Продукція > YANGJIE TECHNOLOGY > YJS12G06A
YJS12G06A

YJS12G06A YANGJIE TECHNOLOGY

pVersion=0046&contRep=ZT&docId=005056AB82531EE98AC0E07ABDDA18BF&compId=YJS12G06A.pdf?ci_sign=c8423807c8ae6f4e1095d67b6d051bb44fe006cc Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 7.5A; SOP8
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Pulsed drain current: 48A
Power dissipation: 1.24W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис YJS12G06A YANGJIE TECHNOLOGY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 7.5A; SOP8, Type of transistor: N-MOSFET, Technology: SPLIT GATE TRENCH, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 7.5A, Pulsed drain current: 48A, Power dissipation: 1.24W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 13mΩ, Mounting: SMD, Gate charge: 31nC, Kind of package: reel; tape, Kind of channel: enhancement.