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YJQ35N04A Yangjie Technology
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 13.75 грн |
| 25000+ | 12.52 грн |
| 50000+ | 11.80 грн |
| 100000+ | 10.33 грн |
| 200000+ | 9.32 грн |
| 500000+ | 8.65 грн |
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Технічний опис YJQ35N04A Yangjie Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W, Type of transistor: N-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 23A, Pulsed drain current: 120A, Power dissipation: 40W, Case: DFN3.3x3.3, Gate-source voltage: ±20V, On-state resistance: 10mΩ, Mounting: SMD, Gate charge: 29nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції YJQ35N04A за ціною від 11.03 грн до 16.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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YJQ35N04A | YANGJIE TECHNOLOGY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 23A Pulsed drain current: 120A Power dissipation: 40W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 840 шт: термін постачання 14-30 дні (днів) |
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| YJQ35N04A |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 40W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 40W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 840 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 16.34 грн |
| 35+ | 13.76 грн |
| 100+ | 12.19 грн |
| 500+ | 11.03 грн |