Продукція > RENESAS ELECTRONICS AMERICA INC > Всі товари виробника RENESAS ELECTRONICS AMERICA INC (20309) > Сторінка 105 з 339
| Фото | Назва | Виробник | Інформація |
Доступність |
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| ISL29030AIROZ-EVALZ | Renesas Electronics America Inc |
 Description: BOARD EVAL FOR ISL29030APackaging: Box Sensitivity: 530nm Voltage - Supply: 2.25V ~ 3.63V Sensor Type: Proximity, Infrared and Ambient Light Utilized IC / Part: ISL29030A Supplied Contents: Board(s) Embedded: No Part Status: Active |
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ISL85033-12VEVAL3Z | Renesas Electronics America Inc |
Description: BOARD EVAL FOR ISL85033 Packaging: Box Voltage - Output: -3.3V ~ -15V Voltage - Input: 4.5V ~ 28V Current - Output: 5A Frequency - Switching: 300kHz ~ 2MHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: ISL85033 Supplied Contents: Board(s) Main Purpose: DC/DC, Negative Inverter Outputs and Type: 1, Non-Isolated Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ISL28217FUZ | Renesas Electronics America Inc |
Description: IC OPAMP GP 2 CIRCUIT 8MSOP Packaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 440µA (x2 Channels) Slew Rate: 0.5V/µs Gain Bandwidth Product: 1.5 MHz Current - Input Bias: 80 pA Voltage - Input Offset: 4 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 43 mA Voltage - Supply Span (Min): 4.5 V Voltage - Supply Span (Max): 40 V |
на замовлення 3294 шт: термін постачання 21-31 дні (днів) |
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ISL28217FUZ-T7A | Renesas Electronics America Inc |
Description: IC OPAMP GP 2 CIRCUIT 8MSOP |
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ISL32613EFHZ-T7A | Renesas Electronics America Inc |
Description: IC DRIVER 1/0 SOT23-6 |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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ISL28217FUZ-T7A | Renesas Electronics America Inc |
Description: IC OPAMP GP 2 CIRCUIT 8MSOP |
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ISL32613EFHZ-T7A | Renesas Electronics America Inc |
Description: IC DRIVER 1/0 SOT23-6 |
на замовлення 650 шт: термін постачання 21-31 дні (днів) |
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ISL23318UFUZ-T7A | Renesas Electronics America Inc |
Description: IC DGTL POT 50KOHM 128TAP 10MSOP |
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ISL23318WFRUZ-T7A | Renesas Electronics America Inc |
Description: IC DGT POT 10KOHM 128TAP 10UTQFN |
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ISL23318WFUZ-T7A | Renesas Electronics America Inc |
Description: IC DGTL POT 10KOHM 128TAP 10MSOP |
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ISL23328TFRUZ-T7A | Renesas Electronics America Inc |
Description: IC DGTL POT 100KOHM 16UTQFN |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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ISL23328UFRUZ-T7A | Renesas Electronics America Inc |
Description: IC DGT POT 50KOHM 128TAP 16UTQFN |
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ISL23328UFVZ-T7A | Renesas Electronics America Inc |
Description: IC DGT POT 50KOHM 128TAP 14TSSOP |
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ISL23318TFUZ-T7A | Renesas Electronics America Inc |
Description: IC DGT POT 100KOHM 128TAP 10MSOP Resistance (Ohms): 100k Tolerance: ±20% Features: Selectable Address Packaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Type: Volatile Interface: I²C Configuration: Potentiometer Operating Temperature: -40°C ~ 125°C Number of Taps: 128 Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V Taper: Linear Supplier Device Package: 10-MSOP Resistance - Wiper (Ohms) (Typ): 70 Temperature Coefficient (Typ): 70ppm/°C Part Status: Active Number of Circuits: 1 |
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ISL23318UFUZ-T7A | Renesas Electronics America Inc |
Description: IC DGTL POT 50KOHM 128TAP 10MSOP |
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ISL23318WFRUZ-T7A | Renesas Electronics America Inc |
Description: IC DGT POT 10KOHM 128TAP 10UTQFN |
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ISL23318WFUZ-T7A | Renesas Electronics America Inc |
Description: IC DGTL POT 10KOHM 128TAP 10MSOP |
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ISL23328TFRUZ-T7A | Renesas Electronics America Inc |
Description: IC DGTL POT 100KOHM 16UTQFN |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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ISL23328UFRUZ-T7A | Renesas Electronics America Inc |
Description: IC DGT POT 50KOHM 128TAP 16UTQFN |
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ISL23328UFVZ-T7A | Renesas Electronics America Inc |
Description: IC DGT POT 50KOHM 128TAP 14TSSOP |
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ISL23318TFUZ-T7A | Renesas Electronics America Inc |
Description: IC DGT POT 100KOHM 128TAP 10MSOP Packaging: Cut Tape (CT) Resistance (Ohms): 100k Tolerance: ±20% Features: Selectable Address Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Type: Volatile Interface: I²C Configuration: Potentiometer Operating Temperature: -40°C ~ 125°C Number of Taps: 128 Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V Taper: Linear Supplier Device Package: 10-MSOP Resistance - Wiper (Ohms) (Typ): 70 Temperature Coefficient (Typ): 70ppm/°C Part Status: Active Number of Circuits: 1 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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ISL23418UFUZ-T7A | Renesas Electronics America Inc |
Description: IC DGTL POT 50KOHM 128TAP 10MSOP Packaging: Tape & Reel (TR) Resistance (Ohms): 50k Tolerance: ±20% Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Type: Volatile Interface: SPI Configuration: Potentiometer Operating Temperature: -40°C ~ 125°C Number of Taps: 128 Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V Taper: Linear Supplier Device Package: 10-MSOP Resistance - Wiper (Ohms) (Typ): 70 Temperature Coefficient (Typ): 85ppm/°C Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
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ISL23418WFUZ-T7A | Renesas Electronics America Inc |
Description: IC DGTL POT 10KOHM 128TAP 10MSOP Packaging: Tape & Reel (TR) Resistance (Ohms): 10k Tolerance: ±20% Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Type: Volatile Interface: SPI Configuration: Potentiometer Operating Temperature: -40°C ~ 125°C Number of Taps: 128 Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V Taper: Linear Supplier Device Package: 10-MSOP Resistance - Wiper (Ohms) (Typ): 70 Temperature Coefficient (Typ): 175ppm/°C Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
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ISL23418UFUZ-T7A | Renesas Electronics America Inc |
Description: IC DGTL POT 50KOHM 128TAP 10MSOP Packaging: Cut Tape (CT) Resistance (Ohms): 50k Tolerance: ±20% Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Type: Volatile Interface: SPI Configuration: Potentiometer Operating Temperature: -40°C ~ 125°C Number of Taps: 128 Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V Taper: Linear Supplier Device Package: 10-MSOP Resistance - Wiper (Ohms) (Typ): 70 Temperature Coefficient (Typ): 85ppm/°C Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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ISL23418WFUZ-T7A | Renesas Electronics America Inc |
Description: IC DGTL POT 10KOHM 128TAP 10MSOP Packaging: Cut Tape (CT) Resistance (Ohms): 10k Tolerance: ±20% Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Type: Volatile Interface: SPI Configuration: Potentiometer Operating Temperature: -40°C ~ 125°C Number of Taps: 128 Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V Taper: Linear Supplier Device Package: 10-MSOP Resistance - Wiper (Ohms) (Typ): 70 Temperature Coefficient (Typ): 175ppm/°C Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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ISL21010CFH333Z-TK | Renesas Electronics America Inc |
Description: IC VREF SERIES 0.2% SOT23-3 |
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ISL23318WFUZ | Renesas Electronics America Inc |
Description: IC DGTL POT 10KOHM 128TAP 10MSOP |
на замовлення 2128 шт: термін постачання 21-31 дні (днів) |
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ISL23418WFUZ | Renesas Electronics America Inc |
Description: IC DGTL POT 10KOHM 128TAP 10MSOP Packaging: Tube Resistance (Ohms): 10k Tolerance: ±20% Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Type: Volatile Interface: SPI Configuration: Potentiometer Operating Temperature: -40°C ~ 125°C Number of Taps: 128 Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V Taper: Linear Supplier Device Package: 10-MSOP Resistance - Wiper (Ohms) (Typ): 70 Temperature Coefficient (Typ): 175ppm/°C Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 161 шт: термін постачання 21-31 дні (днів) |
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ISL21010CFH330Z-TK | Renesas Electronics America Inc |
Description: IC VREF SERIES 0.2% SOT23-3 |
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ISL9211BIRU58XZ-T | Renesas Electronics America Inc |
Description: IC BATT MONITOR LI-ION 8UTDFN |
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ISL9021AIRUCZ-T | Renesas Electronics America Inc |
Description: IC REG LINEAR 1.8V 250MA 6UTDFN |
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ISL9021AIRUNZ-T | Renesas Electronics America Inc |
Description: IC REG LINEAR 3.3V 250MA 6UTDFN |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ISL9021AIRUWZ-T | Renesas Electronics America Inc |
Description: IC REG LINEAR 1.2V 250MA 6UTDFN |
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ISL9021AIRUCZ-T | Renesas Electronics America Inc |
Description: IC REG LINEAR 1.8V 250MA 6UTDFN |
на замовлення 840 шт: термін постачання 21-31 дні (днів) |
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ISL9021AIRUNZ-T | Renesas Electronics America Inc |
Description: IC REG LINEAR 3.3V 250MA 6UTDFN |
на замовлення 3473 шт: термін постачання 21-31 дні (днів) |
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ISL9021AIRUWZ-T | Renesas Electronics America Inc |
Description: IC REG LINEAR 1.2V 250MA 6UTDFN |
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RJK0353DPA-01#J0B | Renesas Electronics America Inc |
Description: MOSFET N-CH 30V 35A 8WPAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-WPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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RJK0393DPA-00#J5A | Renesas Electronics America Inc |
Description: MOSFET N-CH 30V 40A 8WPAK |
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RJK0652DPB-00#J5 | Renesas Electronics America Inc |
Description: MOSFET N-CH 60V 35A LFPAK |
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RJK0653DPB-00#J5 | Renesas Electronics America Inc |
Description: MOSFET N-CH 60V 45A LFPAK |
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RJK0656DPB-00#J5 | Renesas Electronics America Inc |
Description: MOSFET N-CH 60V 40A LFPAK |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RJK1056DPB-00#J5 | Renesas Electronics America Inc |
Description: MOSFET N-CH 100V 25A LFPAK |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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2SJ649-AZ | Renesas Electronics America Inc |
Description: MOSFET P-CH 60V 20A TO220 |
на замовлення 1475 шт: термін постачання 21-31 дні (днів) |
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| 2SJ673-AZ | Renesas Electronics America Inc |
Description: MOSFET P-CH 60V 36A TO220 |
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2SJ687-ZK-E1-AY | Renesas Electronics America Inc |
Description: MOSFET P-CH 20V 20A TO252 |
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| 2SK3793-AZ | Renesas Electronics America Inc |
Description: MOSFET N-CH 100V 12A TO220 |
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2SK3943-ZP-E1-AY | Renesas Electronics America Inc |
Description: MOSFET N-CH 40V 82A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 41A, 10V Power Dissipation (Max): 1.5W (Ta), 104W (Tc) Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 10 V |
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NP100P06PLG-E1-AY | Renesas Electronics America Inc |
Description: MOSFET P-CH 60V 100A TO263 |
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NP109N055PUJ-E1B-AY | Renesas Electronics America Inc |
Description: MOSFET N-CH 55V 110A TO263 |
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NP110N03PUG-E1-AY | Renesas Electronics America Inc |
Description: MOSFET N-CH 30V 110A TO263 |
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NP180N04TUJ-E1-AY | Renesas Electronics America Inc |
Description: MOSFET N-CH 40V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V |
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NP180N055TUJ-E1-AY | Renesas Electronics America Inc |
Description: MOSFET N-CH 55V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V |
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NP23N06YDG-E1-AY | Renesas Electronics America Inc |
Description: MOSFET N-CH 60V 23A 8HSON Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 11.5A, 10V Power Dissipation (Max): 1W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-HSON Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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NP33N06YDG-E1-AY | Renesas Electronics America Inc |
Description: MOSFET N-CH 60V 33A 8HSON Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 16.5A, 10V Power Dissipation (Max): 1W (Ta), 97W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-HSON Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NP52N055SUG-E1-AY | Renesas Electronics America Inc |
Description: MOSFET N-CH 55V 52A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 1.2W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
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NP55N055SUG-E1-AY | Renesas Electronics America Inc |
Description: MOSFET N-CH 55V 55A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 28A, 10V Power Dissipation (Max): 1.2W (Ta), 77W (Tc) Supplier Device Package: TO-252 (MP-3ZK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V |
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NP60N04KUG-E1-AY | Renesas Electronics America Inc |
Description: MOSFET N-CH 40V 60A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 30A, 10V Power Dissipation (Max): 1.8W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V |
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NP60N04MUG-S18-AY | Renesas Electronics America Inc |
Description: MOSFET N-CH 40V 60A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Power Dissipation (Max): 1.8W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
товар відсутній |
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|
NP60N055KUG-E1-AY | Renesas Electronics America Inc |
Description: MOSFET N-CH 55V 60A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V Power Dissipation (Max): 1.8W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V |
товар відсутній |
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NP80N04KHE-E1-AY | Renesas Electronics America Inc |
Description: MOSFET N-CH 40V 80A TO263 |
товар відсутній |
| ISL29030AIROZ-EVALZ |
|
Виробник: Renesas Electronics America Inc
Description: BOARD EVAL FOR ISL29030A
Packaging: Box
Sensitivity: 530nm
Voltage - Supply: 2.25V ~ 3.63V
Sensor Type: Proximity, Infrared and Ambient Light
Utilized IC / Part: ISL29030A
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: BOARD EVAL FOR ISL29030A
Packaging: Box
Sensitivity: 530nm
Voltage - Supply: 2.25V ~ 3.63V
Sensor Type: Proximity, Infrared and Ambient Light
Utilized IC / Part: ISL29030A
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
товар відсутній
| ISL85033-12VEVAL3Z |
|
Виробник: Renesas Electronics America Inc
Description: BOARD EVAL FOR ISL85033
Packaging: Box
Voltage - Output: -3.3V ~ -15V
Voltage - Input: 4.5V ~ 28V
Current - Output: 5A
Frequency - Switching: 300kHz ~ 2MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ISL85033
Supplied Contents: Board(s)
Main Purpose: DC/DC, Negative Inverter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: BOARD EVAL FOR ISL85033
Packaging: Box
Voltage - Output: -3.3V ~ -15V
Voltage - Input: 4.5V ~ 28V
Current - Output: 5A
Frequency - Switching: 300kHz ~ 2MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ISL85033
Supplied Contents: Board(s)
Main Purpose: DC/DC, Negative Inverter
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7779.92 грн |
| ISL28217FUZ |
|
Виробник: Renesas Electronics America Inc
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 440µA (x2 Channels)
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 80 pA
Voltage - Input Offset: 4 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 43 mA
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 40 V
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 440µA (x2 Channels)
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 80 pA
Voltage - Input Offset: 4 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 43 mA
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 40 V
на замовлення 3294 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 332.81 грн |
| 10+ | 288.09 грн |
| 25+ | 272.37 грн |
| 100+ | 221.53 грн |
| 250+ | 210.17 грн |
| 500+ | 188.58 грн |
| 1000+ | 176.05 грн |
| ISL28217FUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
товар відсутній
| ISL32613EFHZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DRIVER 1/0 SOT23-6
Description: IC DRIVER 1/0 SOT23-6
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| ISL28217FUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
товар відсутній
| ISL32613EFHZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DRIVER 1/0 SOT23-6
Description: IC DRIVER 1/0 SOT23-6
на замовлення 650 шт:
термін постачання 21-31 дні (днів)| ISL23318UFUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Description: IC DGTL POT 50KOHM 128TAP 10MSOP
товар відсутній
| ISL23318WFRUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGT POT 10KOHM 128TAP 10UTQFN
Description: IC DGT POT 10KOHM 128TAP 10UTQFN
товар відсутній
| ISL23318WFUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
товар відсутній
| ISL23328TFRUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGTL POT 100KOHM 16UTQFN
Description: IC DGTL POT 100KOHM 16UTQFN
на замовлення 250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.91 грн |
| 10+ | 196.17 грн |
| 25+ | 185.44 грн |
| 100+ | 150.82 грн |
| ISL23328UFRUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGT POT 50KOHM 128TAP 16UTQFN
Description: IC DGT POT 50KOHM 128TAP 16UTQFN
товар відсутній
| ISL23328UFVZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGT POT 50KOHM 128TAP 14TSSOP
Description: IC DGT POT 50KOHM 128TAP 14TSSOP
товар відсутній
| ISL23318TFUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGT POT 100KOHM 128TAP 10MSOP
Resistance (Ohms): 100k
Tolerance: ±20%
Features: Selectable Address
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I²C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Part Status: Active
Number of Circuits: 1
Description: IC DGT POT 100KOHM 128TAP 10MSOP
Resistance (Ohms): 100k
Tolerance: ±20%
Features: Selectable Address
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I²C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Part Status: Active
Number of Circuits: 1
товар відсутній
| ISL23318UFUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Description: IC DGTL POT 50KOHM 128TAP 10MSOP
товар відсутній
| ISL23318WFRUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGT POT 10KOHM 128TAP 10UTQFN
Description: IC DGT POT 10KOHM 128TAP 10UTQFN
товар відсутній
| ISL23318WFUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
товар відсутній
| ISL23328TFRUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGTL POT 100KOHM 16UTQFN
Description: IC DGTL POT 100KOHM 16UTQFN
на замовлення 250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 158.34 грн |
| ISL23328UFRUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGT POT 50KOHM 128TAP 16UTQFN
Description: IC DGT POT 50KOHM 128TAP 16UTQFN
товар відсутній
| ISL23328UFVZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGT POT 50KOHM 128TAP 14TSSOP
Description: IC DGT POT 50KOHM 128TAP 14TSSOP
товар відсутній
| ISL23318TFUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGT POT 100KOHM 128TAP 10MSOP
Packaging: Cut Tape (CT)
Resistance (Ohms): 100k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I²C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Part Status: Active
Number of Circuits: 1
Description: IC DGT POT 100KOHM 128TAP 10MSOP
Packaging: Cut Tape (CT)
Resistance (Ohms): 100k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I²C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Part Status: Active
Number of Circuits: 1
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 177.93 грн |
| ISL23418UFUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 50k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 50k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| ISL23418WFUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 175ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 175ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| ISL23418UFUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Packaging: Cut Tape (CT)
Resistance (Ohms): 50k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Packaging: Cut Tape (CT)
Resistance (Ohms): 50k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 34 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 189.46 грн |
| 10+ | 163.71 грн |
| 25+ | 154.41 грн |
| ISL23418WFUZ-T7A |
|
Виробник: Renesas Electronics America Inc
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Packaging: Cut Tape (CT)
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 175ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Packaging: Cut Tape (CT)
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 175ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.61 грн |
| 10+ | 91.91 грн |
| 25+ | 86.71 грн |
| 100+ | 69.33 грн |
| ISL21010CFH333Z-TK |
|
Виробник: Renesas Electronics America Inc
Description: IC VREF SERIES 0.2% SOT23-3
Description: IC VREF SERIES 0.2% SOT23-3
товар відсутній
| ISL23318WFUZ |
|
Виробник: Renesas Electronics America Inc
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
на замовлення 2128 шт:
термін постачання 21-31 дні (днів)| ISL23418WFUZ |
|
Виробник: Renesas Electronics America Inc
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Packaging: Tube
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 175ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Packaging: Tube
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 175ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 161 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.1 грн |
| 10+ | 97.6 грн |
| 25+ | 92.65 грн |
| 100+ | 71.42 грн |
| ISL21010CFH330Z-TK |
|
Виробник: Renesas Electronics America Inc
Description: IC VREF SERIES 0.2% SOT23-3
Description: IC VREF SERIES 0.2% SOT23-3
товар відсутній
| ISL9211BIRU58XZ-T |
|
Виробник: Renesas Electronics America Inc
Description: IC BATT MONITOR LI-ION 8UTDFN
Description: IC BATT MONITOR LI-ION 8UTDFN
товар відсутній
| ISL9021AIRUCZ-T |
|
Виробник: Renesas Electronics America Inc
Description: IC REG LINEAR 1.8V 250MA 6UTDFN
Description: IC REG LINEAR 1.8V 250MA 6UTDFN
товар відсутній
| ISL9021AIRUNZ-T |
|
Виробник: Renesas Electronics America Inc
Description: IC REG LINEAR 3.3V 250MA 6UTDFN
Description: IC REG LINEAR 3.3V 250MA 6UTDFN
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| ISL9021AIRUWZ-T |
|
Виробник: Renesas Electronics America Inc
Description: IC REG LINEAR 1.2V 250MA 6UTDFN
Description: IC REG LINEAR 1.2V 250MA 6UTDFN
товар відсутній
| ISL9021AIRUCZ-T |
|
Виробник: Renesas Electronics America Inc
Description: IC REG LINEAR 1.8V 250MA 6UTDFN
Description: IC REG LINEAR 1.8V 250MA 6UTDFN
на замовлення 840 шт:
термін постачання 21-31 дні (днів)| ISL9021AIRUNZ-T |
|
Виробник: Renesas Electronics America Inc
Description: IC REG LINEAR 3.3V 250MA 6UTDFN
Description: IC REG LINEAR 3.3V 250MA 6UTDFN
на замовлення 3473 шт:
термін постачання 21-31 дні (днів)| ISL9021AIRUWZ-T |
|
Виробник: Renesas Electronics America Inc
Description: IC REG LINEAR 1.2V 250MA 6UTDFN
Description: IC REG LINEAR 1.2V 250MA 6UTDFN
товар відсутній
| RJK0353DPA-01#J0B |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 35A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-WPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V
Description: MOSFET N-CH 30V 35A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-WPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 51.86 грн |
| 5000+ | 48.09 грн |
| RJK0393DPA-00#J5A |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 40A 8WPAK
Description: MOSFET N-CH 30V 40A 8WPAK
товар відсутній
| RJK0652DPB-00#J5 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 60V 35A LFPAK
Description: MOSFET N-CH 60V 35A LFPAK
товар відсутній
| RJK0653DPB-00#J5 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 60V 45A LFPAK
Description: MOSFET N-CH 60V 45A LFPAK
товар відсутній
| RJK0656DPB-00#J5 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 60V 40A LFPAK
Description: MOSFET N-CH 60V 40A LFPAK
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| RJK1056DPB-00#J5 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 100V 25A LFPAK
Description: MOSFET N-CH 100V 25A LFPAK
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 94.13 грн |
| 2SJ649-AZ |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET P-CH 60V 20A TO220
Description: MOSFET P-CH 60V 20A TO220
на замовлення 1475 шт:
термін постачання 21-31 дні (днів)| 2SJ673-AZ |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET P-CH 60V 36A TO220
Description: MOSFET P-CH 60V 36A TO220
товар відсутній
| 2SJ687-ZK-E1-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET P-CH 20V 20A TO252
Description: MOSFET P-CH 20V 20A TO252
товар відсутній
| 2SK3793-AZ |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 100V 12A TO220
Description: MOSFET N-CH 100V 12A TO220
товар відсутній
| 2SK3943-ZP-E1-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 40V 82A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 41A, 10V
Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 10 V
Description: MOSFET N-CH 40V 82A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 41A, 10V
Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 10 V
товар відсутній
| NP100P06PLG-E1-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET P-CH 60V 100A TO263
Description: MOSFET P-CH 60V 100A TO263
товар відсутній
| NP109N055PUJ-E1B-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 55V 110A TO263
Description: MOSFET N-CH 55V 110A TO263
товар відсутній
| NP110N03PUG-E1-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 110A TO263
Description: MOSFET N-CH 30V 110A TO263
товар відсутній
| NP180N04TUJ-E1-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
товар відсутній
| NP180N055TUJ-E1-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
товар відсутній
| NP23N06YDG-E1-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 60V 23A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 11.5A, 10V
Power Dissipation (Max): 1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 60V 23A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 11.5A, 10V
Power Dissipation (Max): 1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 42.12 грн |
| 5000+ | 38.54 грн |
| NP33N06YDG-E1-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 60V 33A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 16.5A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Description: MOSFET N-CH 60V 33A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 16.5A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 58.51 грн |
| NP52N055SUG-E1-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 55V 52A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 55V 52A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
товар відсутній
| NP55N055SUG-E1-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 55V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 28A, 10V
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
Description: MOSFET N-CH 55V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 28A, 10V
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
товар відсутній
| NP60N04KUG-E1-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 40V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Description: MOSFET N-CH 40V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
товар відсутній
| NP60N04MUG-S18-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 40V 60A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 40V 60A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
товар відсутній
| NP60N055KUG-E1-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 55V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Description: MOSFET N-CH 55V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
товар відсутній
| NP80N04KHE-E1-AY |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 40V 80A TO263
Description: MOSFET N-CH 40V 80A TO263
товар відсутній