ZXM61P02FTC Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 900MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис ZXM61P02FTC Diodes Incorporated
Description: MOSFET P-CH 20V 900MA SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 625mW (Ta), Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).