Технічний опис WNSC2M20120R6Q Ween
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 94A, Pulsed drain current: 200A, Power dissipation: 750W, Case: TO247-4, Gate-source voltage: -12...22V, On-state resistance: 20mΩ, Mounting: THT, Gate charge: 32nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: Kelvin terminal, кількість в упаковці: 1 шт.
Інші пропозиції WNSC2M20120R6Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| WNSC2M20120R6Q | Виробник : WeEn Semiconductors |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 94A Pulsed drain current: 200A Power dissipation: 750W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 20mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
товар відсутній |
||
 |
WNSC2M20120R6Q | Виробник : WeEn Semiconductors |
MOSFET WNSC2M20120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK |
товар відсутній |
|
| WNSC2M20120R6Q | Виробник : WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 94A Pulsed drain current: 200A Power dissipation: 750W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 20mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
товар відсутній |