Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (129411) > Сторінка 115 з 2157
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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STP08CL596M | STMicroelectronics |
Description: IC LED DRIVER LINEAR 90MA 16SOPart Status: Obsolete Voltage - Supply (Max): 3.6V Voltage - Supply (Min): 3V Supplier Device Package: 16-SO Topology: Shift Register Internal Switch(s): Yes Current - Output / Channel: 90mA Operating Temperature: -40°C ~ 125°C (TA) Type: Linear Frequency: 25MHz Number of Outputs: 8 Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tube Mounting Type: Surface Mount Voltage - Output: 16V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP100NF04 | STMicroelectronics |
Description: MOSFET N-CH 40V 120A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 453 шт: термін постачання 21-31 дні (днів) |
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STP10NK60ZFP | STMicroelectronics |
Description: MOSFET N-CH 600V 10A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
на замовлення 331 шт: термін постачання 21-31 дні (днів) |
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STP10NK70Z | STMicroelectronics |
Description: MOSFET N-CH 700V 8.6A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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STP10NK80Z | STMicroelectronics |
Description: MOSFET N-CH 800V 9A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP11NK40Z | STMicroelectronics |
Description: MOSFET N-CH 400V 9A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V |
на замовлення 785 шт: термін постачання 21-31 дні (днів) |
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STP11NK50Z | STMicroelectronics |
Description: MOSFET N-CH 500V 10A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 241 шт: термін постачання 21-31 дні (днів) |
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STP11NM60FDFP | STMicroelectronics |
Description: MOSFET N-CH 600V 11A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP120NF04 | STMicroelectronics |
Description: MOSFET N-CH 40V 120A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP12NK30Z | STMicroelectronics |
Description: MOSFET N-CH 300V 9A TO220ABPackaging: Tube Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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STP12NK80Z | STMicroelectronics |
Description: MOSFET N-CH 800V 10.5A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.25A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 2523 шт: термін постачання 21-31 дні (днів) |
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STP12NM50FD | STMicroelectronics |
Description: MOSFET N-CH 500V 12A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP140NF75 | STMicroelectronics |
Description: MOSFET N-CH 75V 120A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 70A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V |
на замовлення 462 шт: термін постачання 21-31 дні (днів) |
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STP14NF10 | STMicroelectronics |
Description: MOSFET N-CH 100V 15A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP14NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 13.5A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP15NK50ZFP | STMicroelectronics |
Description: MOSFET N-CH 500V 14A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP16CP596B1R | STMicroelectronics |
Description: IC LED DRIVER LINEAR 50MA 24DIPVoltage - Supply (Max): 5.5V Voltage - Supply (Min): 3V Supplier Device Package: 24-DIP Topology: Shift Register Internal Switch(s): Yes Current - Output / Channel: 50mA Operating Temperature: -40°C ~ 125°C (TA) Type: Linear Frequency: 25MHz Number of Outputs: 16 Mounting Type: Through Hole Voltage - Output: 16V Package / Case: 24-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP16CP596MTR | STMicroelectronics |
Description: IC LED DRIVER LINEAR 50MA 24SOVoltage - Supply (Max): 5.5V Voltage - Supply (Min): 3V Supplier Device Package: 24-SO Topology: Shift Register Internal Switch(s): Yes Current - Output / Channel: 50mA Operating Temperature: -40°C ~ 125°C (TA) Type: Linear Frequency: 25MHz Number of Outputs: 16 Mounting Type: Surface Mount Voltage - Output: 16V Package / Case: 24-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP16CP596TTR | STMicroelectronics |
Description: IC LED DRVR LINEAR 50MA 24TSSOPVoltage - Supply (Min): 3V Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply (Max): 5.5V Type: Linear Supplier Device Package: 24-TSSOP Topology: Shift Register Frequency: 25MHz Internal Switch(s): Yes Number of Outputs: 16 Mounting Type: Surface Mount Current - Output / Channel: 50mA Voltage - Output: 16V Package / Case: 24-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP16CP596XTTR | STMicroelectronics |
Description: IC LED DRVR LINEAR 50MA 24TSSOPVoltage - Supply (Max): 5.5V Voltage - Supply (Min): 3V Supplier Device Package: 24-TSSOP-EP Topology: Shift Register Internal Switch(s): Yes Current - Output / Channel: 50mA Operating Temperature: -40°C ~ 125°C (TA) Type: Linear Frequency: 25MHz Number of Outputs: 16 Mounting Type: Surface Mount Voltage - Output: 16V Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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STP16NF06FP | STMicroelectronics |
Description: MOSFET N-CH 60V 11A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP16NS25FP | STMicroelectronics |
Description: MOSFET N-CH 250V 16A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP17NK40Z | STMicroelectronics |
Description: MOSFET N-CH 400V 15A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP200NF03 | STMicroelectronics |
Description: MOSFET N-CH 30V 120A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V |
на замовлення 952 шт: термін постачання 21-31 дні (днів) |
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STP20NM50FD | STMicroelectronics |
Description: MOSFET N-CH 500V 20A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP20NM50FP | STMicroelectronics |
Description: MOSFET N-CH 550V 20A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP20NM60FD | STMicroelectronics |
Description: MOSFET N-CH 600V 20A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
на замовлення 365 шт: термін постачання 21-31 дні (днів) |
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STP22NF03L | STMicroelectronics |
Description: MOSFET N-CH 30V 22A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP22NS25Z | STMicroelectronics |
Description: MOSFET N-CH 250V 22A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP30NF10 | STMicroelectronics |
Description: MOSFET N-CH 100V 35A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP36NF06L | STMicroelectronics |
Description: MOSFET N-CH 60V 30A TO220ABPart Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
на замовлення 3890 шт: термін постачання 21-31 дні (днів) |
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STP3HNK90Z | STMicroelectronics |
Description: MOSFET N-CH 800V 3A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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STP3NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 2.4A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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STP3NK90Z | STMicroelectronics |
Description: MOSFET N-CH 900V 3A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 22.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V |
на замовлення 904 шт: термін постачання 21-31 дні (днів) |
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STP40NF10L | STMicroelectronics |
Description: MOSFET N-CH 100V 40A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±17V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V |
на замовлення 348 шт: термін постачання 21-31 дні (днів) |
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STP45NF3LL | STMicroelectronics |
Description: MOSFET N-CH 30V 45A TO220ABPackage / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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STP55NF06L | STMicroelectronics |
Description: MOSFET N-CH 60V 55A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 27.5A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 1.7V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
на замовлення 1671 шт: термін постачання 21-31 дні (днів) |
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STP5NK80Z | STMicroelectronics |
Description: MOSFET N-CH 800V 4.3A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.15A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V |
на замовлення 1278 шт: термін постачання 21-31 дні (днів) |
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STP60NE06L-16 | STMicroelectronics |
Description: MOSFET N-CH 60V 60A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP60NF03L | STMicroelectronics |
Description: MOSFET N-CH 30V 60A TO220ABOperating Temperature: 175°C (TJ) Mounting Type: Through Hole Packaging: Tube Package / Case: TO-220-3 Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP60NF06L | STMicroelectronics |
Description: MOSFET N-CH 60V 60A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
на замовлення 982 шт: термін постачання 21-31 дні (днів) |
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| stp62ns04z | STMicroelectronics |
Description: MOSFET N-CH 33V 62A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): Clamped Drain to Source Voltage (Vdss): 33 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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STP6NK70Z | STMicroelectronics |
Description: MOSFET N-CH 700V 5A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP70NF03L | STMicroelectronics |
Description: MOSFET N-CH 30V 70A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 35A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP7NK30Z | STMicroelectronics |
Description: MOSFET N-CH 300V 5A TO220ABTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Mounting Type: Through Hole Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 50W (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP7NK80Z | STMicroelectronics |
Description: MOSFET N-CH 800V 5.2A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V |
на замовлення 866 шт: термін постачання 21-31 дні (днів) |
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STP80NE03L-06 | STMicroelectronics |
Description: MOSFET N-CH 30V 80A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±22V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP80NF10FP | STMicroelectronics |
Description: MOSFET N-CH 100V 38A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 1030 шт: термін постачання 21-31 дні (днів) |
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STP80NF12 | STMicroelectronics |
Description: MOSFET N-CH 120V 80A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 556 шт: термін постачання 21-31 дні (днів) |
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STP80NF55L-06 | STMicroelectronics |
Description: MOSFET N-CH 55V 80A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP85NF55 | STMicroelectronics |
Description: MOSFET N-CH 55V 80A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP8NK80Z | STMicroelectronics |
Description: MOSFET N-CH 800V 6.2A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V |
на замовлення 792 шт: термін постачання 21-31 дні (днів) |
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STP8NK85Z | STMicroelectronics |
Description: MOSFET N-CH 850V 6.7A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 850 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.35A, 10V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP8NM50 | STMicroelectronics |
Description: MOSFET N-CH 550V 8A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 550 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP8NM50FP | STMicroelectronics |
Description: MOSFET N-CH 550V 8A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 550 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP8NM60 | STMicroelectronics |
Description: MOSFET N-CH 650V 8A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP8NM60FP | STMicroelectronics |
Description: MOSFET N-CH 650V 8A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP8NS25 | STMicroelectronics |
Description: MOSFET N-CH 250V 8A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 51.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STP90NF03L | STMicroelectronics |
Description: MOSFET N-CH 30V 90A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 45A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
на замовлення 736 шт: термін постачання 21-31 дні (днів) |
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STP9NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 7A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V |
на замовлення 853 шт: термін постачання 21-31 дні (днів) |
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| STP08CL596M |
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Виробник: STMicroelectronics
Description: IC LED DRIVER LINEAR 90MA 16SO
Part Status: Obsolete
Voltage - Supply (Max): 3.6V
Voltage - Supply (Min): 3V
Supplier Device Package: 16-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 90mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 8
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Mounting Type: Surface Mount
Voltage - Output: 16V
Description: IC LED DRIVER LINEAR 90MA 16SO
Part Status: Obsolete
Voltage - Supply (Max): 3.6V
Voltage - Supply (Min): 3V
Supplier Device Package: 16-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 90mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 8
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Mounting Type: Surface Mount
Voltage - Output: 16V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP100NF04 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 453 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 239.69 грн |
| 50+ | 115.63 грн |
| 100+ | 104.44 грн |
| STP10NK60ZFP |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
на замовлення 331 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 311.59 грн |
| 50+ | 153.96 грн |
| 100+ | 139.79 грн |
| STP10NK70Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 700V 8.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 700V 8.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 317.00 грн |
| 50+ | 156.95 грн |
| 100+ | 142.60 грн |
| STP10NK80Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Description: MOSFET N-CH 800V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
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| STP11NK40Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Description: MOSFET N-CH 400V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
на замовлення 785 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 180.15 грн |
| 50+ | 85.61 грн |
| 100+ | 77.08 грн |
| 500+ | 58.28 грн |
| STP11NK50Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 500V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 264.43 грн |
| 50+ | 129.58 грн |
| 100+ | 117.45 грн |
| STP11NM60FDFP |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 11A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| STP120NF04 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| STP12NK30Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 300V 9A TO220AB
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 300V 9A TO220AB
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 193.30 грн |
| 50+ | 100.96 грн |
| 100+ | 92.14 грн |
| 500+ | 71.73 грн |
| 1000+ | 66.96 грн |
| STP12NK80Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 10.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 800V 10.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 2523 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 341.75 грн |
| 50+ | 169.99 грн |
| 100+ | 154.60 грн |
| 500+ | 119.80 грн |
| 1000+ | 111.68 грн |
| 2000+ | 104.86 грн |
| STP12NM50FD |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
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Мінімальне замовлення: 1000 шт
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| STP140NF75 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 70A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 70A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 283.76 грн |
| 50+ | 140.29 грн |
| 100+ | 127.40 грн |
| STP14NF10 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 15A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 15A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| STP14NK60Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Description: MOSFET N-CH 600V 13.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| STP15NK50ZFP |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
Description: MOSFET N-CH 500V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
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Мінімальне замовлення: 1000 шт
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| STP16CP596B1R |
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Виробник: STMicroelectronics
Description: IC LED DRIVER LINEAR 50MA 24DIP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-DIP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 16
Mounting Type: Through Hole
Voltage - Output: 16V
Package / Case: 24-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC LED DRIVER LINEAR 50MA 24DIP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-DIP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 16
Mounting Type: Through Hole
Voltage - Output: 16V
Package / Case: 24-DIP (0.300", 7.62mm)
Packaging: Tube
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| STP16CP596MTR |
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Виробник: STMicroelectronics
Description: IC LED DRIVER LINEAR 50MA 24SO
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 16
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: IC LED DRIVER LINEAR 50MA 24SO
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 16
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1000 шт
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| STP16CP596TTR |
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Виробник: STMicroelectronics
Description: IC LED DRVR LINEAR 50MA 24TSSOP
Voltage - Supply (Min): 3V
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply (Max): 5.5V
Type: Linear
Supplier Device Package: 24-TSSOP
Topology: Shift Register
Frequency: 25MHz
Internal Switch(s): Yes
Number of Outputs: 16
Mounting Type: Surface Mount
Current - Output / Channel: 50mA
Voltage - Output: 16V
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC LED DRVR LINEAR 50MA 24TSSOP
Voltage - Supply (Min): 3V
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply (Max): 5.5V
Type: Linear
Supplier Device Package: 24-TSSOP
Topology: Shift Register
Frequency: 25MHz
Internal Switch(s): Yes
Number of Outputs: 16
Mounting Type: Surface Mount
Current - Output / Channel: 50mA
Voltage - Output: 16V
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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| STP16CP596XTTR |
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Виробник: STMicroelectronics
Description: IC LED DRVR LINEAR 50MA 24TSSOP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-TSSOP-EP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 16
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC LED DRVR LINEAR 50MA 24TSSOP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-TSSOP-EP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 16
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| STP16NF06FP |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Description: MOSFET N-CH 60V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
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| STP16NS25FP |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Description: MOSFET N-CH 250V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
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Мінімальне замовлення: 1000 шт
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| STP17NK40Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 15A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 400V 15A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| STP200NF03 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Description: MOSFET N-CH 30V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
на замовлення 952 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.12 грн |
| 50+ | 97.95 грн |
| 100+ | 88.39 грн |
| 500+ | 67.23 грн |
| STP20NM50FD |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
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| STP20NM50FP |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 550V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Description: MOSFET N-CH 550V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP20NM60FD |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 365 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 589.94 грн |
| 50+ | 309.17 грн |
| 100+ | 284.16 грн |
| STP22NF03L |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 22A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 30V 22A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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В кошику
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| STP22NS25Z |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET N-CH 250V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP30NF10 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 35A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 35A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| STP36NF06L |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 30A TO220AB
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Description: MOSFET N-CH 60V 30A TO220AB
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
на замовлення 3890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 182.47 грн |
| 50+ | 86.14 грн |
| 100+ | 77.42 грн |
| 500+ | 58.30 грн |
| 1000+ | 53.69 грн |
| 2000+ | 49.81 грн |
| STP3HNK90Z |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 3A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 800V 3A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| STP3NK60Z |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 2.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
Description: MOSFET N-CH 600V 2.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 156.96 грн |
| 50+ | 73.28 грн |
| 100+ | 65.70 грн |
| 500+ | 49.19 грн |
| 1000+ | 45.18 грн |
| STP3NK90Z |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 900V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 22.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
Description: MOSFET N-CH 900V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 22.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
на замовлення 904 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 198.71 грн |
| 50+ | 94.42 грн |
| 100+ | 85.05 грн |
| 500+ | 64.38 грн |
| STP40NF10L |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±17V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Description: MOSFET N-CH 100V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±17V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 228.09 грн |
| 50+ | 109.84 грн |
| 100+ | 99.13 грн |
| STP45NF3LL |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 45A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 30V 45A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| STP55NF06L |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 55A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 27.5A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 60V 55A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 27.5A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 1671 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.84 грн |
| 50+ | 92.53 грн |
| 100+ | 83.28 грн |
| 500+ | 62.91 грн |
| 1000+ | 58.00 грн |
| STP5NK80Z |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 4.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.15A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Description: MOSFET N-CH 800V 4.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.15A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
на замовлення 1278 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.58 грн |
| 50+ | 105.16 грн |
| 100+ | 94.85 грн |
| 500+ | 72.03 грн |
| 1000+ | 66.57 грн |
| STP60NE06L-16 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 60A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 60A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Мінімальне замовлення: 1000 шт
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| STP60NF03L |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 60A TO220AB
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 30V 60A TO220AB
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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| STP60NF06L |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 982 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.45 грн |
| 50+ | 107.14 грн |
| 100+ | 96.66 грн |
| 500+ | 73.46 грн |
| stp62ns04z |
Виробник: STMicroelectronics
Description: MOSFET N-CH 33V 62A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): Clamped
Drain to Source Voltage (Vdss): 33 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V
Description: MOSFET N-CH 33V 62A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): Clamped
Drain to Source Voltage (Vdss): 33 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V
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| STP6NK70Z |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 700V 5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 700V 5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Мінімальне замовлення: 1000 шт
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| STP70NF03L |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 70A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 35A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Description: MOSFET N-CH 30V 70A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 35A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
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| STP7NK30Z |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 300V 5A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 50W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 300V 5A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 50W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Package / Case: TO-220-3
Packaging: Tube
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| STP7NK80Z |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
Description: MOSFET N-CH 800V 5.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
на замовлення 866 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 268.29 грн |
| 50+ | 131.00 грн |
| 100+ | 118.67 грн |
| 500+ | 91.07 грн |
| STP80NE03L-06 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 30V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| STP80NF10FP |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 38A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 100V 38A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 1030 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.13 грн |
| 50+ | 105.80 грн |
| 100+ | 95.42 грн |
| 500+ | 72.49 грн |
| 1000+ | 67.00 грн |
| STP80NF12 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 120V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 120V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 556 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.57 грн |
| 50+ | 96.42 грн |
| 100+ | 86.82 грн |
| 500+ | 65.69 грн |
| STP80NF55L-06 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Description: MOSFET N-CH 55V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
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| STP85NF55 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 55V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| STP8NK80Z |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 6.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Description: MOSFET N-CH 800V 6.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
на замовлення 792 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 288.40 грн |
| 50+ | 142.39 грн |
| 100+ | 129.29 грн |
| 500+ | 99.81 грн |
| STP8NK85Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 850V 6.7A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 850V 6.7A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP8NM50 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 550V 8A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 550V 8A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP8NM50FP |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 550V 8A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 550V 8A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP8NM60 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 8A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 650V 8A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP8NM60FP |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 8A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 650V 8A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP8NS25 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 51.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Description: MOSFET N-CH 250V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 51.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP90NF03L |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 45A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 45A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
на замовлення 736 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 176.29 грн |
| 50+ | 82.84 грн |
| 100+ | 74.41 грн |
| 500+ | 55.94 грн |
| STP9NK60Z |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
на замовлення 853 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 247.42 грн |
| 50+ | 120.08 грн |
| 100+ | 108.59 грн |
| 500+ | 83.01 грн |










