YJL3407AL YANGJIE TECHNOLOGY
Виробник: YANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4380 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 90+ | 4.66 грн |
| 150+ | 2.71 грн |
| 400+ | 2.31 грн |
| 1080+ | 2.18 грн |
| 3000+ | 2.15 грн |
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Технічний опис YJL3407AL YANGJIE TECHNOLOGY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W, Type of transistor: P-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -3.2A, Pulsed drain current: -15A, Power dissipation: 1.5W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 68mΩ, Mounting: SMD, Gate charge: 6.8nC, Kind of package: reel; tape, Kind of channel: enhancement.