Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103508) > Сторінка 1721 з 1726
| Фото | Назва | Виробник | Інформація |
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RF201L2SDDTE25 | ROHM SEMICONDUCTOR |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.87V Max. forward impulse current: 20A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBR2L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.52V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.15mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBR3L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBR3L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.56V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.15mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RF101L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.87V Max. forward impulse current: 20A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB050L-60DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.56V Max. forward impulse current: 70A Kind of package: reel; tape Leakage current: 0.1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RRL035P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RSQ035N03FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RSQ035P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SD2351T106W | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323 Type of transistor: NPN Kind of package: reel; tape Case: SC70; SOT323 Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Current gain: 820...2700 Collector-emitter voltage: 50V Frequency: 250MHz Polarisation: bipolar |
на замовлення 2209 шт: термін постачання 14-30 дні (днів) |
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BAS16HYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS16HYT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSS100N03HZGTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8 Drain-source voltage: 30V Pulsed drain current: 40A Case: SOP8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 14nC On-state resistance: 18.9mΩ Power dissipation: 2W Drain current: 10A Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SCT3080ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 134W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SCT3080ARC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 134W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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В кошику од. на суму грн. | |||||||||||||||
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BC858BWT106 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 210...480 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAV99HYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.25W Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAV99HYT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.25W Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 1SS390SMFHT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 35V Load current: 0.1A Semiconductor structure: single diode Case: SC79; SOD523 Max. forward voltage: 1V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DTC143ZMFHAT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ Case: SOT723 Mounting: SMD Kind of transistor: BRT Type of transistor: NPN Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.15W Current gain: 80 Collector-emitter voltage: 50V Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DTA143EMFHAT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ Case: SOT723 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.15W Current gain: 30 Collector-emitter voltage: 50V Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Frequency: 250MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DTC123JMFHAT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Case: SOT723 Mounting: SMD Kind of transistor: BRT Type of transistor: NPN Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.15W Current gain: 80 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MSL0104RGBW1 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; red,blue,green; SMD; 20mA; Lens: white,diffused; Front: flat Mounting: SMD LED colour: blue; green; red LED lens: diffused; white Front: flat Type of diode: LED LED current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RSQ020N03HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IMX8T108 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457 Polarisation: bipolar Case: SC74; SOT457 Type of transistor: NPN x2 Kind of package: reel; tape Mounting: SMD Collector current: 50mA Power dissipation: 0.3W Collector-emitter voltage: 120V Current gain: 180...820 Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IMX1T110 | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457 Mounting: SMD Case: SC74; SOT457 Kind of package: reel; tape Polarisation: bipolar Type of transistor: NPN x2 Collector current: 0.15A Power dissipation: 0.3W Collector-emitter voltage: 50V Current gain: 120...560 Frequency: 180MHz |
на замовлення 2306 шт: термін постачання 14-30 дні (днів) |
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BSS63AT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 0.1A; 200mW; SOT23 Mounting: SMD Frequency: 200MHz Polarisation: bipolar Type of transistor: PNP Case: SOT23 Collector current: 0.1A Power dissipation: 0.2W Current gain: 30 Collector-emitter voltage: 100V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| R6011KNXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP Mounting: THT Gate charge: 22nC Polarisation: unipolar On-state resistance: 720mΩ Case: TO220FP Kind of package: tube Type of transistor: N-MOSFET Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 33A Power dissipation: 53W Drain-source voltage: 600V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| R6011END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252 Mounting: SMD Gate charge: 32nC Polarisation: unipolar On-state resistance: 720mΩ Case: TO252 Kind of package: reel; tape Type of transistor: N-MOSFET Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 22A Power dissipation: 124W Drain-source voltage: 600V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| R6011KND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 124W; TO252 Mounting: SMD Gate charge: 22nC Polarisation: unipolar On-state resistance: 720mΩ Case: TO252 Kind of package: reel; tape Type of transistor: N-MOSFET Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 33A Power dissipation: 124W Drain-source voltage: 600V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| R6015ENXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 30A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.56Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BA3474F-E2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SOP14 Type of integrated circuit: operational amplifier Bandwidth: 4MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...18V DC; 3...36V DC Case: SOP14 Operating temperature: -40...75°C Slew rate: 10V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 75nA Integrated circuit features: high speed |
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В кошику од. на суму грн. | |||||||||||||||
| BA3474FV-E2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 10mV Type of integrated circuit: operational amplifier Bandwidth: 4MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...18V DC; 3...36V DC Case: SSOP-B14 Operating temperature: -40...85°C Slew rate: 10V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 75nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KDZVTR5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CDZVT2R5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 100mW; 5.1V; SMD; reel,tape; SOD923; single diode Type of diode: Zener Power dissipation: 0.1W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD923 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RB751VM-40TE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 30mA; reel,tape Type of diode: Schottky rectifying Case: SOD323F Mounting: SMD Max. off-state voltage: 30V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Leakage current: 0.5µA Max. forward impulse current: 0.2A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB751V-40TE17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 30mA; reel,tape Type of diode: Schottky rectifying Case: SOD323F Mounting: SMD Max. off-state voltage: 30V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB751VM-40FHTE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 30mA; reel,tape Type of diode: Schottky rectifying Case: SOD323F Mounting: SMD Max. off-state voltage: 30V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Leakage current: 0.5µA Max. forward impulse current: 0.2A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DAN202KT146 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC59,SOT346; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: SC59; SOT346 Max. forward voltage: 1.2V Max. load current: 0.3A Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 5980 шт: термін постачання 14-30 дні (днів) |
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| DAN202UMFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: SOT323F Max. forward voltage: 1.2V Max. load current: 0.3A Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DAN202UMTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: SOT323F Max. forward voltage: 1.2V Max. load current: 0.3A Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RK7002BMT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 200/350mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 200/350mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 593 шт: термін постачання 14-30 дні (днів) |
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| BU4925F-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Manufacturer series: BU49 Kind of package: reel; tape Kind of RESET output: CMOS Mounting: SMD Active logical level: low Kind of integrated circuit: voltage detector Case: SOP4 Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 2.5V Integrated circuit features: ±1% accuracy |
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В кошику од. на суму грн. | |||||||||||||||
| BU4925FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Manufacturer series: BU49 Kind of package: reel; tape Kind of RESET output: CMOS Mounting: SMD Active logical level: low Kind of integrated circuit: voltage detector Case: VSOP5 Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 2.5V Integrated circuit features: ±1% accuracy |
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| BU4925G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Manufacturer series: BU49 Kind of package: reel; tape Kind of RESET output: CMOS Mounting: SMD Active logical level: low Kind of integrated circuit: voltage detector Case: SSOP5 Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 2.5V Integrated circuit features: ±1% accuracy |
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В кошику од. на суму грн. | |||||||||||||||
 |
RB161QS-40T18R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD882; SMD; 40V; 1A; reel,tape Mounting: SMD Leakage current: 0.1mA Max. forward voltage: 0.6V Load current: 1A Max. load current: 3A Max. forward impulse current: 7A Max. off-state voltage: 40V Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SOD882 |
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В кошику од. на суму грн. | ||||||||||||||
|
|
UMZ18NT106 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 18V; SMD; reel,tape; SC70,SOT323 Mounting: SMD Case: SC70; SOT323 Kind of package: reel; tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 18V Semiconductor structure: common anode; double |
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В кошику од. на суму грн. | ||||||||||||||
| BA6285FS-E2 | ROHM SEMICONDUCTOR |
Category: Motor and PWM drivers Description: IC: driver; motor controller; SSOP16; 1A; Ch: 2; 4.5÷15VDC Type of integrated circuit: driver Kind of integrated circuit: motor controller Case: SSOP16 Output current: 1A Number of channels: 2 Mounting: SMT Operating temperature: -20...75°C Operating voltage: 4.5...15V DC Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
| BA6287F-E2 | ROHM SEMICONDUCTOR |
Category: Motor and PWM drivers Description: IC: driver; motor controller; SOP8; 1A; Ch: 2; 4.5÷15VDC Type of integrated circuit: driver Kind of integrated circuit: motor controller Case: SOP8 Output current: 1A Number of channels: 2 Mounting: SMT Operating temperature: -20...75°C Application: universal Operating voltage: 4.5...15V DC Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
| PDZVTFTR27B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD128; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Mounting: SMD Kind of package: reel; tape Case: SOD128 Semiconductor structure: single diode |
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В кошику од. на суму грн. | |||||||||||||||
| RD3L07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Pulsed drain current: -140A Drain current: -70A Drain-source voltage: -60V Gate charge: 105nC On-state resistance: 14.1mΩ Gate-source voltage: ±20V Power dissipation: 101W |
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В кошику од. на суму грн. | |||||||||||||||
| RD3G07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Pulsed drain current: -140A Drain current: -70A Drain-source voltage: -40V Gate charge: 105nC On-state resistance: 8.7mΩ Gate-source voltage: ±20V Power dissipation: 101W |
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В кошику од. на суму грн. | |||||||||||||||
| RD3L01BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Pulsed drain current: -20A Drain current: -10A Drain-source voltage: -60V Gate charge: 15.2nC On-state resistance: 93mΩ Gate-source voltage: ±20V Power dissipation: 26W |
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В кошику од. на суму грн. | |||||||||||||||
| RD3L03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Pulsed drain current: -70A Drain current: -35A Drain-source voltage: -60V Gate charge: 37nC On-state resistance: 46mΩ Gate-source voltage: ±20V Power dissipation: 56W |
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В кошику од. на суму грн. | |||||||||||||||
| RD3G01BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Pulsed drain current: -30A Drain current: -15A Drain-source voltage: -40V Gate charge: 19.3nC On-state resistance: 49mΩ Gate-source voltage: ±20V Power dissipation: 25W |
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В кошику од. на суму грн. | |||||||||||||||
| RD3G03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Pulsed drain current: -70A Drain current: -35A Drain-source voltage: -40V Gate charge: 38nC On-state resistance: 24mΩ Gate-source voltage: ±20V Power dissipation: 56W |
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В кошику од. на суму грн. | |||||||||||||||
 |
SML-H12P8TT86C | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW Type of diode: LED LED colour: green Mounting: SMD Case - inch: 0805 Case - mm: 2012 Luminosity: 2.5...4mcd Operating voltage: 2.2V DC Dimensions: 2x1.25x0.8mm LED current: 20mA Wavelength: 557...563nm LED lens: transparent Power: 54mW Front: flat |
на замовлення 2596 шт: термін постачання 14-30 дні (днів) |
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| SML-H12Y8TT86C | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; yellow; SMD; 0805; 63mcd; 20mA; 590nm; Lens: transparent Type of diode: LED LED colour: yellow Mounting: SMD Case - inch: 0805 Case - mm: 2012 Luminosity: 63mcd LED current: 20mA Wavelength: 590nm LED lens: transparent Front: flat |
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В кошику од. на суму грн. | |||||||||||||||
| BA4580YF-MGE2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 10MHz; Ch: 2; ±2÷16VDC,4÷32VDC; SOP8 Type of integrated circuit: operational amplifier Bandwidth: 10MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 2...16V DC; 4...32V DC Case: SOP8 Operating temperature: -40...105°C Slew rate: 5V/μs Integrated circuit features: low noise Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 200nA |
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| BA4580YFVM-MGTR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 10MHz; Ch: 2; ±2÷16VDC,4÷32VDC; MSOP8 Type of integrated circuit: operational amplifier Bandwidth: 10MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 2...16V DC; 4...32V DC Case: MSOP8 Operating temperature: -40...105°C Slew rate: 5V/μs Integrated circuit features: low noise Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 200nA |
товару немає в наявності |
В кошику од. на суму грн. |
| RF201L2SDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
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В кошику
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| RBR2L60BDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
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В кошику
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| RBR3L40ADDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
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| RBR3L60BDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
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В кошику
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| RF101L2SDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
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В кошику
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| RB050L-60DDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 0.1mA
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В кошику
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| RRL035P03FRATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
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| RSQ035N03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RSQ035P03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| 2SD2351T106W |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Current gain: 820...2700
Collector-emitter voltage: 50V
Frequency: 250MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Current gain: 820...2700
Collector-emitter voltage: 50V
Frequency: 250MHz
Polarisation: bipolar
на замовлення 2209 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.73 грн |
| 19+ | 23.19 грн |
| 50+ | 15.58 грн |
| 100+ | 13.04 грн |
| 500+ | 9.06 грн |
| 1000+ | 8.04 грн |
| BAS16HYFHT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
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| BAS16HYT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
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| RSS100N03HZGTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Drain-source voltage: 30V
Pulsed drain current: 40A
Case: SOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 18.9mΩ
Power dissipation: 2W
Drain current: 10A
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Drain-source voltage: 30V
Pulsed drain current: 40A
Case: SOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 18.9mΩ
Power dissipation: 2W
Drain current: 10A
Gate-source voltage: ±20V
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| SCT3080ALGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
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| SCT3080ARC14 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| BC858BWT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| BAV99HYFHT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
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| BAV99HYT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
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| 1SS390SMFHT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 1V
Kind of package: reel; tape
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| DTC143ZMFHAT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Case: SOT723
Mounting: SMD
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Case: SOT723
Mounting: SMD
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
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| DTA143EMFHAT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Case: SOT723
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 250MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Case: SOT723
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 250MHz
Polarisation: bipolar
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| DTC123JMFHAT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Case: SOT723
Mounting: SMD
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Case: SOT723
Mounting: SMD
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
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| MSL0104RGBW1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red,blue,green; SMD; 20mA; Lens: white,diffused; Front: flat
Mounting: SMD
LED colour: blue; green; red
LED lens: diffused; white
Front: flat
Type of diode: LED
LED current: 20mA
Category: SMD colour LEDs
Description: LED; red,blue,green; SMD; 20mA; Lens: white,diffused; Front: flat
Mounting: SMD
LED colour: blue; green; red
LED lens: diffused; white
Front: flat
Type of diode: LED
LED current: 20mA
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| RSQ020N03HZGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IMX8T108 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457
Polarisation: bipolar
Case: SC74; SOT457
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 180...820
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457
Polarisation: bipolar
Case: SC74; SOT457
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 180...820
Frequency: 140MHz
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| IMX1T110 | |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Mounting: SMD
Case: SC74; SOT457
Kind of package: reel; tape
Polarisation: bipolar
Type of transistor: NPN x2
Collector current: 0.15A
Power dissipation: 0.3W
Collector-emitter voltage: 50V
Current gain: 120...560
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Mounting: SMD
Case: SC74; SOT457
Kind of package: reel; tape
Polarisation: bipolar
Type of transistor: NPN x2
Collector current: 0.15A
Power dissipation: 0.3W
Collector-emitter voltage: 50V
Current gain: 120...560
Frequency: 180MHz
на замовлення 2306 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 18.23 грн |
| 35+ | 12.11 грн |
| 100+ | 7.82 грн |
| 250+ | 6.85 грн |
| 500+ | 6.32 грн |
| 1000+ | 5.83 грн |
| BSS63AT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 200mW; SOT23
Mounting: SMD
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 30
Collector-emitter voltage: 100V
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 200mW; SOT23
Mounting: SMD
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 30
Collector-emitter voltage: 100V
Kind of package: reel; tape
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| R6011KNXC7G |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP
Mounting: THT
Gate charge: 22nC
Polarisation: unipolar
On-state resistance: 720mΩ
Case: TO220FP
Kind of package: tube
Type of transistor: N-MOSFET
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 33A
Power dissipation: 53W
Drain-source voltage: 600V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP
Mounting: THT
Gate charge: 22nC
Polarisation: unipolar
On-state resistance: 720mΩ
Case: TO220FP
Kind of package: tube
Type of transistor: N-MOSFET
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 33A
Power dissipation: 53W
Drain-source voltage: 600V
Kind of channel: enhancement
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| R6011END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252
Mounting: SMD
Gate charge: 32nC
Polarisation: unipolar
On-state resistance: 720mΩ
Case: TO252
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 22A
Power dissipation: 124W
Drain-source voltage: 600V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252
Mounting: SMD
Gate charge: 32nC
Polarisation: unipolar
On-state resistance: 720mΩ
Case: TO252
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 22A
Power dissipation: 124W
Drain-source voltage: 600V
Kind of channel: enhancement
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| R6011KND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 124W; TO252
Mounting: SMD
Gate charge: 22nC
Polarisation: unipolar
On-state resistance: 720mΩ
Case: TO252
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 33A
Power dissipation: 124W
Drain-source voltage: 600V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 124W; TO252
Mounting: SMD
Gate charge: 22nC
Polarisation: unipolar
On-state resistance: 720mΩ
Case: TO252
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 33A
Power dissipation: 124W
Drain-source voltage: 600V
Kind of channel: enhancement
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| R6015ENXC7G |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 30A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 30A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
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| BA3474F-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SOP14
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: SOP14
Operating temperature: -40...75°C
Slew rate: 10V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 75nA
Integrated circuit features: high speed
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SOP14
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: SOP14
Operating temperature: -40...75°C
Slew rate: 10V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 75nA
Integrated circuit features: high speed
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| BA3474FV-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: SSOP-B14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 75nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: SSOP-B14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 75nA
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| KDZVTR5.1B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
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| CDZVT2R5.1B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 5.1V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 5.1V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
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| RB751VM-40TE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
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| RB751V-40TE17 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
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| RB751VM-40FHTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
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| DAN202KT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 5980 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.79 грн |
| 33+ | 13.21 грн |
| 39+ | 11.13 грн |
| 100+ | 7.48 грн |
| 500+ | 5.26 грн |
| 1000+ | 4.58 грн |
| 3000+ | 3.77 грн |
| DAN202UMFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
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| DAN202UMTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
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| RK7002BMT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 200/350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 200/350mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 200/350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 200/350mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 593 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 10.03 грн |
| 73+ | 5.84 грн |
| 104+ | 4.10 грн |
| 120+ | 3.55 грн |
| 500+ | 2.62 грн |
| BU4925F-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Kind of integrated circuit: voltage detector
Case: SOP4
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Kind of integrated circuit: voltage detector
Case: SOP4
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
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| BU4925FVE-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Kind of integrated circuit: voltage detector
Case: VSOP5
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Kind of integrated circuit: voltage detector
Case: VSOP5
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
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| BU4925G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Kind of integrated circuit: voltage detector
Case: SSOP5
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Kind of integrated circuit: voltage detector
Case: SSOP5
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
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| RB161QS-40T18R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD882; SMD; 40V; 1A; reel,tape
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.6V
Load current: 1A
Max. load current: 3A
Max. forward impulse current: 7A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD882
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD882; SMD; 40V; 1A; reel,tape
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.6V
Load current: 1A
Max. load current: 3A
Max. forward impulse current: 7A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD882
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| UMZ18NT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; reel,tape; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; reel,tape; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Semiconductor structure: common anode; double
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| BA6285FS-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 1A; Ch: 2; 4.5÷15VDC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: SSOP16
Output current: 1A
Number of channels: 2
Mounting: SMT
Operating temperature: -20...75°C
Operating voltage: 4.5...15V DC
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 1A; Ch: 2; 4.5÷15VDC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: SSOP16
Output current: 1A
Number of channels: 2
Mounting: SMT
Operating temperature: -20...75°C
Operating voltage: 4.5...15V DC
Kind of package: reel; tape
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| BA6287F-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SOP8; 1A; Ch: 2; 4.5÷15VDC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: SOP8
Output current: 1A
Number of channels: 2
Mounting: SMT
Operating temperature: -20...75°C
Application: universal
Operating voltage: 4.5...15V DC
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SOP8; 1A; Ch: 2; 4.5÷15VDC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: SOP8
Output current: 1A
Number of channels: 2
Mounting: SMT
Operating temperature: -20...75°C
Application: universal
Operating voltage: 4.5...15V DC
Kind of package: reel; tape
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| PDZVTFTR27B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD128; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD128; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
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| RD3L07BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -140A
Drain current: -70A
Drain-source voltage: -60V
Gate charge: 105nC
On-state resistance: 14.1mΩ
Gate-source voltage: ±20V
Power dissipation: 101W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -140A
Drain current: -70A
Drain-source voltage: -60V
Gate charge: 105nC
On-state resistance: 14.1mΩ
Gate-source voltage: ±20V
Power dissipation: 101W
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| RD3G07BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -140A
Drain current: -70A
Drain-source voltage: -40V
Gate charge: 105nC
On-state resistance: 8.7mΩ
Gate-source voltage: ±20V
Power dissipation: 101W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -140A
Drain current: -70A
Drain-source voltage: -40V
Gate charge: 105nC
On-state resistance: 8.7mΩ
Gate-source voltage: ±20V
Power dissipation: 101W
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| RD3L01BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -20A
Drain current: -10A
Drain-source voltage: -60V
Gate charge: 15.2nC
On-state resistance: 93mΩ
Gate-source voltage: ±20V
Power dissipation: 26W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -20A
Drain current: -10A
Drain-source voltage: -60V
Gate charge: 15.2nC
On-state resistance: 93mΩ
Gate-source voltage: ±20V
Power dissipation: 26W
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| RD3L03BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -70A
Drain current: -35A
Drain-source voltage: -60V
Gate charge: 37nC
On-state resistance: 46mΩ
Gate-source voltage: ±20V
Power dissipation: 56W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -70A
Drain current: -35A
Drain-source voltage: -60V
Gate charge: 37nC
On-state resistance: 46mΩ
Gate-source voltage: ±20V
Power dissipation: 56W
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| RD3G01BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -30A
Drain current: -15A
Drain-source voltage: -40V
Gate charge: 19.3nC
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Power dissipation: 25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -30A
Drain current: -15A
Drain-source voltage: -40V
Gate charge: 19.3nC
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Power dissipation: 25W
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| RD3G03BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -70A
Drain current: -35A
Drain-source voltage: -40V
Gate charge: 38nC
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Power dissipation: 56W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -70A
Drain current: -35A
Drain-source voltage: -40V
Gate charge: 38nC
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Power dissipation: 56W
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| SML-H12P8TT86C |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Luminosity: 2.5...4mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
Category: SMD colour LEDs
Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Luminosity: 2.5...4mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
на замовлення 2596 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 20.06 грн |
| 32+ | 13.37 грн |
| 38+ | 11.34 грн |
| 100+ | 8.97 грн |
| 500+ | 7.03 грн |
| 1000+ | 6.52 грн |
| SML-H12Y8TT86C |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0805; 63mcd; 20mA; 590nm; Lens: transparent
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Luminosity: 63mcd
LED current: 20mA
Wavelength: 590nm
LED lens: transparent
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0805; 63mcd; 20mA; 590nm; Lens: transparent
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Luminosity: 63mcd
LED current: 20mA
Wavelength: 590nm
LED lens: transparent
Front: flat
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| BA4580YF-MGE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; ±2÷16VDC,4÷32VDC; SOP8
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 2...16V DC; 4...32V DC
Case: SOP8
Operating temperature: -40...105°C
Slew rate: 5V/μs
Integrated circuit features: low noise
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; ±2÷16VDC,4÷32VDC; SOP8
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 2...16V DC; 4...32V DC
Case: SOP8
Operating temperature: -40...105°C
Slew rate: 5V/μs
Integrated circuit features: low noise
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 200nA
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| BA4580YFVM-MGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; ±2÷16VDC,4÷32VDC; MSOP8
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 2...16V DC; 4...32V DC
Case: MSOP8
Operating temperature: -40...105°C
Slew rate: 5V/μs
Integrated circuit features: low noise
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; ±2÷16VDC,4÷32VDC; MSOP8
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 2...16V DC; 4...32V DC
Case: MSOP8
Operating temperature: -40...105°C
Slew rate: 5V/μs
Integrated circuit features: low noise
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 200nA
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