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R6004RND3TL1 R6004RND3TL1 Rohm Semiconductor r6004rnd3tl1-e.pdf Description: 600V 4A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.73Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 100 V
товару немає в наявності
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R6004RND3TL1 R6004RND3TL1 Rohm Semiconductor r6004rnd3tl1-e.pdf Description: 600V 4A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.73Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 100 V
на замовлення 2135 шт:
термін постачання 21-31 дні (днів)
5+73.06 грн
10+50.62 грн
25+45.64 грн
100+37.76 грн
250+35.33 грн
500+33.87 грн
1000+32.13 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
R6007RND3TL1 R6007RND3TL1 Rohm Semiconductor r6007rnd3tl1-e.pdf Description: 600V 7A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+27.39 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
R6007RND3TL1 R6007RND3TL1 Rohm Semiconductor r6007rnd3tl1-e.pdf Description: 600V 7A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
на замовлення 3017 шт:
термін постачання 21-31 дні (днів)
4+104.97 грн
10+73.75 грн
25+66.93 грн
100+55.73 грн
250+52.36 грн
500+50.33 грн
1000+47.86 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
RSX058BM2STL RSX058BM2STL Rohm Semiconductor datasheet?p=RSX058BM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 200V 3A, TO-252, ULTRA LOW IRSBD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+43.71 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RSX058BM2STL RSX058BM2STL Rohm Semiconductor datasheet?p=RSX058BM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 200V 3A, TO-252, ULTRA LOW IRSBD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
4+99.09 грн
10+85.23 грн
100+66.47 грн
500+51.54 грн
1000+40.69 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TLR2376YFVM-CTR TLR2376YFVM-CTR Rohm Semiconductor datasheet?p=TLR2376YFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
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TLR2376YFVM-CTR TLR2376YFVM-CTR Rohm Semiconductor datasheet?p=TLR2376YFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5026 шт:
термін постачання 21-31 дні (днів)
2+281.33 грн
10+172.73 грн
25+147.24 грн
100+111.17 грн
250+97.91 грн
500+89.74 грн
1000+81.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLR2376YFJ-CE2 TLR2376YFJ-CE2 Rohm Semiconductor datasheet?p=TLR2376YFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-SOP-J
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLR2376YFJ-CE2 TLR2376YFJ-CE2 Rohm Semiconductor datasheet?p=TLR2376YFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-SOP-J
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2363 шт:
термін постачання 21-31 дні (днів)
2+281.33 грн
10+172.73 грн
25+147.24 грн
100+111.17 грн
250+97.91 грн
500+89.74 грн
1000+81.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLR2377YFJ-CE2 TLR2377YFJ-CE2 Rohm Semiconductor datasheet?p=TLR2377YFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 8-SOP-J
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLR2377YFJ-CE2 TLR2377YFJ-CE2 Rohm Semiconductor datasheet?p=TLR2377YFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 8-SOP-J
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2481 шт:
термін постачання 21-31 дні (днів)
2+208.27 грн
10+125.99 грн
25+106.58 грн
100+79.47 грн
250+69.39 грн
500+63.17 грн
1000+57.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SFR01MZPF1103 SFR01MZPF1103 Rohm Semiconductor sfr-e.pdf Description: RES 110K OHM 1% 1/16W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 110 kOhms
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EMP11FHT2R EMP11FHT2R Rohm Semiconductor Description: HIGH-SPEED SWITCHING, 80V, 100MA
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD6
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
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EMP11FHT2R EMP11FHT2R Rohm Semiconductor Description: HIGH-SPEED SWITCHING, 80V, 100MA
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD6
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
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LPM-5763MU301 LPM-5763MU301 Rohm Semiconductor Description: LED DOT MTRX 24X24 RD, GRN, ORN
Packaging: Bulk
Color: Green, Red, Orange
Size / Dimension: 3.78" L x 3.78" W x 0.51" H (96.00mm x 96.00mm x 13.00mm)
Configuration: 24 x 24
Part Status: Obsolete
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LM358FVT-GE2 LM358FVT-GE2 Rohm Semiconductor datasheet?p=LM358FVT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 600µA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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LM358FVT-GE2 LM358FVT-GE2 Rohm Semiconductor datasheet?p=LM358FVT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 600µA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
на замовлення 5779 шт:
термін постачання 21-31 дні (днів)
7+53.75 грн
10+36.63 грн
25+32.86 грн
100+27.00 грн
250+25.18 грн
500+24.08 грн
1000+22.79 грн
Мінімальне замовлення: 7
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BD8205EFV-ME2 BD8205EFV-ME2 Rohm Semiconductor bd8205efv-m-e.pdf Description: IC MOTOR DRVR 4.3V-10V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (5)
Voltage - Supply: 4.3V ~ 10V
Applications: Media Player
Voltage - Load: 4.3V ~ 10V
Supplier Device Package: 24-HTSSOP-B
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
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BD7931F-E2 BD7931F-E2 Rohm Semiconductor bh6578fvm-e.pdf Description: IC MOTOR DRIVER 4.5V-14V 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 14V
Applications: Media Player
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 14V
Supplier Device Package: 8-SOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
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RQ3E160ADTB1 RQ3E160ADTB1 Rohm Semiconductor datasheet?p=RQ3E160AD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 16A MIDDLE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+39.57 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RQ3E160ADTB1 RQ3E160ADTB1 Rohm Semiconductor datasheet?p=RQ3E160AD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 16A MIDDLE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3+140.24 грн
10+96.07 грн
100+65.16 грн
500+48.69 грн
1000+46.37 грн
Мінімальне замовлення: 3
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RRQ020P03TCR RRQ020P03TCR Rohm Semiconductor datasheet?p=RRQ020P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
RRQ020P03TCR RRQ020P03TCR Rohm Semiconductor datasheet?p=RRQ020P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
на замовлення 2928 шт:
термін постачання 21-31 дні (днів)
8+47.03 грн
12+28.22 грн
100+18.07 грн
500+12.86 грн
1000+11.53 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
ESR25JZPF4R70 ESR25JZPF4R70 Rohm Semiconductor esr-e.pdf Description: RES SMD 4.7 OHM 1% 2/3W 1210
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 Ohms
на замовлення 3985 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ESR25JZPF4R70 ESR25JZPF4R70 Rohm Semiconductor esr-e.pdf Description: RES SMD 4.7 OHM 1% 2/3W 1210
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 Ohms
на замовлення 3985 шт:
термін постачання 21-31 дні (днів)
10+33.59 грн
14+24.83 грн
50+14.02 грн
100+9.78 грн
500+7.08 грн
1000+5.40 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ESR25JZPF6R20 ESR25JZPF6R20 Rohm Semiconductor esr-e.pdf Description: RES SMD 6.2 OHM 1% 2/3W 1210
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 6.2 Ohms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+6.89 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
ESR25JZPF6R20 ESR25JZPF6R20 Rohm Semiconductor esr-e.pdf Description: RES SMD 6.2 OHM 1% 2/3W 1210
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 6.2 Ohms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
9+38.63 грн
17+19.89 грн
50+13.67 грн
100+11.05 грн
500+8.11 грн
1000+7.18 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
RSS095N05HZGTB RSS095N05HZGTB Rohm Semiconductor rss095n05hzgtb-e.pdf Description: NCH 45V 9.5A POWER MOSFET: RSS09
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
RSS095N05HZGTB RSS095N05HZGTB Rohm Semiconductor rss095n05hzgtb-e.pdf Description: NCH 45V 9.5A POWER MOSFET: RSS09
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)
2+266.21 грн
10+167.07 грн
100+116.10 грн
500+88.53 грн
1000+81.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
KTR10EZPF1500 KTR10EZPF1500 Rohm Semiconductor ktr-e.pdf Description: RES SMD 150 OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+2.30 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
KTR10EZPF1500 KTR10EZPF1500 Rohm Semiconductor ktr-e.pdf Description: RES SMD 150 OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 Ohms
на замовлення 5865 шт:
термін постачання 21-31 дні (днів)
25+13.44 грн
48+6.87 грн
60+5.43 грн
71+4.33 грн
100+3.73 грн
250+3.12 грн
500+2.80 грн
1000+2.45 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
ESR18EZPF2210 ESR18EZPF2210 Rohm Semiconductor esr-e.pdf Description: RES 221 OHM 1% 3/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 221 Ohms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+1.99 грн
10000+1.73 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ESR18EZPF2210 ESR18EZPF2210 Rohm Semiconductor esr-e.pdf Description: RES 221 OHM 1% 3/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 221 Ohms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
24+14.28 грн
48+6.87 грн
70+4.63 грн
100+3.70 грн
500+2.66 грн
1000+2.34 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
LTR50UZPFLR150 LTR50UZPFLR150 Rohm Semiconductor ltr-low-e.pdf Description: HIGH POWER LOW OHMIC CHIP RESIST
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 150 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+28.98 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
LTR50UZPFLR150 LTR50UZPFLR150 Rohm Semiconductor ltr-low-e.pdf Description: HIGH POWER LOW OHMIC CHIP RESIST
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 150 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5+79.78 грн
10+67.85 грн
50+56.91 грн
100+46.22 грн
500+32.87 грн
1000+27.32 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DTC114EUBTL DTC114EUBTL Rohm Semiconductor datasheet?p=DTC114EUB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.66 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ML610Q174-447GAZWAAL Rohm Semiconductor ML610Q174_8-31-18.pdf Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
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BD733L2FP-C-EVK Rohm Semiconductor Description: LDO_EVK_BD7XXL2X BD733L2FP-C
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.37V ~ 45V
Current - Output: 200mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: BD733L2-C
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
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SMLP14ECNWT86 SMLP14ECNWT86 Rohm Semiconductor datasheet?p=SMLP14ECNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN DIFFUSED 0402 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Color: Green
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 110mcd
Voltage - Forward (Vf) (Typ): 3V
Lens Color: White
Current - Test: 5mA
Height (Max): 0.25mm
Wavelength - Dominant: 527nm
Supplier Device Package: 0402
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.00mm x 0.60mm
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SMLP14ECNWT86 SMLP14ECNWT86 Rohm Semiconductor datasheet?p=SMLP14ECNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN DIFFUSED 0402 SMD
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Color: Green
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 110mcd
Voltage - Forward (Vf) (Typ): 3V
Lens Color: White
Current - Test: 5mA
Height (Max): 0.25mm
Wavelength - Dominant: 527nm
Supplier Device Package: 0402
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.00mm x 0.60mm
на замовлення 4610 шт:
термін постачання 21-31 дні (днів)
4+98.25 грн
10+58.55 грн
100+40.28 грн
500+31.06 грн
1000+28.99 грн
2000+27.30 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
RRH100P03GZETB RRH100P03GZETB Rohm Semiconductor rrh100p03tb1-e.pdf Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+48.69 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RRH140P03GZETB RRH140P03GZETB Rohm Semiconductor rrh140p03tb1-e.pdf Description: MOSFET P-CH 30V 14A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
SDR10EZPF3R30 SDR10EZPF3R30 Rohm Semiconductor sdr-e.pdf Description: RES 3.3 OHM 1% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
товару немає в наявності
В кошику  од. на суму  грн.
SDR10EZPF3R30 SDR10EZPF3R30 Rohm Semiconductor sdr-e.pdf Description: RES 3.3 OHM 1% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
14+24.35 грн
17+19.73 грн
50+10.42 грн
100+7.25 грн
500+4.38 грн
1000+3.04 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SDR10EZPJ3R3 SDR10EZPJ3R3 Rohm Semiconductor sdr-e.pdf Description: RES 3.3 OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
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SDR10EZPJ3R3 SDR10EZPJ3R3 Rohm Semiconductor sdr-e.pdf Description: RES 3.3 OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
на замовлення 4600 шт:
термін постачання 21-31 дні (днів)
19+18.48 грн
22+15.28 грн
50+8.05 грн
100+5.60 грн
500+3.39 грн
1000+2.35 грн
Мінімальне замовлення: 19
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BA178M24CP-E2 BA178M24CP-E2 Rohm Semiconductor datasheet?p=BA178M24CP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 24V 500MA TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 24V
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
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BA178M24CP-E2 BA178M24CP-E2 Rohm Semiconductor datasheet?p=BA178M24CP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 24V 500MA TO220-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 24V
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
3+116.73 грн
10+82.00 грн
25+74.43 грн
100+62.09 грн
250+58.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DTC124EMFHAT2L DTC124EMFHAT2L Rohm Semiconductor datasheet?p=DTC124EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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DTC124EMFHAT2L DTC124EMFHAT2L Rohm Semiconductor datasheet?p=DTC124EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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DTA115EMFHAT2L DTA115EMFHAT2L Rohm Semiconductor datasheet?p=DTA115EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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DTA115EMFHAT2L DTA115EMFHAT2L Rohm Semiconductor datasheet?p=DTA115EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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DTA124XMFHAT2L DTA124XMFHAT2L Rohm Semiconductor datasheet?p=DTA124XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIGITAL TRANSISTOR PNP 50V 100MA
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTA124XMFHAT2L DTA124XMFHAT2L Rohm Semiconductor datasheet?p=DTA124XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIGITAL TRANSISTOR PNP 50V 100MA
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTC114EMFHAT2L DTC114EMFHAT2L Rohm Semiconductor datasheet?p=DTC114EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN DIGITAL TRANSISTOR (100MA/50
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTC114EMFHAT2L DTC114EMFHAT2L Rohm Semiconductor datasheet?p=DTC114EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN DIGITAL TRANSISTOR (100MA/50
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTC144EMFHAT2L DTC144EMFHAT2L Rohm Semiconductor datasheet?p=DTC144EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTC144EMFHAT2L DTC144EMFHAT2L Rohm Semiconductor datasheet?p=DTC144EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTC123EMFHAT2L DTC123EMFHAT2L Rohm Semiconductor datasheet?p=DTC123EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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R6004RND3TL1 r6004rnd3tl1-e.pdf
R6004RND3TL1
Виробник: Rohm Semiconductor
Description: 600V 4A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.73Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 100 V
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R6004RND3TL1 r6004rnd3tl1-e.pdf
R6004RND3TL1
Виробник: Rohm Semiconductor
Description: 600V 4A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.73Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 100 V
на замовлення 2135 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.06 грн
10+50.62 грн
25+45.64 грн
100+37.76 грн
250+35.33 грн
500+33.87 грн
1000+32.13 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
R6007RND3TL1 r6007rnd3tl1-e.pdf
R6007RND3TL1
Виробник: Rohm Semiconductor
Description: 600V 7A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+27.39 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
R6007RND3TL1 r6007rnd3tl1-e.pdf
R6007RND3TL1
Виробник: Rohm Semiconductor
Description: 600V 7A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
на замовлення 3017 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+104.97 грн
10+73.75 грн
25+66.93 грн
100+55.73 грн
250+52.36 грн
500+50.33 грн
1000+47.86 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
RSX058BM2STL datasheet?p=RSX058BM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSX058BM2STL
Виробник: Rohm Semiconductor
Description: 200V 3A, TO-252, ULTRA LOW IRSBD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+43.71 грн
Мінімальне замовлення: 2500
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RSX058BM2STL datasheet?p=RSX058BM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSX058BM2STL
Виробник: Rohm Semiconductor
Description: 200V 3A, TO-252, ULTRA LOW IRSBD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.09 грн
10+85.23 грн
100+66.47 грн
500+51.54 грн
1000+40.69 грн
Мінімальне замовлення: 4
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TLR2376YFVM-CTR datasheet?p=TLR2376YFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TLR2376YFVM-CTR
Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
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TLR2376YFVM-CTR datasheet?p=TLR2376YFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TLR2376YFVM-CTR
Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5026 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+281.33 грн
10+172.73 грн
25+147.24 грн
100+111.17 грн
250+97.91 грн
500+89.74 грн
1000+81.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLR2376YFJ-CE2 datasheet?p=TLR2376YFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TLR2376YFJ-CE2
Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-SOP-J
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
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TLR2376YFJ-CE2 datasheet?p=TLR2376YFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TLR2376YFJ-CE2
Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-SOP-J
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2363 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+281.33 грн
10+172.73 грн
25+147.24 грн
100+111.17 грн
250+97.91 грн
500+89.74 грн
1000+81.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLR2377YFJ-CE2 datasheet?p=TLR2377YFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TLR2377YFJ-CE2
Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 8-SOP-J
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
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TLR2377YFJ-CE2 datasheet?p=TLR2377YFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TLR2377YFJ-CE2
Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 8-SOP-J
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2481 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+208.27 грн
10+125.99 грн
25+106.58 грн
100+79.47 грн
250+69.39 грн
500+63.17 грн
1000+57.02 грн
Мінімальне замовлення: 2
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SFR01MZPF1103 sfr-e.pdf
SFR01MZPF1103
Виробник: Rohm Semiconductor
Description: RES 110K OHM 1% 1/16W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 110 kOhms
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EMP11FHT2R
EMP11FHT2R
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING, 80V, 100MA
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD6
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
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EMP11FHT2R
EMP11FHT2R
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING, 80V, 100MA
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD6
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
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LPM-5763MU301
LPM-5763MU301
Виробник: Rohm Semiconductor
Description: LED DOT MTRX 24X24 RD, GRN, ORN
Packaging: Bulk
Color: Green, Red, Orange
Size / Dimension: 3.78" L x 3.78" W x 0.51" H (96.00mm x 96.00mm x 13.00mm)
Configuration: 24 x 24
Part Status: Obsolete
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LM358FVT-GE2 datasheet?p=LM358FVT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM358FVT-GE2
Виробник: Rohm Semiconductor
Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 600µA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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LM358FVT-GE2 datasheet?p=LM358FVT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM358FVT-GE2
Виробник: Rohm Semiconductor
Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 600µA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
на замовлення 5779 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+53.75 грн
10+36.63 грн
25+32.86 грн
100+27.00 грн
250+25.18 грн
500+24.08 грн
1000+22.79 грн
Мінімальне замовлення: 7
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BD8205EFV-ME2 bd8205efv-m-e.pdf
BD8205EFV-ME2
Виробник: Rohm Semiconductor
Description: IC MOTOR DRVR 4.3V-10V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (5)
Voltage - Supply: 4.3V ~ 10V
Applications: Media Player
Voltage - Load: 4.3V ~ 10V
Supplier Device Package: 24-HTSSOP-B
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
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BD7931F-E2 bh6578fvm-e.pdf
BD7931F-E2
Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.5V-14V 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 14V
Applications: Media Player
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 14V
Supplier Device Package: 8-SOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
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RQ3E160ADTB1 datasheet?p=RQ3E160AD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3E160ADTB1
Виробник: Rohm Semiconductor
Description: NCH 30V 16A MIDDLE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+39.57 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RQ3E160ADTB1 datasheet?p=RQ3E160AD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3E160ADTB1
Виробник: Rohm Semiconductor
Description: NCH 30V 16A MIDDLE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+140.24 грн
10+96.07 грн
100+65.16 грн
500+48.69 грн
1000+46.37 грн
Мінімальне замовлення: 3
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RRQ020P03TCR datasheet?p=RRQ020P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRQ020P03TCR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
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RRQ020P03TCR datasheet?p=RRQ020P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRQ020P03TCR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
на замовлення 2928 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+47.03 грн
12+28.22 грн
100+18.07 грн
500+12.86 грн
1000+11.53 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
ESR25JZPF4R70 esr-e.pdf
ESR25JZPF4R70
Виробник: Rohm Semiconductor
Description: RES SMD 4.7 OHM 1% 2/3W 1210
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 Ohms
на замовлення 3985 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ESR25JZPF4R70 esr-e.pdf
ESR25JZPF4R70
Виробник: Rohm Semiconductor
Description: RES SMD 4.7 OHM 1% 2/3W 1210
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 Ohms
на замовлення 3985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.59 грн
14+24.83 грн
50+14.02 грн
100+9.78 грн
500+7.08 грн
1000+5.40 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ESR25JZPF6R20 esr-e.pdf
ESR25JZPF6R20
Виробник: Rohm Semiconductor
Description: RES SMD 6.2 OHM 1% 2/3W 1210
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 6.2 Ohms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+6.89 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
ESR25JZPF6R20 esr-e.pdf
ESR25JZPF6R20
Виробник: Rohm Semiconductor
Description: RES SMD 6.2 OHM 1% 2/3W 1210
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 6.2 Ohms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.63 грн
17+19.89 грн
50+13.67 грн
100+11.05 грн
500+8.11 грн
1000+7.18 грн
Мінімальне замовлення: 9
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RSS095N05HZGTB rss095n05hzgtb-e.pdf
RSS095N05HZGTB
Виробник: Rohm Semiconductor
Description: NCH 45V 9.5A POWER MOSFET: RSS09
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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RSS095N05HZGTB rss095n05hzgtb-e.pdf
RSS095N05HZGTB
Виробник: Rohm Semiconductor
Description: NCH 45V 9.5A POWER MOSFET: RSS09
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+266.21 грн
10+167.07 грн
100+116.10 грн
500+88.53 грн
1000+81.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
KTR10EZPF1500 ktr-e.pdf
KTR10EZPF1500
Виробник: Rohm Semiconductor
Description: RES SMD 150 OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+2.30 грн
Мінімальне замовлення: 5000
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KTR10EZPF1500 ktr-e.pdf
KTR10EZPF1500
Виробник: Rohm Semiconductor
Description: RES SMD 150 OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 Ohms
на замовлення 5865 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.44 грн
48+6.87 грн
60+5.43 грн
71+4.33 грн
100+3.73 грн
250+3.12 грн
500+2.80 грн
1000+2.45 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
ESR18EZPF2210 esr-e.pdf
ESR18EZPF2210
Виробник: Rohm Semiconductor
Description: RES 221 OHM 1% 3/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 221 Ohms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+1.99 грн
10000+1.73 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ESR18EZPF2210 esr-e.pdf
ESR18EZPF2210
Виробник: Rohm Semiconductor
Description: RES 221 OHM 1% 3/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 221 Ohms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+14.28 грн
48+6.87 грн
70+4.63 грн
100+3.70 грн
500+2.66 грн
1000+2.34 грн
Мінімальне замовлення: 24
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LTR50UZPFLR150 ltr-low-e.pdf
LTR50UZPFLR150
Виробник: Rohm Semiconductor
Description: HIGH POWER LOW OHMIC CHIP RESIST
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 150 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+28.98 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
LTR50UZPFLR150 ltr-low-e.pdf
LTR50UZPFLR150
Виробник: Rohm Semiconductor
Description: HIGH POWER LOW OHMIC CHIP RESIST
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 150 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+79.78 грн
10+67.85 грн
50+56.91 грн
100+46.22 грн
500+32.87 грн
1000+27.32 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DTC114EUBTL datasheet?p=DTC114EUB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTC114EUBTL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.66 грн
Мінімальне замовлення: 3000
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ML610Q174-447GAZWAAL ML610Q174_8-31-18.pdf
Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
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BD733L2FP-C-EVK
Виробник: Rohm Semiconductor
Description: LDO_EVK_BD7XXL2X BD733L2FP-C
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.37V ~ 45V
Current - Output: 200mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: BD733L2-C
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
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SMLP14ECNWT86 datasheet?p=SMLP14ECNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLP14ECNWT86
Виробник: Rohm Semiconductor
Description: LED GREEN DIFFUSED 0402 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Color: Green
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 110mcd
Voltage - Forward (Vf) (Typ): 3V
Lens Color: White
Current - Test: 5mA
Height (Max): 0.25mm
Wavelength - Dominant: 527nm
Supplier Device Package: 0402
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.00mm x 0.60mm
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SMLP14ECNWT86 datasheet?p=SMLP14ECNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLP14ECNWT86
Виробник: Rohm Semiconductor
Description: LED GREEN DIFFUSED 0402 SMD
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Color: Green
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 110mcd
Voltage - Forward (Vf) (Typ): 3V
Lens Color: White
Current - Test: 5mA
Height (Max): 0.25mm
Wavelength - Dominant: 527nm
Supplier Device Package: 0402
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.00mm x 0.60mm
на замовлення 4610 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+98.25 грн
10+58.55 грн
100+40.28 грн
500+31.06 грн
1000+28.99 грн
2000+27.30 грн
Мінімальне замовлення: 4
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RRH100P03GZETB rrh100p03tb1-e.pdf
RRH100P03GZETB
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+48.69 грн
Мінімальне замовлення: 2500
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RRH140P03GZETB rrh140p03tb1-e.pdf
RRH140P03GZETB
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 14A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V
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SDR10EZPF3R30 sdr-e.pdf
SDR10EZPF3R30
Виробник: Rohm Semiconductor
Description: RES 3.3 OHM 1% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
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SDR10EZPF3R30 sdr-e.pdf
SDR10EZPF3R30
Виробник: Rohm Semiconductor
Description: RES 3.3 OHM 1% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+24.35 грн
17+19.73 грн
50+10.42 грн
100+7.25 грн
500+4.38 грн
1000+3.04 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SDR10EZPJ3R3 sdr-e.pdf
SDR10EZPJ3R3
Виробник: Rohm Semiconductor
Description: RES 3.3 OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
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SDR10EZPJ3R3 sdr-e.pdf
SDR10EZPJ3R3
Виробник: Rohm Semiconductor
Description: RES 3.3 OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
на замовлення 4600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+18.48 грн
22+15.28 грн
50+8.05 грн
100+5.60 грн
500+3.39 грн
1000+2.35 грн
Мінімальне замовлення: 19
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BA178M24CP-E2 datasheet?p=BA178M24CP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA178M24CP-E2
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 24V 500MA TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 24V
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
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BA178M24CP-E2 datasheet?p=BA178M24CP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA178M24CP-E2
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 24V 500MA TO220-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 24V
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.73 грн
10+82.00 грн
25+74.43 грн
100+62.09 грн
250+58.38 грн
Мінімальне замовлення: 3
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DTC124EMFHAT2L datasheet?p=DTC124EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC124EMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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DTC124EMFHAT2L datasheet?p=DTC124EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC124EMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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DTA115EMFHAT2L datasheet?p=DTA115EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA115EMFHAT2L
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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DTA115EMFHAT2L datasheet?p=DTA115EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA115EMFHAT2L
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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DTA124XMFHAT2L datasheet?p=DTA124XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XMFHAT2L
Виробник: Rohm Semiconductor
Description: DIGITAL TRANSISTOR PNP 50V 100MA
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTA124XMFHAT2L datasheet?p=DTA124XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XMFHAT2L
Виробник: Rohm Semiconductor
Description: DIGITAL TRANSISTOR PNP 50V 100MA
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTC114EMFHAT2L datasheet?p=DTC114EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114EMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (100MA/50
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTC114EMFHAT2L datasheet?p=DTC114EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114EMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (100MA/50
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTC144EMFHAT2L datasheet?p=DTC144EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC144EMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товару немає в наявності
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DTC144EMFHAT2L datasheet?p=DTC144EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC144EMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товару немає в наявності
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DTC123EMFHAT2L datasheet?p=DTC123EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123EMFHAT2L
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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