WNSC2M20120B76J
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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WNSC2M20120B76J | Виробник : WeEn Semiconductors |
 SiC MOSFETs WNSC2M20120B7/TO263-7L/REEL 13" Q1/T1 *STANDARD MARK SMD |
товару немає в наявності |
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| WNSC2M20120B76J | Виробник : WeEn Semiconductors |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 109.2A; Idm: 300A; 789W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 109.2A Pulsed drain current: 300A Power dissipation: 789W Case: TO263-7 Gate-source voltage: -4...18V On-state resistance: 27.6mΩ Mounting: SMD Gate charge: 215nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |