WSJM65R099DTLJ WeEn Semiconductors

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 16A, Pulsed drain current: 100A, Power dissipation: 147W, Case: TOLL, Gate-source voltage: ±30V, On-state resistance: 99mΩ, Mounting: SMD, Gate charge: 57nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.