YJS12N10A YANGJIE TECHNOLOGY
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.6A
Pulsed drain current: 120A
Power dissipation: 3.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.6A
Pulsed drain current: 120A
Power dissipation: 3.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
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Технічний опис YJS12N10A YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A, Type of transistor: N-MOSFET, Technology: SPLIT GATE TRENCH, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 7.6A, Pulsed drain current: 120A, Power dissipation: 3.3W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 17mΩ, Mounting: SMD, Gate charge: 80nC, Kind of package: reel; tape, Kind of channel: enhancement.