YJQ4666B YANGJIE TECHNOLOGY
Виробник: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -16V
Drain current: -5.6A
Pulsed drain current: -28A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 100+ | 4.98 грн |
| 120+ | 3.57 грн |
| 500+ | 3.27 грн |
Відгуки про товар
Написати відгук
Технічний опис YJQ4666B YANGJIE TECHNOLOGY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W, Type of transistor: P-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: -16V, Drain current: -5.6A, Pulsed drain current: -28A, Power dissipation: 2.2W, Case: DFN2020-6, Gate-source voltage: ±10V, On-state resistance: 60mΩ, Mounting: SMD, Gate charge: 7.2nC, Kind of package: reel; tape, Kind of channel: enhancement.