XP10NA8R4MT YAGEO XSEMI
Виробник: YAGEO XSEMIDescription: MOSFET N CH 100V 17.8A PMPAK5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.8A (Ta), 66.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 12A, 10V
Power Dissipation (Max): 5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PMPAK (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 80 V
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Технічний опис XP10NA8R4MT YAGEO XSEMI
Description: MOSFET N CH 100V 17.8A PMPAK5X6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.8A (Ta), 66.5A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 12A, 10V, Power Dissipation (Max): 5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PMPAK (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 68.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 80 V.