YJQ15GP10A YANGJIE TECHNOLOGY
Виробник: YANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3946 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 20.78 грн |
| 28+ | 14.11 грн |
| 73+ | 12.35 грн |
| 199+ | 11.67 грн |
| 500+ | 11.29 грн |
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Технічний опис YJQ15GP10A YANGJIE TECHNOLOGY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A, Type of transistor: P-MOSFET, Technology: SPLIT GATE TRENCH, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -9.5A, Pulsed drain current: -45A, Power dissipation: 17.2W, Case: DFN3.3x3.3 EP, Gate-source voltage: ±20V, On-state resistance: 0.12Ω, Mounting: SMD, Gate charge: 3.98nC, Kind of package: reel; tape, Kind of channel: enhancement.