YJL2312AQ Yangjie Technology
Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
| Кількість | Ціна |
|---|---|
| 3000+ | 5.02 грн |
| 15000+ | 4.53 грн |
| 30000+ | 4.30 грн |
| 60000+ | 3.75 грн |
| 120000+ | 3.40 грн |
| 300000+ | 3.12 грн |
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Технічний опис YJL2312AQ Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si, Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1V @ 250µA, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.