Результат пошуку "es1c" : > 180
Вид перегляду :
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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ES1C-A40 | OMRON |
Category: Temp. Sensors - Resistance Thermometers Description: Sensor: temperature; 12÷24VDC; Temp: 0÷70°C; Leads: lead x5; 2m Leads: lead x5 Operating temperature: 0...70°C IP rating: IP67 Supply voltage: 12...24V DC Output configuration: analogue 4-20mA Temperature measuring range: 0...400°C Kind of sensor: infrared Type of sensor: temperature Cable length: 2m |
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ES1C-A40 | OMRON |
Category: Temp. Sensors - Resistance Thermometers Description: Sensor: temperature; 12÷24VDC; Temp: 0÷70°C; Leads: lead x5; 2m Leads: lead x5 Operating temperature: 0...70°C IP rating: IP67 Supply voltage: 12...24V DC Output configuration: analogue 4-20mA Temperature measuring range: 0...400°C Kind of sensor: infrared Type of sensor: temperature Cable length: 2m кількість в упаковці: 1 шт |
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ES1C-E3/5AT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Leakage current: 0.1mA Case: DO214AC; SMA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Max. off-state voltage: 150V Max. forward voltage: 0.92V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns |
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ES1C-E3/5AT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Leakage current: 0.1mA Case: DO214AC; SMA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Max. off-state voltage: 150V Max. forward voltage: 0.92V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns кількість в упаковці: 5 шт |
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ES1C-E3/5AT | Vishay | Diode Switching 150V 1A 2-Pin SMA T/R |
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ES1C-E3/5AT | Vishay | Rectifier Diode Switching 150V 1A 15ns 2-Pin SMA T/R |
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ES1C-E3/61T | Vishay | Diode Switching 150V 1A 2-Pin SMA T/R |
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ES1C-E3/61T | Vishay | Rectifier Diode Switching 150V 1A 15ns 2-Pin SMA T/R |
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ES1C-HF | Comchip Technology | Rectifiers RECTIFIER SUPER FAST RECOVERY 150V 1A SMA |
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ES1C-HF | Comchip Technology |
Description: DIODE GEN PURP 200V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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ES1C-M3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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ES1C-M3/5AT | Vishay General Semiconductor | Rectifiers 1A,150V,15NS,UF Rect, SMD |
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ES1C-M3/61T | Vishay | Diode Switching 150V 1A 2-Pin SMA T/R |
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ES1C-M3/61T | Vishay | Diode Switching 150V 1A 2-Pin SMA T/R |
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ES1C-M3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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ES1C-M3/61T | Vishay General Semiconductor | Rectifiers 1A,150V,15NS,UF Rect, SMD |
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ES1C-TP | Micro Commercial Components (MCC) | Rectifiers |
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ES1C-W | Rectron | Rectifiers SMA,1A,150V,35ns,GP |
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ES1CE-TP | Micro Commercial Components | Rectifier Diode Switching 150V 1A 50ns 2-Pin SMAE T/R |
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ES1CE-TP | Micro Commercial Co |
Description: DIODE GEN PURP 150V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMAE) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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ES1CH | Taiwan Semiconductor | Rectifiers 35ns, 1A, 150V, Super Fast Recovery Rectifier |
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ES1CHE3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V Qualification: AEC-Q101 |
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ES1CHE3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V Qualification: AEC-Q101 |
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ES1CHE3/61T | Vishay | Rectifier Diode Switching 150V 1A 15ns Automotive 2-Pin SMA T/R |
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ES1CHE3_A/H | Vishay | Diode Switching 150V 1A Automotive AEC-Q101 2-Pin SMA T/R |
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ES1CHE3_A/H | Vishay | Rectifier Diode Switching 150V 1A 15ns Automotive 2-Pin SMA T/R |
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ES1CHE3_A/H | Vishay | Diode Switching 150V 1A Automotive AEC-Q101 2-Pin SMA T/R |
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ES1CHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V Qualification: AEC-Q101 |
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ES1CHE3_A/I | Vishay | Diode Switching 150V 1A Automotive AEC-Q101 2-Pin SMA T/R |
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ES1CHE3_A/I | Vishay | Rectifier Diode Switching 150V 1A 15ns Automotive 2-Pin SMA T/R |
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ES1CHE3_A/I | Vishay | Diode Switching 150V 1A Automotive AEC-Q101 2-Pin SMA T/R |
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ES1CHM2G | Taiwan Semiconductor | Rectifier Diode Switching 150V 1A 35ns Automotive 2-Pin SMA T/R |
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ES1CHR3G | Taiwan Semiconductor | Rectifier Diode Switching 150V 1A 35ns Automotive 2-Pin SMA T/R |
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ES1CL | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 150V, SUPER FAST RECOV Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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ES1CL | Taiwan Semiconductor | Rectifiers 35ns, 1A, 150V, Super Fast Recovery Rectifier |
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ES1CL R2 | Taiwan Semiconductor | Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA T/R |
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ES1CL R2 | Taiwan Semiconductor | Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA T/R |
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ES1CL R2G | Taiwan Semiconductor | Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA |
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ES1CL R3 | Taiwan Semiconductor | Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA |
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ES1CL R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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ES1CL R3G | Taiwan Semiconductor | Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA |
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ES1CL RQ | Taiwan Semiconductor | Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA |
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ES1CL RQG | Taiwan Semiconductor | Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA |
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ES1CL RVG | Taiwan Semiconductor | Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA T/R |
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ES1CLH | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 150V, SUPER FAST RECOV Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V Qualification: AEC-Q101 |
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ES1CLH | Taiwan Semiconductor | Rectifiers 35ns, 1A, 150V, Super Fast Recovery Rectifier |
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ES1CLHR2G | Taiwan Semiconductor | Diode Switching Automotive SMA |
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ES1CLHR3G | Taiwan Semiconductor | Diode Switching Automotive SMA |
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ES1CLHRQG | Taiwan Semiconductor | Diode Switching Automotive SMA |
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ES1CLHRVG | Taiwan Semiconductor | Diode Switching Automotive SMA |
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ES1CLHRVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V Qualification: AEC-Q101 |
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ES1CR2 | Taiwan Semiconductor | Diode Switching 150V 1A 2-Pin SMA T/R |
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ES1CWF-HF | Comchip Technology |
Description: DIODE GEN PURP 150V 1A SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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ES1CWF-HF | Comchip Technology | Rectifiers RECTIFIER SUPER FAST RECOVERY 150V 1A SOD-123FL |
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ES1CWG_R1_00001 | Panjit International Inc. |
Description: DIODE GEN PURP 150V 1A SMA Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
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ES1CWG_R1_00001 | Panjit | Rectifiers 150V,Super Fast Recovery Rectifiers,SMA(W),1A |
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ES1C_R1_00001 | Panjit | Rectifiers 150V,Super Fast Recovery Rectifiers,SMA,1A |
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ES1C_R2_00001 | Panjit | Rectifiers 150V Super Fast Recovery Rectifiers 1A |
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ES1C-A40 |
Виробник: OMRON
Category: Temp. Sensors - Resistance Thermometers
Description: Sensor: temperature; 12÷24VDC; Temp: 0÷70°C; Leads: lead x5; 2m
Leads: lead x5
Operating temperature: 0...70°C
IP rating: IP67
Supply voltage: 12...24V DC
Output configuration: analogue 4-20mA
Temperature measuring range: 0...400°C
Kind of sensor: infrared
Type of sensor: temperature
Cable length: 2m
Category: Temp. Sensors - Resistance Thermometers
Description: Sensor: temperature; 12÷24VDC; Temp: 0÷70°C; Leads: lead x5; 2m
Leads: lead x5
Operating temperature: 0...70°C
IP rating: IP67
Supply voltage: 12...24V DC
Output configuration: analogue 4-20mA
Temperature measuring range: 0...400°C
Kind of sensor: infrared
Type of sensor: temperature
Cable length: 2m
товар відсутній
ES1C-A40 |
Виробник: OMRON
Category: Temp. Sensors - Resistance Thermometers
Description: Sensor: temperature; 12÷24VDC; Temp: 0÷70°C; Leads: lead x5; 2m
Leads: lead x5
Operating temperature: 0...70°C
IP rating: IP67
Supply voltage: 12...24V DC
Output configuration: analogue 4-20mA
Temperature measuring range: 0...400°C
Kind of sensor: infrared
Type of sensor: temperature
Cable length: 2m
кількість в упаковці: 1 шт
Category: Temp. Sensors - Resistance Thermometers
Description: Sensor: temperature; 12÷24VDC; Temp: 0÷70°C; Leads: lead x5; 2m
Leads: lead x5
Operating temperature: 0...70°C
IP rating: IP67
Supply voltage: 12...24V DC
Output configuration: analogue 4-20mA
Temperature measuring range: 0...400°C
Kind of sensor: infrared
Type of sensor: temperature
Cable length: 2m
кількість в упаковці: 1 шт
товар відсутній
ES1C-E3/5AT |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Leakage current: 0.1mA
Case: DO214AC; SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Max. off-state voltage: 150V
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Leakage current: 0.1mA
Case: DO214AC; SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Max. off-state voltage: 150V
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
товар відсутній
ES1C-E3/5AT |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Leakage current: 0.1mA
Case: DO214AC; SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Max. off-state voltage: 150V
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Leakage current: 0.1mA
Case: DO214AC; SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Max. off-state voltage: 150V
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
кількість в упаковці: 5 шт
товар відсутній
ES1C-HF |
Виробник: Comchip Technology
Rectifiers RECTIFIER SUPER FAST RECOVERY 150V 1A SMA
Rectifiers RECTIFIER SUPER FAST RECOVERY 150V 1A SMA
товар відсутній
ES1C-HF |
Виробник: Comchip Technology
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
ES1C-M3/5AT |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
ES1C-M3/5AT |
Виробник: Vishay General Semiconductor
Rectifiers 1A,150V,15NS,UF Rect, SMD
Rectifiers 1A,150V,15NS,UF Rect, SMD
товар відсутній
ES1C-M3/61T |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
ES1C-M3/61T |
Виробник: Vishay General Semiconductor
Rectifiers 1A,150V,15NS,UF Rect, SMD
Rectifiers 1A,150V,15NS,UF Rect, SMD
товар відсутній
ES1CE-TP |
Виробник: Micro Commercial Components
Rectifier Diode Switching 150V 1A 50ns 2-Pin SMAE T/R
Rectifier Diode Switching 150V 1A 50ns 2-Pin SMAE T/R
товар відсутній
ES1CE-TP |
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMAE)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMAE)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
ES1CH |
Виробник: Taiwan Semiconductor
Rectifiers 35ns, 1A, 150V, Super Fast Recovery Rectifier
Rectifiers 35ns, 1A, 150V, Super Fast Recovery Rectifier
товар відсутній
ES1CHE3/5AT |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
ES1CHE3/61T |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
ES1CHE3/61T |
Виробник: Vishay
Rectifier Diode Switching 150V 1A 15ns Automotive 2-Pin SMA T/R
Rectifier Diode Switching 150V 1A 15ns Automotive 2-Pin SMA T/R
товар відсутній
ES1CHE3_A/H |
Виробник: Vishay
Diode Switching 150V 1A Automotive AEC-Q101 2-Pin SMA T/R
Diode Switching 150V 1A Automotive AEC-Q101 2-Pin SMA T/R
товар відсутній
ES1CHE3_A/H |
Виробник: Vishay
Rectifier Diode Switching 150V 1A 15ns Automotive 2-Pin SMA T/R
Rectifier Diode Switching 150V 1A 15ns Automotive 2-Pin SMA T/R
товар відсутній
ES1CHE3_A/H |
Виробник: Vishay
Diode Switching 150V 1A Automotive AEC-Q101 2-Pin SMA T/R
Diode Switching 150V 1A Automotive AEC-Q101 2-Pin SMA T/R
товар відсутній
ES1CHE3_A/I |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
ES1CHE3_A/I |
Виробник: Vishay
Diode Switching 150V 1A Automotive AEC-Q101 2-Pin SMA T/R
Diode Switching 150V 1A Automotive AEC-Q101 2-Pin SMA T/R
товар відсутній
ES1CHE3_A/I |
Виробник: Vishay
Rectifier Diode Switching 150V 1A 15ns Automotive 2-Pin SMA T/R
Rectifier Diode Switching 150V 1A 15ns Automotive 2-Pin SMA T/R
товар відсутній
ES1CHE3_A/I |
Виробник: Vishay
Diode Switching 150V 1A Automotive AEC-Q101 2-Pin SMA T/R
Diode Switching 150V 1A Automotive AEC-Q101 2-Pin SMA T/R
товар відсутній
ES1CHM2G |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 150V 1A 35ns Automotive 2-Pin SMA T/R
Rectifier Diode Switching 150V 1A 35ns Automotive 2-Pin SMA T/R
товар відсутній
ES1CHR3G |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 150V 1A 35ns Automotive 2-Pin SMA T/R
Rectifier Diode Switching 150V 1A 35ns Automotive 2-Pin SMA T/R
товар відсутній
ES1CL |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 150V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: 35NS, 1A, 150V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
ES1CL |
Виробник: Taiwan Semiconductor
Rectifiers 35ns, 1A, 150V, Super Fast Recovery Rectifier
Rectifiers 35ns, 1A, 150V, Super Fast Recovery Rectifier
товар відсутній
ES1CL R2 |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA T/R
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA T/R
товар відсутній
ES1CL R2 |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA T/R
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA T/R
товар відсутній
ES1CL R2G |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA
товар відсутній
ES1CL R3 |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA
товар відсутній
ES1CL R3G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
ES1CL R3G |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA
товар відсутній
ES1CL RQ |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA
товар відсутній
ES1CL RQG |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA
товар відсутній
ES1CL RVG |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA T/R
Rectifier Diode Switching 150V 1A 35ns 2-Pin Sub SMA T/R
товар відсутній
ES1CLH |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 150V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
Description: 35NS, 1A, 150V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
ES1CLH |
Виробник: Taiwan Semiconductor
Rectifiers 35ns, 1A, 150V, Super Fast Recovery Rectifier
Rectifiers 35ns, 1A, 150V, Super Fast Recovery Rectifier
товар відсутній
ES1CLHRVG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 150V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
ES1CWF-HF |
Виробник: Comchip Technology
Description: DIODE GEN PURP 150V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
ES1CWF-HF |
Виробник: Comchip Technology
Rectifiers RECTIFIER SUPER FAST RECOVERY 150V 1A SOD-123FL
Rectifiers RECTIFIER SUPER FAST RECOVERY 150V 1A SOD-123FL
товар відсутній
ES1CWG_R1_00001 |
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 150V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE GEN PURP 150V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
товар відсутній
ES1CWG_R1_00001 |
Виробник: Panjit
Rectifiers 150V,Super Fast Recovery Rectifiers,SMA(W),1A
Rectifiers 150V,Super Fast Recovery Rectifiers,SMA(W),1A
товар відсутній