Технічний опис WNSC6D10650T6J Ween
Description: DIODE SIL CARBIDE 650V 10A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 500pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: 5-DFN (8x8), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Інші пропозиції WNSC6D10650T6J
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
WNSC6D10650T6J | Виробник : WeEn Semiconductors |
 Description: DIODE SIL CARBIDE 650V 10A 5DFNPackaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 500pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
товару немає в наявності |
|
 |
WNSC6D10650T6J | Виробник : WeEn Semiconductors |
SiC Schottky Diodes WNSC6D10650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD |
товару немає в наявності |
|
| WNSC6D10650T6J | Виробник : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: DFN8x8N Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. load current: 20A Max. forward impulse current: 75A Kind of package: reel; tape |
товару немає в наявності |