ZXM64N02XTC Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 5.4A 8MSOP
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Supplier Device Package: 8-MSOP
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис ZXM64N02XTC Diodes Incorporated
Description: MOSFET N-CH 20V 5.4A 8MSOP, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Supplier Device Package: 8-MSOP, Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Packaging: Tape & Reel (TR).