ZVN4306GTC Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 2.1A SOT223
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
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Технічний опис ZVN4306GTC Diodes Incorporated
Description: MOSFET N-CH 60V 2.1A SOT223, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: SOT-223-3, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 3W (Ta), Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V, Drain to Source Voltage (Vdss): 60 V.