YJL03G10A YANGJIE TECHNOLOGY
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 12A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 77+ | 5.91 грн |
| 100+ | 4.93 грн |
| 250+ | 4.36 грн |
Відгуки про товар
Написати відгук
Технічний опис YJL03G10A YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 12A; 1.2W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3A, Pulsed drain current: 12A, Power dissipation: 1.2W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 0.14Ω, Mounting: SMD, Gate charge: 4.3nC, Kind of package: reel; tape, Kind of channel: enhancement.