Результат пошуку "2N3442" : 27
Вид перегляду :
Мінімальне замовлення: 2
Мінімальне замовлення: 10
| Фото | Назва | Виробник | Інформація |
Доступність |
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2N3442 | NTE Electronics |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 140V; 10A; 117W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 10A Power dissipation: 117W Case: TO3 Current gain: 20...70 Mounting: THT кількість в упаковці: 1 шт |
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2N3442 | MULTICOMP PRO |
Description: MULTICOMP PRO - 2N3442 - Bipolarer Einzeltransistor (BJT), universell, NPN, 140 V, 10 A, 117 W, TO-3, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 7.5hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 10A MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 117W Bauform - Transistor: TO-3 Anzahl der Pins: 2Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 140V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 80kHz Betriebstemperatur, max.: 200°C SVHC: No SVHC (23-Jan-2024) |
на замовлення 46 шт: термін постачання 21-31 дні (днів) |
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2N3442 PBFREE | Central Semiconductor Corp |
Description: TRANS NPN 140V 10A TO3 Packaging: Tube Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A Current - Collector Cutoff (Max): 200mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Frequency - Transition: 80kHz Supplier Device Package: TO-3 Part Status: Last Time Buy Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 117 W |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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2N3442 TIN/LEAD | Central Semiconductor |
Bipolar Transistors - BJT NPN 160Vcbo 160Vcev 140Vceo 7.0V 10A |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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2N3442G | ON Semiconductor |
Trans GP BJT NPN 140V 10A 117000mW 3-Pin(2+Tab) TO-3 Tray |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| 2N3442G | PMC-Sierra |
NPN 140V 10A 200mA 117W 2N3442G 2N3442 ON Semiconductors T2N3442 кількість в упаковці: 10 шт |
на замовлення 123 шт: термін постачання 28-31 дні (днів) |
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| JANTX2N3442 |
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на замовлення 311 шт: термін постачання 14-28 дні (днів) |
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2N3442 Код товару: 46391 |
Транзистори > Біполярні NPN Корпус: TO-204 fT: 80 MHz Uceo,V: 140 V Ucbo,V: 160 V Ic,A: 10 A h21: 12 / 72 |
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2N3442G Код товару: 152390 |
Транзистори > Біполярні NPN |
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2N3442 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 10A; 117W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 10A Power dissipation: 117W Case: TO3 Current gain: 20...70 Mounting: THT |
товар відсутній |
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2N3442 | onsemi |
Description: TRANS NPN 140V 10A TO204 Packaging: Tray Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A Current - Collector Cutoff (Max): 200mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Frequency - Transition: 80MHz Supplier Device Package: TO-204 (TO-3) Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 117 W |
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| 2N3442 | Microchip Technology |
Description: NPN POWER SILICON TRANSISTORS Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Supplier Device Package: TO-204AD (TO-3) Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 6 W |
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2N3442 | onsemi |
Bipolar Transistors - BJT 10A 140V 117W NPN |
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2N3442 | Microchip Technology |
Trans GP BJT NPN 140V 10A 6000mW 3-Pin(2+Tab) TO-3 Tray |
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2N3442 | Microchip Technology |
Bipolar Transistors - BJT Power BJT |
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2N3442 PBFREE | Central Semiconductor |
Bipolar Transistors - BJT NPN Power SW |
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2N3442G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 10A Power dissipation: 117W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 800kHz |
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2N3442G | ON Semiconductor |
Trans GP BJT NPN 140V 10A 117000mW 3-Pin(2+Tab) TO-3 Tray |
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2N3442G | onsemi |
Bipolar Transistors - BJT 10A 140V 117W NPN |
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2N3442G | onsemi |
Description: TRANS NPN 140V 10A TO204 Packaging: Tray Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A Current - Collector Cutoff (Max): 200mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Frequency - Transition: 80kHz Supplier Device Package: TO-204 (TO-3) Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 117 W |
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| JAN2N3442 | Microchip Technology |
Description: TRANS NPN 140V 10A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Supplier Device Package: TO-3 (TO-204AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 6 W Qualification: MIL-PRF-19500/370 |
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JAN2N3442 | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
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JANTX2N3442 | Microchip Technology |
Description: TRANS NPN 140V 10A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Supplier Device Package: TO-3 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 6 W Qualification: MIL-PRF-19500/307 |
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JANTX2N3442 | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
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| JANTXV2N3442 | Microchip Technology |
Description: TRANS NPN 140V 10A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Supplier Device Package: TO-3 (TO-204AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 6 W Qualification: MIL-PRF-19500/370 |
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JANTXV2N3442 | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
товар відсутній |
| 2N3442 |
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Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Current gain: 20...70
Mounting: THT
кількість в упаковці: 1 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Current gain: 20...70
Mounting: THT
кількість в упаковці: 1 шт
товар відсутній
| 2N3442 |
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Виробник: MULTICOMP PRO
Description: MULTICOMP PRO - 2N3442 - Bipolarer Einzeltransistor (BJT), universell, NPN, 140 V, 10 A, 117 W, TO-3, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 7.5hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 10A
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 117W
Bauform - Transistor: TO-3
Anzahl der Pins: 2Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 140V
productTraceability: No
Wandlerpolarität: NPN
Übergangsfrequenz: 80kHz
Betriebstemperatur, max.: 200°C
SVHC: No SVHC (23-Jan-2024)
Description: MULTICOMP PRO - 2N3442 - Bipolarer Einzeltransistor (BJT), universell, NPN, 140 V, 10 A, 117 W, TO-3, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 7.5hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 10A
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 117W
Bauform - Transistor: TO-3
Anzahl der Pins: 2Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 140V
productTraceability: No
Wandlerpolarität: NPN
Übergangsfrequenz: 80kHz
Betriebstemperatur, max.: 200°C
SVHC: No SVHC (23-Jan-2024)
на замовлення 46 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 432.59 грн |
| 10+ | 309.45 грн |
| 2N3442 PBFREE |
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Виробник: Central Semiconductor Corp
Description: TRANS NPN 140V 10A TO3
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A
Current - Collector Cutoff (Max): 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Frequency - Transition: 80kHz
Supplier Device Package: TO-3
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 117 W
Description: TRANS NPN 140V 10A TO3
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A
Current - Collector Cutoff (Max): 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Frequency - Transition: 80kHz
Supplier Device Package: TO-3
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 117 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| 2N3442 TIN/LEAD |
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Виробник: Central Semiconductor
Bipolar Transistors - BJT NPN 160Vcbo 160Vcev 140Vceo 7.0V 10A
Bipolar Transistors - BJT NPN 160Vcbo 160Vcev 140Vceo 7.0V 10A
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 507.36 грн |
| 10+ | 428.09 грн |
| 20+ | 337.07 грн |
| 100+ | 309.63 грн |
| 260+ | 291.33 грн |
| 500+ | 273.74 грн |
| 1000+ | 246.29 грн |
| 2N3442G |
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Виробник: ON Semiconductor
Trans GP BJT NPN 140V 10A 117000mW 3-Pin(2+Tab) TO-3 Tray
Trans GP BJT NPN 140V 10A 117000mW 3-Pin(2+Tab) TO-3 Tray
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| 2N3442G |
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Виробник: PMC-Sierra
NPN 140V 10A 200mA 117W 2N3442G 2N3442 ON Semiconductors T2N3442
кількість в упаковці: 10 шт
NPN 140V 10A 200mA 117W 2N3442G 2N3442 ON Semiconductors T2N3442
кількість в упаковці: 10 шт
на замовлення 123 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 115.84 грн |
| 2N3442 |
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Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Current gain: 20...70
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Current gain: 20...70
Mounting: THT
товар відсутній
| 2N3442 |
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Виробник: onsemi
Description: TRANS NPN 140V 10A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A
Current - Collector Cutoff (Max): 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Frequency - Transition: 80MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 117 W
Description: TRANS NPN 140V 10A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A
Current - Collector Cutoff (Max): 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Frequency - Transition: 80MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 117 W
товар відсутній
| 2N3442 |
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Виробник: Microchip Technology
Description: NPN POWER SILICON TRANSISTORS
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Description: NPN POWER SILICON TRANSISTORS
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
товар відсутній
| 2N3442 |
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Виробник: Microchip Technology
Trans GP BJT NPN 140V 10A 6000mW 3-Pin(2+Tab) TO-3 Tray
Trans GP BJT NPN 140V 10A 6000mW 3-Pin(2+Tab) TO-3 Tray
товар відсутній
| 2N3442G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
товар відсутній
| 2N3442G |
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Виробник: ON Semiconductor
Trans GP BJT NPN 140V 10A 117000mW 3-Pin(2+Tab) TO-3 Tray
Trans GP BJT NPN 140V 10A 117000mW 3-Pin(2+Tab) TO-3 Tray
товар відсутній
| 2N3442G |
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Виробник: onsemi
Description: TRANS NPN 140V 10A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A
Current - Collector Cutoff (Max): 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Frequency - Transition: 80kHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 117 W
Description: TRANS NPN 140V 10A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A
Current - Collector Cutoff (Max): 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Frequency - Transition: 80kHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 117 W
товар відсутній
| JAN2N3442 |
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Виробник: Microchip Technology
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/370
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/370
товар відсутній
| JANTX2N3442 |
|
Виробник: Microchip Technology
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/307
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/307
товар відсутній
| JANTXV2N3442 |
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Виробник: Microchip Technology
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/370
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/370
товар відсутній