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YJQ3407A YANGJIE TECHNOLOGY

YJQ3407A.pdf Виробник: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.4A; 1.4W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.4A
Pulsed drain current: -22A
Power dissipation: 1.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 11.65nC
Kind of package: reel; tape
Kind of channel: enhancement
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Технічний опис YJQ3407A YANGJIE TECHNOLOGY

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.4A; 1.4W, Type of transistor: P-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -4.4A, Pulsed drain current: -22A, Power dissipation: 1.4W, Case: DFN2020-6, Gate-source voltage: ±20V, On-state resistance: 64mΩ, Mounting: SMD, Gate charge: 11.65nC, Kind of package: reel; tape, Kind of channel: enhancement.