Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103507) > Сторінка 952 з 1726
| Фото | Назва | Виробник | Інформація |
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SFR01MZPJ245 | Rohm Semiconductor |
Description: RES SMD 2.4M OHM 5% 1/16W 0402Power (Watts): 0.063W, 1/16W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Part Status: Active Resistance: 2.4 MOhms |
товару немає в наявності |
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SFR01MZPJ245 | Rohm Semiconductor |
Description: RES SMD 2.4M OHM 5% 1/16W 0402Power (Watts): 0.063W, 1/16W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Part Status: Active Resistance: 2.4 MOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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R6004RND3TL1 | Rohm Semiconductor |
Description: 600V 4A TO-252, PRESTOMOS WITH IPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.73Ohm @ 2A, 15V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 7V @ 450µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6004RND3TL1 | Rohm Semiconductor |
Description: 600V 4A TO-252, PRESTOMOS WITH IPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.73Ohm @ 2A, 15V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 7V @ 450µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 100 V |
на замовлення 2135 шт: термін постачання 21-31 дні (днів) |
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R6007RND3TL1 | Rohm Semiconductor |
Description: 600V 7A TO-252, PRESTOMOS WITH IPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 7V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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R6007RND3TL1 | Rohm Semiconductor |
Description: 600V 7A TO-252, PRESTOMOS WITH IPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 7V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V |
на замовлення 3012 шт: термін постачання 21-31 дні (днів) |
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RSX058BM2STL | Rohm Semiconductor |
Description: 200V 3A, TO-252, ULTRA LOW IRSBDCurrent - Reverse Leakage @ Vr: 200 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-252 Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RSX058BM2STL | Rohm Semiconductor |
Description: 200V 3A, TO-252, ULTRA LOW IRSBDVoltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-252 Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 200 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLR2376YFVM-CTR | Rohm Semiconductor |
Description: TLR SERIES, AUTOMOTIVE HIGH PRECOperating Temperature: -40°C ~ 125°C Amplifier Type: CMOS Mounting Type: Surface Mount Output Type: Push-Pull, Rail-to-Rail Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Tape & Reel (TR) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 50 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-MSOP Voltage - Input Offset: 1.7 µV Current - Input Bias: 0.5 pA Gain Bandwidth Product: 4 MHz Slew Rate: 2V/µs Current - Supply: 1.245mA Qualification: AEC-Q100 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLR2376YFVM-CTR | Rohm Semiconductor |
Description: TLR SERIES, AUTOMOTIVE HIGH PRECCurrent - Supply: 1.245mA Operating Temperature: -40°C ~ 125°C Amplifier Type: CMOS Mounting Type: Surface Mount Output Type: Push-Pull, Rail-to-Rail Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 50 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-MSOP Voltage - Input Offset: 1.7 µV Current - Input Bias: 0.5 pA Gain Bandwidth Product: 4 MHz Slew Rate: 2V/µs Qualification: AEC-Q100 Grade: Automotive |
на замовлення 5026 шт: термін постачання 21-31 дні (днів) |
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TLR2376YFJ-CE2 | Rohm Semiconductor |
Description: TLR SERIES, AUTOMOTIVE HIGH PRECVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 50 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-SOP-J Voltage - Input Offset: 1.7 µV Current - Input Bias: 0.5 pA Gain Bandwidth Product: 4 MHz Slew Rate: 2V/µs Current - Supply: 1.245mA Operating Temperature: -40°C ~ 125°C Amplifier Type: CMOS Mounting Type: Surface Mount Output Type: Push-Pull, Rail-to-Rail Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLR2376YFJ-CE2 | Rohm Semiconductor |
Description: TLR SERIES, AUTOMOTIVE HIGH PRECGain Bandwidth Product: 4 MHz Slew Rate: 2V/µs Current - Supply: 1.245mA Operating Temperature: -40°C ~ 125°C Amplifier Type: CMOS Mounting Type: Surface Mount Output Type: Push-Pull, Rail-to-Rail Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 50 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-SOP-J Voltage - Input Offset: 1.7 µV Current - Input Bias: 0.5 pA Qualification: AEC-Q100 Grade: Automotive |
на замовлення 2363 шт: термін постачання 21-31 дні (днів) |
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TLR2377YFJ-CE2 | Rohm Semiconductor |
Description: TLR SERIES, AUTOMOTIVE HIGH PRECQualification: AEC-Q100 Grade: Automotive Operating Temperature: -40°C ~ 125°C Amplifier Type: CMOS Mounting Type: Surface Mount Output Type: Push-Pull, Rail-to-Rail Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 50 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-SOP-J Voltage - Input Offset: 1.7 mV Current - Input Bias: 0.5 pA Gain Bandwidth Product: 4 MHz Slew Rate: 2V/µs Current - Supply: 1.245mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLR2377YFJ-CE2 | Rohm Semiconductor |
Description: TLR SERIES, AUTOMOTIVE HIGH PRECVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 50 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-SOP-J Voltage - Input Offset: 1.7 mV Current - Input Bias: 0.5 pA Gain Bandwidth Product: 4 MHz Slew Rate: 2V/µs Current - Supply: 1.245mA Qualification: AEC-Q100 Grade: Automotive Mounting Type: Surface Mount Output Type: Push-Pull, Rail-to-Rail Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Operating Temperature: -40°C ~ 125°C Amplifier Type: CMOS |
на замовлення 2481 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPF1103 | Rohm Semiconductor |
Description: RES 110K OHM 1% 1/16W 0402Resistance: 110 kOhms Part Status: Active Height - Seated (Max): 0.016" (0.40mm) Supplier Device Package: 0402 Number of Terminations: 2 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0402 (1005 Metric) Features: Anti-Sulfur Tolerance: ±1% Power (Watts): 0.063W, 1/16W Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EMP11FHT2R | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING, 80V, 100MA Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: EMD6 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EMP11FHT2R | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING, 80V, 100MA Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: EMD6 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LPM-5763MU301 | Rohm Semiconductor |
Description: LED DOT MTRX 24X24 RD, GRN, ORN Packaging: Bulk Color: Green, Red, Orange Size / Dimension: 3.78" L x 3.78" W x 0.51" H (96.00mm x 96.00mm x 13.00mm) Configuration: 24 x 24 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM358FVT-GE2 | Rohm Semiconductor |
Description: GROUND SENSE OPERATIONAL AMPLIFISupplier Device Package: 8-TSSOP-B Voltage - Input Offset: 1 mV Current - Input Bias: 20 nA Gain Bandwidth Product: 800 kHz Slew Rate: 0.3V/µs Current - Supply: 600µA Operating Temperature: -40°C ~ 85°C Amplifier Type: Standard (General Purpose) Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Voltage - Supply Span (Max): 32 V Voltage - Supply Span (Min): 3 V Current - Output / Channel: 30 mA Number of Circuits: 2 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM358FVT-GE2 | Rohm Semiconductor |
Description: GROUND SENSE OPERATIONAL AMPLIFICurrent - Output / Channel: 30 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-TSSOP-B Voltage - Input Offset: 1 mV Current - Input Bias: 20 nA Gain Bandwidth Product: 800 kHz Slew Rate: 0.3V/µs Current - Supply: 600µA Operating Temperature: -40°C ~ 85°C Amplifier Type: Standard (General Purpose) Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 32 V Voltage - Supply Span (Min): 3 V |
на замовлення 5779 шт: термін постачання 21-31 дні (днів) |
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BD8205EFV-ME2 | Rohm Semiconductor |
Description: IC MOTOR DRVR 4.3V-10V 24HTSSOPPackaging: Tape & Reel (TR) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Interface: Parallel Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (5) Voltage - Supply: 4.3V ~ 10V Applications: Media Player Voltage - Load: 4.3V ~ 10V Supplier Device Package: 24-HTSSOP-B Motor Type - AC, DC: Brushed DC Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD7931F-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 4.5V-14V 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 500mA Interface: On/Off Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 14V Applications: Media Player Technology: Power MOSFET Voltage - Load: 4.5V ~ 14V Supplier Device Package: 8-SOP Motor Type - AC, DC: Brushed DC Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RQ3E160ADTB1 | Rohm Semiconductor |
Description: NCH 30V 16A MIDDLE POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-HSMT (3.2x3) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RQ3E160ADTB1 | Rohm Semiconductor |
Description: NCH 30V 16A MIDDLE POWER MOSFETTechnology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-HSMT (3.2x3) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) FET Type: N-Channel |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RRQ020P03TCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2A TSMT6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RRQ020P03TCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
на замовлення 2928 шт: термін постачання 21-31 дні (днів) |
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ESR25JZPF4R70 | Rohm Semiconductor |
Description: RES SMD 4.7 OHM 1% 2/3W 1210Power (Watts): 0.667W, 2/3W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 1210 (3225 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1210 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 4.7 Ohms |
на замовлення 3985 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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ESR25JZPF4R70 | Rohm Semiconductor |
Description: RES SMD 4.7 OHM 1% 2/3W 1210Power (Watts): 0.667W, 2/3W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 1210 (3225 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1210 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 4.7 Ohms |
на замовлення 3985 шт: термін постачання 21-31 дні (днів) |
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ESR25JZPF6R20 | Rohm Semiconductor |
Description: RES SMD 6.2 OHM 1% 2/3W 1210Tolerance: ±1% Power (Watts): 0.667W, 2/3W Packaging: Tape & Reel (TR) Resistance: 6.2 Ohms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 1210 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Temperature Coefficient: ±100ppm/°C Package / Case: 1210 (3225 Metric) Features: Automotive AEC-Q200, Pulse Withstanding |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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ESR25JZPF6R20 | Rohm Semiconductor |
Description: RES SMD 6.2 OHM 1% 2/3W 1210Resistance: 6.2 Ohms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 1210 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Temperature Coefficient: ±100ppm/°C Package / Case: 1210 (3225 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±1% Power (Watts): 0.667W, 2/3W Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RSS095N05HZGTB | Rohm Semiconductor |
Description: NCH 45V 9.5A POWER MOSFET: RSS09Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V Qualification: AEC-Q101 |
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RSS095N05HZGTB | Rohm Semiconductor |
Description: NCH 45V 9.5A POWER MOSFET: RSS09Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 2250 шт: термін постачання 21-31 дні (днів) |
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KTR10EZPF1500 | Rohm Semiconductor |
Description: RES SMD 150 OHM 1% 1/8W 0805Power (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Automotive AEC-Q200, High Voltage Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 150 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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KTR10EZPF1500 | Rohm Semiconductor |
Description: RES SMD 150 OHM 1% 1/8W 0805Power (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Automotive AEC-Q200, High Voltage Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 150 Ohms |
на замовлення 5865 шт: термін постачання 21-31 дні (днів) |
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ESR18EZPF2210 | Rohm Semiconductor |
Description: RES 221 OHM 1% 3/4W 1206Resistance: 221 Ohms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 1206 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Temperature Coefficient: ±100ppm/°C Package / Case: 1206 (3216 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±1% Power (Watts): 0.75W, 3/4W Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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ESR18EZPF2210 | Rohm Semiconductor |
Description: RES 221 OHM 1% 3/4W 1206Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Temperature Coefficient: ±100ppm/°C Package / Case: 1206 (3216 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±1% Power (Watts): 0.75W, 3/4W Packaging: Cut Tape (CT) Resistance: 221 Ohms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 1206 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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LTR50UZPFLR150 | Rohm Semiconductor |
Description: HIGH POWER LOW OHMIC CHIP RESISTPower (Watts): 2W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Tape & Reel (TR) Package / Case: Wide 2010 (5025 Metric), 1020 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1020 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 150 mOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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LTR50UZPFLR150 | Rohm Semiconductor |
Description: HIGH POWER LOW OHMIC CHIP RESISTResistance: 150 mOhms Part Status: Active Height - Seated (Max): 0.029" (0.73mm) Supplier Device Package: 1020 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm) Temperature Coefficient: ±100ppm/°C Package / Case: Wide 2010 (5025 Metric), 1020 Features: Automotive AEC-Q200, Current Sense Tolerance: ±1% Power (Watts): 2W Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DTC114EUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FPackaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: UMT3F Part Status: Not For New Designs Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| ML610Q174-447GAZWAAL | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 80QFPDigiKey Programmable: Not Verified Number of I/O: 49 Part Status: Last Time Buy Supplier Device Package: 80-QFP (14x20) Peripherals: LCD, POR, PWM, WDT Connectivity: I²C, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 12x10b Core Processor: nX-U8/100 EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 4K x 8 Program Memory Size: 128KB (64K x 16) Speed: 8.4MHz Mounting Type: Surface Mount Package / Case: 80-BQFP Packaging: Bulk |
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В кошику од. на суму грн. | |||||||||||||||||
| BD733L2FP-C-EVK | Rohm Semiconductor |
Description: LDO_EVK_BD7XXL2X BD733L2FP-C Packaging: Bulk Voltage - Output: 3.3V Voltage - Input: 4.37V ~ 45V Current - Output: 200mA Regulator Type: Positive Fixed Board Type: Fully Populated Utilized IC / Part: BD733L2-C Supplied Contents: Board(s) Channels per IC: 1 - Single Part Status: Active |
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SMLP14ECNWT86 | Rohm Semiconductor |
Description: LED GREEN DIFFUSED 0402 SMDPackage / Case: 0402 (1005 Metric) Packaging: Tape & Reel (TR) Lens Size: 1.00mm x 0.60mm Lens Style: Rectangle with Flat Top Part Status: Active Lens Transparency: Diffused Supplier Device Package: 0402 Wavelength - Dominant: 527nm Height (Max): 0.25mm Current - Test: 5mA Lens Color: White Voltage - Forward (Vf) (Typ): 3V Millicandela Rating: 110mcd Mounting Type: Surface Mount Size / Dimension: 1.00mm L x 0.60mm W Color: Green |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMLP14ECNWT86 | Rohm Semiconductor |
Description: LED GREEN DIFFUSED 0402 SMDLens Size: 1.00mm x 0.60mm Lens Style: Rectangle with Flat Top Part Status: Active Lens Transparency: Diffused Supplier Device Package: 0402 Wavelength - Dominant: 527nm Height (Max): 0.25mm Current - Test: 5mA Lens Color: White Voltage - Forward (Vf) (Typ): 3V Millicandela Rating: 110mcd Mounting Type: Surface Mount Size / Dimension: 1.00mm L x 0.60mm W Color: Green Package / Case: 0402 (1005 Metric) Packaging: Cut Tape (CT) |
на замовлення 4610 шт: термін постачання 21-31 дні (днів) |
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RRH100P03GZETB | Rohm Semiconductor |
Description: MOSFET P-CH 30V 10A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Not For New Designs Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RRH140P03GZETB | Rohm Semiconductor |
Description: MOSFET P-CH 30V 14A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Not For New Designs Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SDR10EZPF3R30 | Rohm Semiconductor |
Description: RES 3.3 OHM 1% 1/2W 0805Resistance: 3.3 Ohms Power (Watts): 0.5W, 1/2W Packaging: Tape & Reel (TR) Tolerance: ±1% Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0805 (2012 Metric) Features: Automotive AEC-Q200, Pulse Withstanding |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SDR10EZPF3R30 | Rohm Semiconductor |
Description: RES 3.3 OHM 1% 1/2W 0805Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0805 (2012 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±1% Power (Watts): 0.5W, 1/2W Packaging: Cut Tape (CT) Resistance: 3.3 Ohms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 |
на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPJ3R3 | Rohm Semiconductor |
Description: RES 3.3 OHM 5% 1/2W 0805Resistance: 3.3 Ohms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±200ppm/°C Package / Case: 0805 (2012 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±5% Power (Watts): 0.5W, 1/2W Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SDR10EZPJ3R3 | Rohm Semiconductor |
Description: RES 3.3 OHM 5% 1/2W 0805Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±200ppm/°C Package / Case: 0805 (2012 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±5% Power (Watts): 0.5W, 1/2W Packaging: Cut Tape (CT) Resistance: 3.3 Ohms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 |
на замовлення 4600 шт: термін постачання 21-31 дні (днів) |
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BA178M24CP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 24V 500MA TO220-3Voltage Dropout (Max): 2V @ 500mA (Typ) PSRR: 55dB (120Hz) Part Status: Active Voltage - Output (Min/Fixed): 24V Supplier Device Package: TO-220-3 Number of Regulators: 1 Voltage - Input (Max): 33V Current - Quiescent (Iq): 4.5 mA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 500mA Mounting Type: Through Hole Output Type: Fixed Package / Case: TO-220-3 Cropped Leads Packaging: Tape & Reel (TR) Current - Supply (Max): 6 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BA178M24CP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 24V 500MA TO220-3Packaging: Cut Tape (CT) Package / Case: TO-220-3 Cropped Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 4.5 mA Voltage - Input (Max): 33V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 24V Part Status: Active PSRR: 55dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Current - Supply (Max): 6 mA |
на замовлення 462 шт: термін постачання 21-31 дні (днів) |
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DTC124EMFHAT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1=R2 POTENTIAL DIResistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: VMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTC124EMFHAT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1=R2 POTENTIAL DIResistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: VMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA115EMFHAT2L | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A VMT3Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: VMT3 Grade: Automotive Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA115EMFHAT2L | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A VMT3Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: VMT3 Grade: Automotive Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
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В кошику од. на суму грн. | ||||||||||||||||
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DTA124XMFHAT2L | Rohm Semiconductor |
Description: DIGITAL TRANSISTOR PNP 50V 100MAPower - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: VMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased |
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В кошику од. на суму грн. | ||||||||||||||||
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DTA124XMFHAT2L | Rohm Semiconductor |
Description: DIGITAL TRANSISTOR PNP 50V 100MAResistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: VMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTC114EMFHAT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A VMT3Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: VMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DTC114EMFHAT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A VMT3Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: VMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 11285 шт: термін постачання 21-31 дні (днів) |
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DTC144EMFHAT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A VMT3Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: VMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. |
| SFR01MZPJ245 |
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Виробник: Rohm Semiconductor
Description: RES SMD 2.4M OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 2.4 MOhms
Description: RES SMD 2.4M OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 2.4 MOhms
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| SFR01MZPJ245 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 2.4M OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 2.4 MOhms
Description: RES SMD 2.4M OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 2.4 MOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.39 грн |
| 16+ | 20.04 грн |
| 50+ | 14.43 грн |
| 100+ | 11.88 грн |
| 500+ | 9.10 грн |
| 1000+ | 8.22 грн |
| 5000+ | 6.59 грн |
| R6004RND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 4A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.73Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 100 V
Description: 600V 4A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.73Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 100 V
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| R6004RND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 4A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.73Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 100 V
Description: 600V 4A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.73Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 100 V
на замовлення 2135 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.04 грн |
| 10+ | 47.16 грн |
| 25+ | 42.54 грн |
| 100+ | 35.19 грн |
| 250+ | 32.93 грн |
| 500+ | 31.56 грн |
| 1000+ | 29.94 грн |
| R6007RND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 7A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
Description: 600V 7A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 25.53 грн |
| R6007RND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 7A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
Description: 600V 7A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
на замовлення 3012 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.10 грн |
| 10+ | 68.72 грн |
| 25+ | 62.35 грн |
| 100+ | 51.94 грн |
| 250+ | 48.80 грн |
| 500+ | 46.91 грн |
| RSX058BM2STL |
![]() |
Виробник: Rohm Semiconductor
Description: 200V 3A, TO-252, ULTRA LOW IRSBD
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: 200V 3A, TO-252, ULTRA LOW IRSBD
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 41.18 грн |
| RSX058BM2STL |
![]() |
Виробник: Rohm Semiconductor
Description: 200V 3A, TO-252, ULTRA LOW IRSBD
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Description: 200V 3A, TO-252, ULTRA LOW IRSBD
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 93.36 грн |
| 10+ | 80.30 грн |
| 100+ | 62.62 грн |
| 500+ | 48.55 грн |
| 1000+ | 38.33 грн |
| TLR2376YFVM-CTR |
![]() |
Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 1.7 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 4 MHz
Slew Rate: 2V/µs
Current - Supply: 1.245mA
Qualification: AEC-Q100
Grade: Automotive
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 1.7 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 4 MHz
Slew Rate: 2V/µs
Current - Supply: 1.245mA
Qualification: AEC-Q100
Grade: Automotive
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| TLR2376YFVM-CTR |
![]() |
Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Current - Supply: 1.245mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 1.7 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 4 MHz
Slew Rate: 2V/µs
Qualification: AEC-Q100
Grade: Automotive
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Current - Supply: 1.245mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 1.7 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 4 MHz
Slew Rate: 2V/µs
Qualification: AEC-Q100
Grade: Automotive
на замовлення 5026 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 265.04 грн |
| 10+ | 162.73 грн |
| 25+ | 138.72 грн |
| 100+ | 104.74 грн |
| 250+ | 92.24 грн |
| 500+ | 84.54 грн |
| 1000+ | 76.82 грн |
| TLR2376YFJ-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOP-J
Voltage - Input Offset: 1.7 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 4 MHz
Slew Rate: 2V/µs
Current - Supply: 1.245mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOP-J
Voltage - Input Offset: 1.7 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 4 MHz
Slew Rate: 2V/µs
Current - Supply: 1.245mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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В кошику
од. на суму грн.
| TLR2376YFJ-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Gain Bandwidth Product: 4 MHz
Slew Rate: 2V/µs
Current - Supply: 1.245mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOP-J
Voltage - Input Offset: 1.7 µV
Current - Input Bias: 0.5 pA
Qualification: AEC-Q100
Grade: Automotive
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Gain Bandwidth Product: 4 MHz
Slew Rate: 2V/µs
Current - Supply: 1.245mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOP-J
Voltage - Input Offset: 1.7 µV
Current - Input Bias: 0.5 pA
Qualification: AEC-Q100
Grade: Automotive
на замовлення 2363 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 265.04 грн |
| 10+ | 162.73 грн |
| 25+ | 138.72 грн |
| 100+ | 104.74 грн |
| 250+ | 92.24 грн |
| 500+ | 84.54 грн |
| 1000+ | 76.82 грн |
| TLR2377YFJ-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Qualification: AEC-Q100
Grade: Automotive
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOP-J
Voltage - Input Offset: 1.7 mV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 4 MHz
Slew Rate: 2V/µs
Current - Supply: 1.245mA
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Qualification: AEC-Q100
Grade: Automotive
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOP-J
Voltage - Input Offset: 1.7 mV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 4 MHz
Slew Rate: 2V/µs
Current - Supply: 1.245mA
товару немає в наявності
В кошику
од. на суму грн.
| TLR2377YFJ-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOP-J
Voltage - Input Offset: 1.7 mV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 4 MHz
Slew Rate: 2V/µs
Current - Supply: 1.245mA
Qualification: AEC-Q100
Grade: Automotive
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOP-J
Voltage - Input Offset: 1.7 mV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 4 MHz
Slew Rate: 2V/µs
Current - Supply: 1.245mA
Qualification: AEC-Q100
Grade: Automotive
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
на замовлення 2481 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 196.21 грн |
| 10+ | 118.70 грн |
| 25+ | 100.41 грн |
| 100+ | 74.87 грн |
| 250+ | 65.37 грн |
| 500+ | 59.52 грн |
| 1000+ | 53.72 грн |
| SFR01MZPF1103 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 110K OHM 1% 1/16W 0402
Resistance: 110 kOhms
Part Status: Active
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.063W, 1/16W
Packaging: Tape & Reel (TR)
Description: RES 110K OHM 1% 1/16W 0402
Resistance: 110 kOhms
Part Status: Active
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.063W, 1/16W
Packaging: Tape & Reel (TR)
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| EMP11FHT2R |
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING, 80V, 100MA
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD6
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: HIGH-SPEED SWITCHING, 80V, 100MA
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD6
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
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| EMP11FHT2R |
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING, 80V, 100MA
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD6
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: HIGH-SPEED SWITCHING, 80V, 100MA
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD6
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
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| LPM-5763MU301 |
Виробник: Rohm Semiconductor
Description: LED DOT MTRX 24X24 RD, GRN, ORN
Packaging: Bulk
Color: Green, Red, Orange
Size / Dimension: 3.78" L x 3.78" W x 0.51" H (96.00mm x 96.00mm x 13.00mm)
Configuration: 24 x 24
Part Status: Obsolete
Description: LED DOT MTRX 24X24 RD, GRN, ORN
Packaging: Bulk
Color: Green, Red, Orange
Size / Dimension: 3.78" L x 3.78" W x 0.51" H (96.00mm x 96.00mm x 13.00mm)
Configuration: 24 x 24
Part Status: Obsolete
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| LM358FVT-GE2 |
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Виробник: Rohm Semiconductor
Description: GROUND SENSE OPERATIONAL AMPLIFI
Supplier Device Package: 8-TSSOP-B
Voltage - Input Offset: 1 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 800 kHz
Slew Rate: 0.3V/µs
Current - Supply: 600µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 32 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 30 mA
Number of Circuits: 2
Part Status: Active
Description: GROUND SENSE OPERATIONAL AMPLIFI
Supplier Device Package: 8-TSSOP-B
Voltage - Input Offset: 1 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 800 kHz
Slew Rate: 0.3V/µs
Current - Supply: 600µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 32 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 30 mA
Number of Circuits: 2
Part Status: Active
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| LM358FVT-GE2 |
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Виробник: Rohm Semiconductor
Description: GROUND SENSE OPERATIONAL AMPLIFI
Current - Output / Channel: 30 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-TSSOP-B
Voltage - Input Offset: 1 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 800 kHz
Slew Rate: 0.3V/µs
Current - Supply: 600µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 32 V
Voltage - Supply Span (Min): 3 V
Description: GROUND SENSE OPERATIONAL AMPLIFI
Current - Output / Channel: 30 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-TSSOP-B
Voltage - Input Offset: 1 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 800 kHz
Slew Rate: 0.3V/µs
Current - Supply: 600µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 32 V
Voltage - Supply Span (Min): 3 V
на замовлення 5779 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.63 грн |
| 10+ | 34.51 грн |
| 25+ | 30.96 грн |
| 100+ | 25.44 грн |
| 250+ | 23.72 грн |
| 500+ | 22.68 грн |
| 1000+ | 21.47 грн |
| BD8205EFV-ME2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC MOTOR DRVR 4.3V-10V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (5)
Voltage - Supply: 4.3V ~ 10V
Applications: Media Player
Voltage - Load: 4.3V ~ 10V
Supplier Device Package: 24-HTSSOP-B
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
Description: IC MOTOR DRVR 4.3V-10V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (5)
Voltage - Supply: 4.3V ~ 10V
Applications: Media Player
Voltage - Load: 4.3V ~ 10V
Supplier Device Package: 24-HTSSOP-B
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
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| BD7931F-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.5V-14V 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 14V
Applications: Media Player
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 14V
Supplier Device Package: 8-SOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
Description: IC MOTOR DRIVER 4.5V-14V 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 14V
Applications: Media Player
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 14V
Supplier Device Package: 8-SOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
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| RQ3E160ADTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 30V 16A MIDDLE POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: NCH 30V 16A MIDDLE POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 37.28 грн |
| RQ3E160ADTB1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 30V 16A MIDDLE POWER MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Description: NCH 30V 16A MIDDLE POWER MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.12 грн |
| 10+ | 90.51 грн |
| 100+ | 61.38 грн |
| 500+ | 45.87 грн |
| 1000+ | 43.69 грн |
| RRQ020P03TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Description: MOSFET P-CH 30V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
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| RRQ020P03TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Description: MOSFET P-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
на замовлення 2928 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.31 грн |
| 12+ | 26.59 грн |
| 100+ | 17.03 грн |
| 500+ | 12.11 грн |
| 1000+ | 10.87 грн |
| ESR25JZPF4R70 |
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Виробник: Rohm Semiconductor
Description: RES SMD 4.7 OHM 1% 2/3W 1210
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 Ohms
Description: RES SMD 4.7 OHM 1% 2/3W 1210
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 Ohms
на замовлення 3985 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| ESR25JZPF4R70 |
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Виробник: Rohm Semiconductor
Description: RES SMD 4.7 OHM 1% 2/3W 1210
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 Ohms
Description: RES SMD 4.7 OHM 1% 2/3W 1210
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 Ohms
на замовлення 3985 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.65 грн |
| 14+ | 23.39 грн |
| 50+ | 13.21 грн |
| 100+ | 9.22 грн |
| 500+ | 6.67 грн |
| 1000+ | 5.08 грн |
| ESR25JZPF6R20 |
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Виробник: Rohm Semiconductor
Description: RES SMD 6.2 OHM 1% 2/3W 1210
Tolerance: ±1%
Power (Watts): 0.667W, 2/3W
Packaging: Tape & Reel (TR)
Resistance: 6.2 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1210
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1210 (3225 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Description: RES SMD 6.2 OHM 1% 2/3W 1210
Tolerance: ±1%
Power (Watts): 0.667W, 2/3W
Packaging: Tape & Reel (TR)
Resistance: 6.2 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1210
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1210 (3225 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 6.49 грн |
| ESR25JZPF6R20 |
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Виробник: Rohm Semiconductor
Description: RES SMD 6.2 OHM 1% 2/3W 1210
Resistance: 6.2 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1210
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1210 (3225 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.667W, 2/3W
Packaging: Cut Tape (CT)
Description: RES SMD 6.2 OHM 1% 2/3W 1210
Resistance: 6.2 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1210
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1210 (3225 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.667W, 2/3W
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.39 грн |
| 17+ | 18.74 грн |
| 50+ | 12.88 грн |
| 100+ | 10.41 грн |
| 500+ | 7.64 грн |
| 1000+ | 6.77 грн |
| RSS095N05HZGTB |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 45V 9.5A POWER MOSFET: RSS09
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V
Qualification: AEC-Q101
Description: NCH 45V 9.5A POWER MOSFET: RSS09
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V
Qualification: AEC-Q101
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| RSS095N05HZGTB |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 45V 9.5A POWER MOSFET: RSS09
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V
Qualification: AEC-Q101
Description: NCH 45V 9.5A POWER MOSFET: RSS09
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 250.80 грн |
| 10+ | 157.40 грн |
| 100+ | 109.38 грн |
| 500+ | 83.41 грн |
| 1000+ | 77.23 грн |
| KTR10EZPF1500 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 150 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 Ohms
Description: RES SMD 150 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 2.17 грн |
| KTR10EZPF1500 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 150 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 Ohms
Description: RES SMD 150 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 Ohms
на замовлення 5865 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.66 грн |
| 48+ | 6.48 грн |
| 60+ | 5.12 грн |
| 71+ | 4.08 грн |
| 100+ | 3.51 грн |
| 250+ | 2.94 грн |
| 500+ | 2.64 грн |
| 1000+ | 2.31 грн |
| ESR18EZPF2210 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 221 OHM 1% 3/4W 1206
Resistance: 221 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.75W, 3/4W
Packaging: Tape & Reel (TR)
Description: RES 221 OHM 1% 3/4W 1206
Resistance: 221 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.75W, 3/4W
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 1.87 грн |
| 10000+ | 1.63 грн |
| ESR18EZPF2210 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 221 OHM 1% 3/4W 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.75W, 3/4W
Packaging: Cut Tape (CT)
Resistance: 221 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Description: RES 221 OHM 1% 3/4W 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.75W, 3/4W
Packaging: Cut Tape (CT)
Resistance: 221 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.45 грн |
| 48+ | 6.48 грн |
| 70+ | 4.36 грн |
| 100+ | 3.49 грн |
| 500+ | 2.51 грн |
| 1000+ | 2.20 грн |
| LTR50UZPFLR150 |
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Виробник: Rohm Semiconductor
Description: HIGH POWER LOW OHMIC CHIP RESIST
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 150 mOhms
Description: HIGH POWER LOW OHMIC CHIP RESIST
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 150 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 27.30 грн |
| LTR50UZPFLR150 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH POWER LOW OHMIC CHIP RESIST
Resistance: 150 mOhms
Part Status: Active
Height - Seated (Max): 0.029" (0.73mm)
Supplier Device Package: 1020
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 2010 (5025 Metric), 1020
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±1%
Power (Watts): 2W
Packaging: Cut Tape (CT)
Description: HIGH POWER LOW OHMIC CHIP RESIST
Resistance: 150 mOhms
Part Status: Active
Height - Seated (Max): 0.029" (0.73mm)
Supplier Device Package: 1020
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 2010 (5025 Metric), 1020
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±1%
Power (Watts): 2W
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.16 грн |
| 10+ | 63.92 грн |
| 50+ | 53.62 грн |
| 100+ | 43.54 грн |
| 500+ | 30.96 грн |
| 1000+ | 25.74 грн |
| DTC114EUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.45 грн |
| ML610Q174-447GAZWAAL |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
DigiKey Programmable: Not Verified
Number of I/O: 49
Part Status: Last Time Buy
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Speed: 8.4MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Bulk
Description: IC MCU 8BIT 128KB FLASH 80QFP
DigiKey Programmable: Not Verified
Number of I/O: 49
Part Status: Last Time Buy
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Speed: 8.4MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BD733L2FP-C-EVK |
Виробник: Rohm Semiconductor
Description: LDO_EVK_BD7XXL2X BD733L2FP-C
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.37V ~ 45V
Current - Output: 200mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: BD733L2-C
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
Description: LDO_EVK_BD7XXL2X BD733L2FP-C
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.37V ~ 45V
Current - Output: 200mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: BD733L2-C
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| SMLP14ECNWT86 |
![]() |
Виробник: Rohm Semiconductor
Description: LED GREEN DIFFUSED 0402 SMD
Package / Case: 0402 (1005 Metric)
Packaging: Tape & Reel (TR)
Lens Size: 1.00mm x 0.60mm
Lens Style: Rectangle with Flat Top
Part Status: Active
Lens Transparency: Diffused
Supplier Device Package: 0402
Wavelength - Dominant: 527nm
Height (Max): 0.25mm
Current - Test: 5mA
Lens Color: White
Voltage - Forward (Vf) (Typ): 3V
Millicandela Rating: 110mcd
Mounting Type: Surface Mount
Size / Dimension: 1.00mm L x 0.60mm W
Color: Green
Description: LED GREEN DIFFUSED 0402 SMD
Package / Case: 0402 (1005 Metric)
Packaging: Tape & Reel (TR)
Lens Size: 1.00mm x 0.60mm
Lens Style: Rectangle with Flat Top
Part Status: Active
Lens Transparency: Diffused
Supplier Device Package: 0402
Wavelength - Dominant: 527nm
Height (Max): 0.25mm
Current - Test: 5mA
Lens Color: White
Voltage - Forward (Vf) (Typ): 3V
Millicandela Rating: 110mcd
Mounting Type: Surface Mount
Size / Dimension: 1.00mm L x 0.60mm W
Color: Green
товару немає в наявності
В кошику
од. на суму грн.
| SMLP14ECNWT86 |
![]() |
Виробник: Rohm Semiconductor
Description: LED GREEN DIFFUSED 0402 SMD
Lens Size: 1.00mm x 0.60mm
Lens Style: Rectangle with Flat Top
Part Status: Active
Lens Transparency: Diffused
Supplier Device Package: 0402
Wavelength - Dominant: 527nm
Height (Max): 0.25mm
Current - Test: 5mA
Lens Color: White
Voltage - Forward (Vf) (Typ): 3V
Millicandela Rating: 110mcd
Mounting Type: Surface Mount
Size / Dimension: 1.00mm L x 0.60mm W
Color: Green
Package / Case: 0402 (1005 Metric)
Packaging: Cut Tape (CT)
Description: LED GREEN DIFFUSED 0402 SMD
Lens Size: 1.00mm x 0.60mm
Lens Style: Rectangle with Flat Top
Part Status: Active
Lens Transparency: Diffused
Supplier Device Package: 0402
Wavelength - Dominant: 527nm
Height (Max): 0.25mm
Current - Test: 5mA
Lens Color: White
Voltage - Forward (Vf) (Typ): 3V
Millicandela Rating: 110mcd
Mounting Type: Surface Mount
Size / Dimension: 1.00mm L x 0.60mm W
Color: Green
Package / Case: 0402 (1005 Metric)
Packaging: Cut Tape (CT)
на замовлення 4610 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 92.57 грн |
| 10+ | 55.16 грн |
| 100+ | 37.95 грн |
| 500+ | 29.26 грн |
| 1000+ | 27.31 грн |
| 2000+ | 25.72 грн |
| RRH100P03GZETB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 650mW (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 650mW (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 45.87 грн |
| RRH140P03GZETB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 14A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 650mW (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 14A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 650mW (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| SDR10EZPF3R30 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 3.3 OHM 1% 1/2W 0805
Resistance: 3.3 Ohms
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Description: RES 3.3 OHM 1% 1/2W 0805
Resistance: 3.3 Ohms
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
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| SDR10EZPF3R30 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 3.3 OHM 1% 1/2W 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 3.3 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Description: RES 3.3 OHM 1% 1/2W 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 3.3 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.94 грн |
| 17+ | 18.59 грн |
| 50+ | 9.81 грн |
| 100+ | 6.83 грн |
| 500+ | 4.13 грн |
| 1000+ | 2.86 грн |
| SDR10EZPJ3R3 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 3.3 OHM 5% 1/2W 0805
Resistance: 3.3 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Description: RES 3.3 OHM 5% 1/2W 0805
Resistance: 3.3 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
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| SDR10EZPJ3R3 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 3.3 OHM 5% 1/2W 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 3.3 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Description: RES 3.3 OHM 5% 1/2W 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 3.3 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
на замовлення 4600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.41 грн |
| 22+ | 14.40 грн |
| 50+ | 7.59 грн |
| 100+ | 5.28 грн |
| 500+ | 3.19 грн |
| 1000+ | 2.21 грн |
| BA178M24CP-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 24V 500MA TO220-3
Voltage Dropout (Max): 2V @ 500mA (Typ)
PSRR: 55dB (120Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 24V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 33V
Current - Quiescent (Iq): 4.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3 Cropped Leads
Packaging: Tape & Reel (TR)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 24V 500MA TO220-3
Voltage Dropout (Max): 2V @ 500mA (Typ)
PSRR: 55dB (120Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 24V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 33V
Current - Quiescent (Iq): 4.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3 Cropped Leads
Packaging: Tape & Reel (TR)
Current - Supply (Max): 6 mA
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| BA178M24CP-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 24V 500MA TO220-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 24V
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 24V 500MA TO220-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 24V
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
на замовлення 462 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 109.97 грн |
| 10+ | 77.25 грн |
| 25+ | 70.12 грн |
| 100+ | 58.49 грн |
| 250+ | 55.00 грн |
| DTC124EMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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| DTC124EMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
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| DTA115EMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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од. на суму грн.
| DTA115EMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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| DTA124XMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: DIGITAL TRANSISTOR PNP 50V 100MA
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Description: DIGITAL TRANSISTOR PNP 50V 100MA
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
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| DTA124XMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: DIGITAL TRANSISTOR PNP 50V 100MA
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: DIGITAL TRANSISTOR PNP 50V 100MA
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
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од. на суму грн.
| DTC114EMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 4.12 грн |
| DTC114EMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 11285 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.94 грн |
| 23+ | 13.33 грн |
| 100+ | 8.33 грн |
| 500+ | 5.79 грн |
| 1000+ | 5.13 грн |
| 2000+ | 4.58 грн |
| DTC144EMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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