Технічний опис WNSC2M40120R6Q Ween
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 52A, Pulsed drain current: 100A, Power dissipation: 405W, Case: TO247-4, Gate-source voltage: -12...22V, On-state resistance: 55mΩ, Mounting: THT, Gate charge: 19nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.
Інші пропозиції WNSC2M40120R6Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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WNSC2M40120R6Q | Виробник : WeEn Semiconductors |
 SiC MOSFETs WNSC2M40120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK |
товару немає в наявності |
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| WNSC2M40120R6Q | Виробник : WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 52A Pulsed drain current: 100A Power dissipation: 405W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 55mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |