XP6932MT YAGEO XSEMI
Виробник: YAGEO XSEMIDescription: MOSFET 2N-CH 30V 14.2A 8PMPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.78W (Ta), 2.08W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 28A (Tc), 22.9A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 15V, 3920pF @ 15V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 14A, 10V, 2.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 10V, 64nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PMPAK (5x6)
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Технічний опис XP6932MT YAGEO XSEMI
Description: MOSFET 2N-CH 30V 14.2A 8PMPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.78W (Ta), 2.08W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 28A (Tc), 22.9A (Ta), 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 15V, 3920pF @ 15V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 14A, 10V, 2.5mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 10V, 64nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PMPAK (5x6).