YJL03G10A YANGJIE TECHNOLOGY
Виробник: YANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 100V
Drain current: 3A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 121A
на замовлення 365 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 99+ | 4.19 грн |
| 109+ | 3.52 грн |
| 250+ | 3.12 грн |
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Технічний опис YJL03G10A YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23, Mounting: SMD, Case: SOT23, Drain-source voltage: 100V, Drain current: 3A, On-state resistance: 0.14Ω, Type of transistor: N-MOSFET, Power dissipation: 1.2W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 4.3nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 121A.