Технічний опис WSJM65R170XQ WeEn Semiconductors
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 14A, Pulsed drain current: 72A, Power dissipation: 36W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 0.17Ω, Mounting: THT, Gate charge: 38nC, Kind of package: tube, Kind of channel: enhancement.
Інші пропозиції WSJM65R170XQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| WSJM65R170XQ | Виробник : WeEn Semiconductors |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 14A Pulsed drain current: 72A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
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