WNSC2M20120R6Q WeEn Semiconductors

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 94A, Pulsed drain current: 200A, Power dissipation: 750W, Case: TO247-4, Gate-source voltage: -12...22V, On-state resistance: 20mΩ, Mounting: THT, Gate charge: 32nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.