
YJL2300A YANGJIE TECHNOLOGY

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 18A
Mounting: SMD
на замовлення 2960 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
130+ | 3.42 грн |
190+ | 2.05 грн |
500+ | 1.82 грн |
570+ | 1.61 грн |
1560+ | 1.53 грн |
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Технічний опис YJL2300A YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W, Case: SOT23, Drain-source voltage: 20V, Drain current: 3.6A, On-state resistance: 49mΩ, Type of transistor: N-MOSFET, Power dissipation: 1W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 4.2nC, Technology: TRENCH POWER LV, Kind of channel: enhancement, Gate-source voltage: ±10V, Pulsed drain current: 18A, Mounting: SMD.