ZVP2120GTC Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 200V 200MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис ZVP2120GTC Diodes Incorporated
Description: MOSFET P-CH 200V 200MA SOT223, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V, Drain to Source Voltage (Vdss): 200 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-223-3, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).