Технічний опис WNSC2M30120R6Q Ween
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75.2A; Idm: 200A; 652W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 75.2A, Pulsed drain current: 200A, Power dissipation: 652W, Case: TO247-4, Gate-source voltage: -4...18V, On-state resistance: 48mΩ, Mounting: THT, Gate charge: 151nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.
Інші пропозиції WNSC2M30120R6Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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WNSC2M30120R6Q | Виробник : WeEn Semiconductors |
 SiC MOSFETs WNSC2M30120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK |
товару немає в наявності |
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| WNSC2M30120R6Q | Виробник : WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75.2A; Idm: 200A; 652W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 75.2A Pulsed drain current: 200A Power dissipation: 652W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 48mΩ Mounting: THT Gate charge: 151nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |