ZXMN6A09DN8TC Diodes Incorporated

Description: MOSFET 2N-CH 60V 4.3A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V, Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V, Current - Continuous Drain (Id) @ 25°C: 4.3A, Drain to Source Voltage (Vdss): 60V, Power - Max: 1.25W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).