Результат пошуку "er308" : 86
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Вид перегляду :
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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HER308G R0G | Taiwan Semiconductor | Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD |
товар відсутній |
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HER308G-AP | Micro Commercial Components | Diode Switching 1KV 3A 2-Pin DO-201AD Ammo |
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HER308G-AP | Micro Commercial Co |
Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товар відсутній |
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HER308G-AP | Micro Commercial Components (MCC) | Rectifiers Super Fast Recovery Rectifiers |
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HER308G-B | Rectron | Rectifiers 3A 1000V 70ns GP |
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HER308G-K | Taiwan Semiconductor Corporation |
Description: 75NS, 3A, 1000V, HIGH EFFICIENT Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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HER308G-K | Taiwan Semiconductor | Rectifiers 75ns, 3A, 1000V, High Efficient Recovery Rectifier |
товар відсутній |
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HER308G-K A0G | Taiwan Semiconductor | Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD Ammo |
товар відсутній |
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HER308G-K A0G | Taiwan Semiconductor | Rectifiers 75ns, 3A, 1000V, High Efficient Recovery Rectifier |
товар відсутній |
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HER308G-T | Rectron | Rectifiers 3A 1000V 70ns GP |
товар відсутній |
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HER308G-T | Rectron | Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD T/R |
товар відсутній |
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HER308G-TP | Micro Commercial Co |
Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товар відсутній |
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HER308G-TP | Micro Commercial Components | Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD T/R |
товар відсутній |
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HER308G-TP | Micro Commercial Components (MCC) | Rectifiers 3A HIGH EFFICIENT RECTIFIER |
товар відсутній |
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HER308GA-G | Comchip Technology |
Description: DIODE GEN PURP 1KV 3A DO27 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-27 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товар відсутній |
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HER308GH | Taiwan Semiconductor | Rectifiers 75ns, 3A, 1000V, High Efficient Recovery Rectifier |
товар відсутній |
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HER308GHA0G | Taiwan Semiconductor | 3A,1000V, GLASS PASSIVATED HIGH EFFICIENT RECTIFIER |
товар відсутній |
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HER308GHA0G | Taiwan Semiconductor | Rectifiers 75ns, 3A, 1000V, High Efficient Recovery Rectifier |
товар відсутній |
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HER308GHR0G | Taiwan Semiconductor | HER308GHR0G |
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HER308GT-G | Comchip Technology |
Description: DIODE GEN PURP 1KV 3A DO27 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-27 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товар відсутній |
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500696 | Bergquist |
Description: PM1100 PROJ CAPACITIVE CONTROLLR Packaging: Box For Use With/Related Products: PenMount® 1100 Control Board Accessory Type: Touch Screen - Controller Part Status: Obsolete |
товар відсутній |
HER308G R0G |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD
Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD
товар відсутній
HER308G-AP |
Виробник: Micro Commercial Components
Diode Switching 1KV 3A 2-Pin DO-201AD Ammo
Diode Switching 1KV 3A 2-Pin DO-201AD Ammo
товар відсутній
HER308G-AP |
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
HER308G-AP |
Виробник: Micro Commercial Components (MCC)
Rectifiers Super Fast Recovery Rectifiers
Rectifiers Super Fast Recovery Rectifiers
товар відсутній
HER308G-K |
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 3A, 1000V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: 75NS, 3A, 1000V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
HER308G-K |
Виробник: Taiwan Semiconductor
Rectifiers 75ns, 3A, 1000V, High Efficient Recovery Rectifier
Rectifiers 75ns, 3A, 1000V, High Efficient Recovery Rectifier
товар відсутній
HER308G-K A0G |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD Ammo
Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD Ammo
товар відсутній
HER308G-K A0G |
Виробник: Taiwan Semiconductor
Rectifiers 75ns, 3A, 1000V, High Efficient Recovery Rectifier
Rectifiers 75ns, 3A, 1000V, High Efficient Recovery Rectifier
товар відсутній
HER308G-TP |
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
HER308G-TP |
Виробник: Micro Commercial Components
Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD T/R
Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD T/R
товар відсутній
HER308G-TP |
Виробник: Micro Commercial Components (MCC)
Rectifiers 3A HIGH EFFICIENT RECTIFIER
Rectifiers 3A HIGH EFFICIENT RECTIFIER
товар відсутній
HER308GA-G |
Виробник: Comchip Technology
Description: DIODE GEN PURP 1KV 3A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
HER308GH |
Виробник: Taiwan Semiconductor
Rectifiers 75ns, 3A, 1000V, High Efficient Recovery Rectifier
Rectifiers 75ns, 3A, 1000V, High Efficient Recovery Rectifier
товар відсутній
HER308GHA0G |
Виробник: Taiwan Semiconductor
3A,1000V, GLASS PASSIVATED HIGH EFFICIENT RECTIFIER
3A,1000V, GLASS PASSIVATED HIGH EFFICIENT RECTIFIER
товар відсутній
HER308GHA0G |
Виробник: Taiwan Semiconductor
Rectifiers 75ns, 3A, 1000V, High Efficient Recovery Rectifier
Rectifiers 75ns, 3A, 1000V, High Efficient Recovery Rectifier
товар відсутній
HER308GT-G |
Виробник: Comchip Technology
Description: DIODE GEN PURP 1KV 3A DO27
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO27
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
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