XP10NA8R2LMT YAGEO XSEMI
Виробник: YAGEO XSEMI
Description: MOSFET N CH 100V 17.7A PMPAK
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs: 68.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PMPAK (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
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Технічний опис XP10NA8R2LMT YAGEO XSEMI
Description: MOSFET N CH 100V 17.7A PMPAK, Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 80 V, Gate Charge (Qg) (Max) @ Vgs: 68.8 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PMPAK (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 5W (Ta), 69W (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 66A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR).