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YJD112005PYG4 YANGJIE TECHNOLOGY

YJD112005PYG4.pdf
Виробник: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220AC; Ir: 5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.9V
Max. forward impulse current: 40A
Leakage current: 5µA
Kind of package: tube
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Технічний опис YJD112005PYG4 YANGJIE TECHNOLOGY

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220AC; Ir: 5uA, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 1.2kV, Load current: 8A, Semiconductor structure: single diode, Case: TO220AC, Max. forward voltage: 1.9V, Max. forward impulse current: 40A, Leakage current: 5µA, Kind of package: tube.