ZVP3310FTC Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 75MA SOT23-3
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V
Current - Continuous Drain (Id) @ 25°C: 75mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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Технічний опис ZVP3310FTC Diodes Incorporated
Description: MOSFET P-CH 100V 75MA SOT23-3, Part Status: Obsolete, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 330mW (Ta), Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V, Current - Continuous Drain (Id) @ 25°C: 75mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.