Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (129402) > Сторінка 144 з 2157
| Фото | Назва | Виробник | Інформація |
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STB13007DT4 | STMicroelectronics |
 Description: TRANS NPN 400V 8A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V Supplier Device Package: D2PAK Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
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STB45NF06 | STMicroelectronics |
Description: MOSFET N-CH 60V 38A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
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STB85NF55LT4 | STMicroelectronics |
Description: MOSFET N-CH 55V 80A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1736 шт: термін постачання 21-31 дні (днів) |
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STD11NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 10A DPAK Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V |
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STGB10NC60KDT4 | STMicroelectronics |
Description: IGBT 600V 20A 65W D2PAK Power - Max: 65 W Current - Collector Pulsed (Icm): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Part Status: Active Gate Charge: 19 nC Test Condition: 390V, 5A, 10Ohm, 15V Switching Energy: 55µJ (on), 85µJ (off) Td (on/off) @ 25°C: 17ns/72ns Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A Reverse Recovery Time (trr): 22 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 266 шт: термін постачання 21-31 дні (днів) |
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| STGD14NC60KT4 | STMicroelectronics |
Description: IGBT 600V 25A 80W DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A Supplier Device Package: DPAK Td (on/off) @ 25°C: 22.5ns/116ns Switching Energy: 82µJ (on), 155µJ (off) Test Condition: 390V, 7A, 10Ohm, 15V Gate Charge: 34.4 nC Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 80 W |
на замовлення 1256 шт: термін постачання 21-31 дні (днів) |
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STP16CP05MTR | STMicroelectronics |
 Description: IC LED DRIVER LINEAR 100MA 24SOPart Status: Active Voltage - Supply (Max): 5.5V Voltage - Supply (Min): 3V Supplier Device Package: 24-SO Topology: Shift Register Internal Switch(s): Yes Current - Output / Channel: 100mA Operating Temperature: -40°C ~ 125°C (TA) Type: Linear Frequency: 30MHz Number of Outputs: 16 Mounting Type: Surface Mount Voltage - Output: 20V Package / Case: 24-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
на замовлення 10059 шт: термін постачання 21-31 дні (днів) |
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STP16CP05TTR | STMicroelectronics |
Description: IC LED DRVR LINEAR 100MA 24TSSOP Packaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.173", 4.40mm Width) Voltage - Output: 20V Mounting Type: Surface Mount Number of Outputs: 16 Frequency: 30MHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 100mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 24-TSSOP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Active |
на замовлення 5038 шт: термін постачання 21-31 дні (днів) |
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STP16CP05XTTR | STMicroelectronics |
Description: IC LED DRVR LINEAR 100MA 24TSSOP Packaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad Voltage - Output: 20V Mounting Type: Surface Mount Number of Outputs: 16 Frequency: 30MHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 100mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 24-TSSOP-EP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Active |
на замовлення 4262 шт: термін постачання 21-31 дні (днів) |
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STP16CPS05MTR | STMicroelectronics |
Description: IC LED DRIVER LINEAR 100MA 24SOP Packaging: Cut Tape (CT) Package / Case: 24-SOIC (0.295", 7.50mm Width) Voltage - Output: 20V Mounting Type: Surface Mount Number of Outputs: 16 Frequency: 30MHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 100mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 24-SOP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Active |
на замовлення 1053 шт: термін постачання 21-31 дні (днів) |
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STP16CPS05XTTR | STMicroelectronics |
Description: IC LED DRVR LINEAR 100MA 24TSSOP Packaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad Voltage - Output: 20V Mounting Type: Surface Mount Number of Outputs: 16 Frequency: 30MHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 100mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 24-TSSOP-EP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Active |
на замовлення 6755 шт: термін постачання 21-31 дні (днів) |
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STS17NH3LL | STMicroelectronics |
Description: MOSFET N-CH 30V 17A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.7W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
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STTH2002G-TR | STMicroelectronics |
Description: DIODE STANDARD 200V 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 1803 шт: термін постачання 21-31 дні (днів) |
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STTH212U | STMicroelectronics |
Description: DIODE STANDARD 1200V 2A SMB Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SMB Current - Average Rectified (Io): 2A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
на замовлення 24356 шт: термін постачання 21-31 дні (днів) |
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STTH312B-TR | STMicroelectronics |
Description: DIODE GEN PURP 1.2KV 3A DPAK Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 3 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DPAK Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 115 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
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STTH3R02QRL | STMicroelectronics |
Description: DIODE STANDARD 200V 3A DO15 Current - Reverse Leakage @ Vr: 3 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-15 Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Cut Tape (CT) |
на замовлення 20480 шт: термін постачання 21-31 дні (днів) |
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STTH4R02S | STMicroelectronics |
Description: DIODE STANDARD 200V 4A SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: SMC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
на замовлення 28833 шт: термін постачання 21-31 дні (днів) |
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STTH512B-TR | STMicroelectronics |
Description: DIODE STANDARD 1200V 5A DPAK Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DPAK Current - Average Rectified (Io): 5A Technology: Standard Reverse Recovery Time (trr): 95 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 7936 шт: термін постачання 21-31 дні (днів) |
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TDE1708DFT | STMicroelectronics |
Description: IC PWR SWITCH BIPOLAR 1:2 8DFN Voltage - Load: 6V ~ 48V Input Type: Non-Inverting Output Configuration: High Side or Low Side Operating Temperature: -25°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 2 Mounting Type: Surface Mount Output Type: Bipolar Package / Case: 8-VDFN Exposed Pad Features: 5V Regulated Output Packaging: Cut Tape (CT) Fault Protection: Over Temperature, Reverse Current Supplier Device Package: 8-DFN (4x4) Ratio - Input:Output: 1:2 Current - Output (Max): 250mA Voltage - Supply (Vcc/Vdd): Not Required |
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TS3022IDT | STMicroelectronics |
Description: IC COMPARATOR 2 GEN PUR 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 1.8V ~ 5V Supplier Device Package: 8-SOIC Propagation Delay (Max): 105ns Current - Quiescent (Max): 90µA Voltage - Input Offset (Max): 8mV @ 5V Current - Input Bias (Max): 0.16µA @ 5V CMRR, PSRR (Typ): 79dB CMRR Part Status: Active |
на замовлення 11559 шт: термін постачання 21-31 дні (днів) |
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TSV912IST | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8MINISO Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Packaging: Cut Tape (CT) Current - Output / Channel: 35 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-MiniSO Voltage - Input Offset: 4.5 mV Current - Input Bias: 1 pA Gain Bandwidth Product: 8 MHz Slew Rate: 4.5V/µs Current - Supply: 780µA (x2 Channels) Operating Temperature: -40°C ~ 125°C Amplifier Type: Standard (General Purpose) Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
на замовлення 8928 шт: термін постачання 21-31 дні (днів) |
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VIPER53ESPTR-E | STMicroelectronics |
Description: IC OFFLINE SW FLBACK 10POWERSO Packaging: Cut Tape (CT) Package / Case: PowerSO-10 Exposed Bottom Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TC) Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 620V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V Supplier Device Package: 10-PowerSO Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit Voltage - Start Up: 11.5 V Control Features: EN, Frequency Control, Soft Start Part Status: Active Power (Watts): 65 W |
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VN540SPTR-E | STMicroelectronics |
Description: IC PWR DRIVER 1:1 PWRSO10 Packaging: Cut Tape (CT) Features: Status Flag Package / Case: PowerSO-10 Exposed Bottom Pad Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -25°C ~ 85°C (TJ) Output Configuration: High Side Rds On (Typ): 50mOhm (Max) Input Type: Non-Inverting Voltage - Load: 10V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.8A Ratio - Input:Output: 1:1 Supplier Device Package: 10-PowerSO Fault Protection: Current Limiting (Fixed), Over Temperature Part Status: Active |
на замовлення 786 шт: термін постачання 21-31 дні (днів) |
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74LVC04ATTR | STMicroelectronics |
Description: IC INVERTER 6CH 1-INP 14TSSOP Current - Quiescent (Max): 10 µA Number of Circuits: 6 Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 50pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.7V ~ 2V Supplier Device Package: 14-TSSOP Number of Inputs: 1 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -55°C ~ 125°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
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ESDA6V1-5M6 | STMicroelectronics |
Description: TVS DIODE 3VWM 6UQFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 70pF @ 1MHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: 6-µQFN (1.45x1.0) Unidirectional Channels: 5 Voltage - Breakdown (Min): 6.1V Power - Peak Pulse: 100W Power Line Protection: No Part Status: Active |
на замовлення 994 шт: термін постачання 21-31 дні (днів) |
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ESDALC6V1-5M6 | STMicroelectronics |
Description: TVS DIODE 3VWM 6UQFN Part Status: Active Power Line Protection: No Power - Peak Pulse: 30W Voltage - Breakdown (Min): 6.1V Voltage - Reverse Standoff (Typ): 3V Capacitance @ Frequency: 12pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 6-UFDFN Packaging: Cut Tape (CT) Unidirectional Channels: 5 Supplier Device Package: 6-µQFN (1.45x1.0) |
на замовлення 22050 шт: термін постачання 21-31 дні (днів) |
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STSJ100NH3LL | STMicroelectronics |
Description: MOSFET N-CH 30V 100A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC-EP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 3W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 12.5A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
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TSM103IDT | STMicroelectronics |
Description: IC AMPLIFIER 8SO |
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BAS70FILM | STMicroelectronics |
Description: DIODE SCHOTTKY 70V 70MA SOT23-3 |
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BD679 | STMicroelectronics |
Description: TRANS NPN DARL 80V 4A SOT-32-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Supplier Device Package: SOT-32-3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
на замовлення 76 шт: термін постачання 21-31 дні (днів) |
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Q3108517 | STMicroelectronics |
Description: KIT ESD PROTECT DIO 15 VALUE 5EA Part Status: Obsolete Voltage - Breakdown: 6V ~ 12V Kit Type: ESD Protection Quantity: 75 Pieces (15 Values - 5 Each) Mounting Type: Surface Mount Packaging: Bulk |
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| Q3067543 | STMicroelectronics | Description: KIT DIODES 18VALUES 5 EACH |
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,TO-226_straightlead.jpg "2STX2220") |
2STX2220 | STMicroelectronics |
Description: TRANS PNP 20V 1.5A TO-92 |
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BUL704 | STMicroelectronics |
Description: TRANS NPN 400V 4A TO-220 |
на замовлення 2871 шт: термін постачання 21-31 дні (днів) |
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STC04IE170HP | STMicroelectronics |
Description: TRANS ESBT 1700V 4A TO247-4LHP Supplier Device Package: TO-247-4L Applications: Gate Driver Transistor Type: NPN - Emitter Switched Bipolar Mounting Type: Through Hole Current Rating (Amps): 4A Package / Case: TO-247-4 Voltage - Rated: 1700V (1.7kV) Packaging: Tube |
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STF11NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 10A TO220FP Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
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STGP30NC60W | STMicroelectronics |
Description: IGBT 600V 60A TO-220 Power - Max: 200 W Current - Collector Pulsed (Icm): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 60 A Gate Charge: 102 nC Test Condition: 390V, 20A, 10Ohm, 15V Switching Energy: 305µJ (on), 181µJ (off) Td (on/off) @ 25°C: 29.5ns/118ns Supplier Device Package: TO-220 Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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STP11NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 10A TO220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STP16CP05B1R | STMicroelectronics |
Description: IC LED DRIVER LINEAR 100MA 24DIP Part Status: Obsolete Voltage - Supply (Max): 5.5V Voltage - Supply (Min): 3V Supplier Device Package: 24-DIP Topology: Shift Register Internal Switch(s): Yes Current - Output / Channel: 100mA Operating Temperature: -40°C ~ 125°C (TA) Type: Linear Frequency: 30MHz Number of Outputs: 16 Mounting Type: Through Hole Voltage - Output: 20V Package / Case: 24-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STP16CPS05B1R | STMicroelectronics |
Description: IC LED DRIVER LINEAR 100MA 24DIP Voltage - Supply (Max): 5.5V Voltage - Supply (Min): 3V Supplier Device Package: 24-DIP Topology: Shift Register Internal Switch(s): Yes Current - Output / Channel: 100mA Operating Temperature: -40°C ~ 125°C (TA) Type: Linear Frequency: 30MHz Number of Outputs: 16 Mounting Type: Through Hole Voltage - Output: 20V Package / Case: 24-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STP65NF06 | STMicroelectronics |
Description: MOSFET N-CH 60V 60A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS10150CFP | STMicroelectronics |
Description: DIODE ARR SCHOTT 150V 5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220FP Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A Current - Reverse Leakage @ Vr: 2 µA @ 150 V |
на замовлення 1403 шт: термін постачання 21-31 дні (днів) |
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STPS10H100CFP | STMicroelectronics |
Description: DIODE ARR SCHOTT 100V 5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220FP Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V |
на замовлення 2997 шт: термін постачання 21-31 дні (днів) |
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STPS20S100CFP | STMicroelectronics |
Description: DIODE ARR SCHOT 100V 10A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FP Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V |
на замовлення 965 шт: термін постачання 21-31 дні (днів) |
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STTH12012TV1 | STMicroelectronics |
Description: DIODE MODULE GP 1200V 60A ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 125 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: ISOTOP® Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 60 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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STTH12012TV2 | STMicroelectronics |
Description: DIODE MODULE GP 1200V 60A ISOTOP Current - Reverse Leakage @ Vr: 30 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1200 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 125 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH1210FP | STMicroelectronics |
Description: DIODE GEN PURP 1KV 12A TO220FPAC Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Obsolete Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220FPAC Current - Average Rectified (Io): 12A Technology: Standard Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH212 | STMicroelectronics |
Description: DIODE STANDARD 1200V 2A DO201AD Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-201AD Current - Average Rectified (Io): 2A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH212RL | STMicroelectronics |
Description: DIODE STANDARD 1200V 2A DO201AD Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-201AD Current - Average Rectified (Io): 2A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH3002W | STMicroelectronics |
Description: DIODE STANDARD 200V 30A DO247 Current - Reverse Leakage @ Vr: 20 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-247 Current - Average Rectified (Io): 30A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-247-2 (Straight Leads) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH3010PI | STMicroelectronics |
Description: DIODE STANDARD 1000V 30A DOP3I Packaging: Tube Package / Case: DOP3I-2 Insulated (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: DOP3I Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 1000 V |
на замовлення 796 шт: термін постачання 21-31 дні (днів) |
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STTH6006TV1 | STMicroelectronics |
Description: DIODE MODULE GP 600V 30A ISOTOP Current - Reverse Leakage @ Vr: 25 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 70 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Tube |
на замовлення 89 шт: термін постачання 21-31 дні (днів) |
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STTH6110TV2 | STMicroelectronics |
Description: DIODE MODULE GP 1000V 30A ISOTOP Current - Reverse Leakage @ Vr: 15 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 100 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Tube |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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STTH6112TV1 | STMicroelectronics |
Description: DIODE MODULE GP 1200V 30A ISOTOP Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 115 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH6112TV2 | STMicroelectronics |
Description: DIODE MODULE GP 1200V 30A ISOTOP Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 115 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH806DIRG | STMicroelectronics |
Description: DIODE STD 600V 8A TO220AC INS Packaging: Tube Package / Case: TO-220-2 Insulated, TO-220AC Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC ins Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A Current - Reverse Leakage @ Vr: 8 µA @ 600 V |
на замовлення 204 шт: термін постачання 21-31 дні (днів) |
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STTH810FP | STMicroelectronics |
Description: DIODE STD 1000V 8A TO220FPAC Supplier Device Package: TO-220FPAC Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 85 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Packaging: Tube Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: 175°C (Max) |
на замовлення 1676 шт: термін постачання 21-31 дні (днів) |
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STTH812FP | STMicroelectronics |
Description: DIODE STD 1200V 8A TO220FPAC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220FPAC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A Current - Reverse Leakage @ Vr: 8 µA @ 1200 V |
на замовлення 2127 шт: термін постачання 21-31 дні (днів) |
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STTH9012TV1 | STMicroelectronics |
Description: DIODE MODULE GP 1200V 45A ISOTOP Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 45A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 125 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Tube Current - Reverse Leakage @ Vr: 30 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 45 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: 150°C (Max) |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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STTH9012TV2 | STMicroelectronics |
Description: DIODE MODULE GP 1200V 45A ISOTOP Current - Reverse Leakage @ Vr: 30 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 45 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 45A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 125 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Tube |
на замовлення 177 шт: термін постачання 21-31 дні (днів) |
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| STB13007DT4 |
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Виробник: STMicroelectronics
Description: TRANS NPN 400V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 400V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
товару немає в наявності
В кошику
од. на суму грн.
| STB45NF06 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 38A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 38A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| STB85NF55LT4 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 80A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 55V 80A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1736 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 219.47 грн |
| 10+ | 137.52 грн |
| 100+ | 95.50 грн |
| 500+ | 76.29 грн |
| STD11NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Description: MOSFET N-CH 600V 10A DPAK
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| STGB10NC60KDT4 |
|
Виробник: STMicroelectronics
Description: IGBT 600V 20A 65W D2PAK
Power - Max: 65 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 19 nC
Test Condition: 390V, 5A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Reverse Recovery Time (trr): 22 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: IGBT 600V 20A 65W D2PAK
Power - Max: 65 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 19 nC
Test Condition: 390V, 5A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Reverse Recovery Time (trr): 22 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 266 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 134.82 грн |
| 10+ | 82.80 грн |
| 100+ | 55.90 грн |
| STGD14NC60KT4 |
Виробник: STMicroelectronics
Description: IGBT 600V 25A 80W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 22.5ns/116ns
Switching Energy: 82µJ (on), 155µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 34.4 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
Description: IGBT 600V 25A 80W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 22.5ns/116ns
Switching Energy: 82µJ (on), 155µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 34.4 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
на замовлення 1256 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 168.52 грн |
| 10+ | 104.46 грн |
| 100+ | 71.44 грн |
| 500+ | 53.78 грн |
| 1000+ | 49.52 грн |
| STP16CP05MTR | |
|
Виробник: STMicroelectronics
Description: IC LED DRIVER LINEAR 100MA 24SO
Part Status: Active
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 30MHz
Number of Outputs: 16
Mounting Type: Surface Mount
Voltage - Output: 20V
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: IC LED DRIVER LINEAR 100MA 24SO
Part Status: Active
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 30MHz
Number of Outputs: 16
Mounting Type: Surface Mount
Voltage - Output: 20V
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
на замовлення 10059 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 117.57 грн |
| 10+ | 83.48 грн |
| 25+ | 75.90 грн |
| 100+ | 63.43 грн |
| 250+ | 59.71 грн |
| 500+ | 57.46 грн |
| STP16CP05TTR |
|
Виробник: STMicroelectronics
Description: IC LED DRVR LINEAR 100MA 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-TSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRVR LINEAR 100MA 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-TSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
на замовлення 5038 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.28 грн |
| 10+ | 86.57 грн |
| 25+ | 78.80 грн |
| 100+ | 65.92 грн |
| 250+ | 62.09 грн |
| 500+ | 59.78 грн |
| 1000+ | 56.93 грн |
| STP16CP05XTTR |
|
Виробник: STMicroelectronics
Description: IC LED DRVR LINEAR 100MA 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-TSSOP-EP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRVR LINEAR 100MA 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-TSSOP-EP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
на замовлення 4262 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 111.30 грн |
| 10+ | 78.35 грн |
| 25+ | 71.22 грн |
| 100+ | 59.46 грн |
| 250+ | 55.95 грн |
| 500+ | 53.83 грн |
| 1000+ | 51.23 грн |
| STP16CPS05MTR |
|
Виробник: STMicroelectronics
Description: IC LED DRIVER LINEAR 100MA 24SOP
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRIVER LINEAR 100MA 24SOP
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
на замовлення 1053 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 174.79 грн |
| 10+ | 125.29 грн |
| 25+ | 114.49 грн |
| 100+ | 96.33 грн |
| 250+ | 91.03 грн |
| 500+ | 88.85 грн |
| STP16CPS05XTTR |
|
Виробник: STMicroelectronics
Description: IC LED DRVR LINEAR 100MA 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-TSSOP-EP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRVR LINEAR 100MA 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-TSSOP-EP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
на замовлення 6755 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 148.92 грн |
| 10+ | 106.12 грн |
| 25+ | 96.76 грн |
| 100+ | 81.17 грн |
| 250+ | 76.58 грн |
| 500+ | 74.19 грн |
| STS17NH3LL |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 17A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 17A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| STTH2002G-TR |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 200V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1803 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.65 грн |
| 10+ | 87.40 грн |
| 100+ | 59.00 грн |
| 500+ | 43.96 грн |
| STTH212U |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 1200V 2A SMB
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 1200V 2A SMB
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 24356 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.97 грн |
| 12+ | 26.04 грн |
| 100+ | 19.25 грн |
| 500+ | 13.75 грн |
| 1000+ | 12.36 грн |
| STTH312B-TR |
|
Виробник: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 3A DPAK
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1.2KV 3A DPAK
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| STTH3R02QRL |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 200V 3A DO15
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-15
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 200V 3A DO15
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-15
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
на замовлення 20480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.38 грн |
| 23+ | 13.51 грн |
| 100+ | 11.98 грн |
| 500+ | 8.90 грн |
| 1000+ | 7.31 грн |
| 2000+ | 7.13 грн |
| STTH4R02S |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 200V 4A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Description: DIODE STANDARD 200V 4A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
на замовлення 28833 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.97 грн |
| 13+ | 24.38 грн |
| 100+ | 17.41 грн |
| 500+ | 12.40 грн |
| 1000+ | 11.13 грн |
| STTH512B-TR |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 1200V 5A DPAK
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 1200V 5A DPAK
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 7936 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.16 грн |
| 10+ | 34.87 грн |
| 100+ | 26.67 грн |
| 500+ | 19.29 грн |
| 1000+ | 17.44 грн |
| TDE1708DFT |
|
Виробник: STMicroelectronics
Description: IC PWR SWITCH BIPOLAR 1:2 8DFN
Voltage - Load: 6V ~ 48V
Input Type: Non-Inverting
Output Configuration: High Side or Low Side
Operating Temperature: -25°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: 8-VDFN Exposed Pad
Features: 5V Regulated Output
Packaging: Cut Tape (CT)
Fault Protection: Over Temperature, Reverse Current
Supplier Device Package: 8-DFN (4x4)
Ratio - Input:Output: 1:2
Current - Output (Max): 250mA
Voltage - Supply (Vcc/Vdd): Not Required
Description: IC PWR SWITCH BIPOLAR 1:2 8DFN
Voltage - Load: 6V ~ 48V
Input Type: Non-Inverting
Output Configuration: High Side or Low Side
Operating Temperature: -25°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: 8-VDFN Exposed Pad
Features: 5V Regulated Output
Packaging: Cut Tape (CT)
Fault Protection: Over Temperature, Reverse Current
Supplier Device Package: 8-DFN (4x4)
Ratio - Input:Output: 1:2
Current - Output (Max): 250mA
Voltage - Supply (Vcc/Vdd): Not Required
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| TS3022IDT |
|
Виробник: STMicroelectronics
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 105ns
Current - Quiescent (Max): 90µA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.16µA @ 5V
CMRR, PSRR (Typ): 79dB CMRR
Part Status: Active
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 105ns
Current - Quiescent (Max): 90µA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.16µA @ 5V
CMRR, PSRR (Typ): 79dB CMRR
Part Status: Active
на замовлення 11559 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.14 грн |
| 10+ | 84.31 грн |
| 25+ | 76.72 грн |
| 100+ | 64.13 грн |
| 250+ | 60.38 грн |
| 500+ | 58.12 грн |
| 1000+ | 55.34 грн |
| TSV912IST |
|
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Packaging: Cut Tape (CT)
Current - Output / Channel: 35 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MiniSO
Voltage - Input Offset: 4.5 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 8 MHz
Slew Rate: 4.5V/µs
Current - Supply: 780µA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Packaging: Cut Tape (CT)
Current - Output / Channel: 35 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MiniSO
Voltage - Input Offset: 4.5 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 8 MHz
Slew Rate: 4.5V/µs
Current - Supply: 780µA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
на замовлення 8928 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.22 грн |
| 10+ | 60.16 грн |
| 25+ | 54.50 грн |
| 100+ | 45.27 грн |
| 250+ | 42.46 грн |
| 500+ | 40.77 грн |
| 1000+ | 38.74 грн |
| VIPER53ESPTR-E |
|
Виробник: STMicroelectronics
Description: IC OFFLINE SW FLBACK 10POWERSO
Packaging: Cut Tape (CT)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 11.5 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Active
Power (Watts): 65 W
Description: IC OFFLINE SW FLBACK 10POWERSO
Packaging: Cut Tape (CT)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 11.5 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Active
Power (Watts): 65 W
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| VN540SPTR-E |
|
Виробник: STMicroelectronics
Description: IC PWR DRIVER 1:1 PWRSO10
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -25°C ~ 85°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 10V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Active
Description: IC PWR DRIVER 1:1 PWRSO10
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -25°C ~ 85°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 10V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Active
на замовлення 786 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 534.56 грн |
| 10+ | 397.77 грн |
| 25+ | 368.70 грн |
| 100+ | 315.99 грн |
| 250+ | 308.00 грн |
| 74LVC04ATTR |
|
Виробник: STMicroelectronics
Description: IC INVERTER 6CH 1-INP 14TSSOP
Current - Quiescent (Max): 10 µA
Number of Circuits: 6
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 1
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC INVERTER 6CH 1-INP 14TSSOP
Current - Quiescent (Max): 10 µA
Number of Circuits: 6
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 1
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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| ESDA6V1-5M6 |
|
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 6UQFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 70pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 6-µQFN (1.45x1.0)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3VWM 6UQFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 70pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 6-µQFN (1.45x1.0)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
на замовлення 994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.62 грн |
| 14+ | 22.49 грн |
| 100+ | 14.34 грн |
| 500+ | 10.15 грн |
| ESDALC6V1-5M6 |
|
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 6UQFN
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Breakdown (Min): 6.1V
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 12pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
Unidirectional Channels: 5
Supplier Device Package: 6-µQFN (1.45x1.0)
Description: TVS DIODE 3VWM 6UQFN
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Breakdown (Min): 6.1V
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 12pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
Unidirectional Channels: 5
Supplier Device Package: 6-µQFN (1.45x1.0)
на замовлення 22050 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.51 грн |
| 22+ | 14.34 грн |
| 100+ | 10.23 грн |
| 500+ | 8.32 грн |
| 1000+ | 7.60 грн |
| STSJ100NH3LL |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 100A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC-EP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 12.5A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Description: MOSFET N-CH 30V 100A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC-EP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 12.5A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
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| TSM103IDT |
|
Виробник: STMicroelectronics
Description: IC AMPLIFIER 8SO
Description: IC AMPLIFIER 8SO
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| BAS70FILM |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 70V 70MA SOT23-3
Description: DIODE SCHOTTKY 70V 70MA SOT23-3
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| BD679 |
|
Виробник: STMicroelectronics
Description: TRANS NPN DARL 80V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Description: TRANS NPN DARL 80V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
на замовлення 76 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 55.65 грн |
| 50+ | 24.47 грн |
| Q3108517 |
Виробник: STMicroelectronics
Description: KIT ESD PROTECT DIO 15 VALUE 5EA
Part Status: Obsolete
Voltage - Breakdown: 6V ~ 12V
Kit Type: ESD Protection
Quantity: 75 Pieces (15 Values - 5 Each)
Mounting Type: Surface Mount
Packaging: Bulk
Description: KIT ESD PROTECT DIO 15 VALUE 5EA
Part Status: Obsolete
Voltage - Breakdown: 6V ~ 12V
Kit Type: ESD Protection
Quantity: 75 Pieces (15 Values - 5 Each)
Mounting Type: Surface Mount
Packaging: Bulk
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| Q3067543 |
Виробник: STMicroelectronics
Description: KIT DIODES 18VALUES 5 EACH
Description: KIT DIODES 18VALUES 5 EACH
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| 2STX2220 |
|
Виробник: STMicroelectronics
Description: TRANS PNP 20V 1.5A TO-92
Description: TRANS PNP 20V 1.5A TO-92
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| BUL704 |
|
Виробник: STMicroelectronics
Description: TRANS NPN 400V 4A TO-220
Description: TRANS NPN 400V 4A TO-220
на замовлення 2871 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STC04IE170HP |
|
Виробник: STMicroelectronics
Description: TRANS ESBT 1700V 4A TO247-4LHP
Supplier Device Package: TO-247-4L
Applications: Gate Driver
Transistor Type: NPN - Emitter Switched Bipolar
Mounting Type: Through Hole
Current Rating (Amps): 4A
Package / Case: TO-247-4
Voltage - Rated: 1700V (1.7kV)
Packaging: Tube
Description: TRANS ESBT 1700V 4A TO247-4LHP
Supplier Device Package: TO-247-4L
Applications: Gate Driver
Transistor Type: NPN - Emitter Switched Bipolar
Mounting Type: Through Hole
Current Rating (Amps): 4A
Package / Case: TO-247-4
Voltage - Rated: 1700V (1.7kV)
Packaging: Tube
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| STF11NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 10A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| STGP30NC60W |
|
Виробник: STMicroelectronics
Description: IGBT 600V 60A TO-220
Power - Max: 200 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 102 nC
Test Condition: 390V, 20A, 10Ohm, 15V
Switching Energy: 305µJ (on), 181µJ (off)
Td (on/off) @ 25°C: 29.5ns/118ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: IGBT 600V 60A TO-220
Power - Max: 200 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 102 nC
Test Condition: 390V, 20A, 10Ohm, 15V
Switching Energy: 305µJ (on), 181µJ (off)
Td (on/off) @ 25°C: 29.5ns/118ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| STP11NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Description: MOSFET N-CH 600V 10A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
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| STP16CP05B1R |
|
Виробник: STMicroelectronics
Description: IC LED DRIVER LINEAR 100MA 24DIP
Part Status: Obsolete
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-DIP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 30MHz
Number of Outputs: 16
Mounting Type: Through Hole
Voltage - Output: 20V
Package / Case: 24-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC LED DRIVER LINEAR 100MA 24DIP
Part Status: Obsolete
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-DIP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 30MHz
Number of Outputs: 16
Mounting Type: Through Hole
Voltage - Output: 20V
Package / Case: 24-DIP (0.300", 7.62mm)
Packaging: Tube
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| STP16CPS05B1R |
|
Виробник: STMicroelectronics
Description: IC LED DRIVER LINEAR 100MA 24DIP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-DIP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 30MHz
Number of Outputs: 16
Mounting Type: Through Hole
Voltage - Output: 20V
Package / Case: 24-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC LED DRIVER LINEAR 100MA 24DIP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-DIP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 30MHz
Number of Outputs: 16
Mounting Type: Through Hole
Voltage - Output: 20V
Package / Case: 24-DIP (0.300", 7.62mm)
Packaging: Tube
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| STP65NF06 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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| STPS10150CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 150V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Description: DIODE ARR SCHOTT 150V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
на замовлення 1403 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.68 грн |
| 50+ | 24.18 грн |
| 100+ | 23.24 грн |
| 500+ | 20.36 грн |
| 1000+ | 19.20 грн |
| STPS10H100CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 100V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.98 грн |
| 50+ | 18.33 грн |
| 100+ | 18.21 грн |
| STPS20S100CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
на замовлення 965 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 96.41 грн |
| 50+ | 43.51 грн |
| 100+ | 38.66 грн |
| 500+ | 28.31 грн |
| STTH12012TV1 | |
|
Виробник: STMicroelectronics
Description: DIODE MODULE GP 1200V 60A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Description: DIODE MODULE GP 1200V 60A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1611.52 грн |
| 10+ | 1124.55 грн |
| 100+ | 925.40 грн |
| STTH12012TV2 | |
|
Виробник: STMicroelectronics
Description: DIODE MODULE GP 1200V 60A ISOTOP
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 125 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Description: DIODE MODULE GP 1200V 60A ISOTOP
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 125 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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| STTH1210FP |
|
Виробник: STMicroelectronics
Description: DIODE GEN PURP 1KV 12A TO220FPAC
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220FPAC
Current - Average Rectified (Io): 12A
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
Description: DIODE GEN PURP 1KV 12A TO220FPAC
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220FPAC
Current - Average Rectified (Io): 12A
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
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| STTH212 |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 1200V 2A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Description: DIODE STANDARD 1200V 2A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
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| STTH212RL |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 1200V 2A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 1200V 2A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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| STTH3002W |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 200V 30A DO247
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-247
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Packaging: Tube
Description: DIODE STANDARD 200V 30A DO247
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-247
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Packaging: Tube
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| STTH3010PI |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 1000V 30A DOP3I
Packaging: Tube
Package / Case: DOP3I-2 Insulated (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DOP3I
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1000 V
Description: DIODE STANDARD 1000V 30A DOP3I
Packaging: Tube
Package / Case: DOP3I-2 Insulated (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DOP3I
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1000 V
на замовлення 796 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 198.31 грн |
| 30+ | 155.56 грн |
| 120+ | 148.36 грн |
| 510+ | 127.51 грн |
| STTH6006TV1 | |
|
Виробник: STMicroelectronics
Description: DIODE MODULE GP 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Description: DIODE MODULE GP 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
на замовлення 89 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1551.95 грн |
| 10+ | 1072.47 грн |
| STTH6110TV2 | |
|
Виробник: STMicroelectronics
Description: DIODE MODULE GP 1000V 30A ISOTOP
Current - Reverse Leakage @ Vr: 15 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Description: DIODE MODULE GP 1000V 30A ISOTOP
Current - Reverse Leakage @ Vr: 15 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
на замовлення 72 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1648.36 грн |
| 10+ | 1143.42 грн |
| STTH6112TV1 | |
|
Виробник: STMicroelectronics
Description: DIODE MODULE GP 1200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Description: DIODE MODULE GP 1200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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| STTH6112TV2 | |
|
Виробник: STMicroelectronics
Description: DIODE MODULE GP 1200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Description: DIODE MODULE GP 1200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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| STTH806DIRG |
|
Виробник: STMicroelectronics
Description: DIODE STD 600V 8A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Description: DIODE STD 600V 8A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
на замовлення 204 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 81.52 грн |
| 50+ | 41.41 грн |
| 100+ | 41.38 грн |
| STTH810FP |
|
Виробник: STMicroelectronics
Description: DIODE STD 1000V 8A TO220FPAC
Supplier Device Package: TO-220FPAC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Description: DIODE STD 1000V 8A TO220FPAC
Supplier Device Package: TO-220FPAC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
на замовлення 1676 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.46 грн |
| 50+ | 24.09 грн |
| 100+ | 22.48 грн |
| STTH812FP |
|
Виробник: STMicroelectronics
Description: DIODE STD 1200V 8A TO220FPAC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
Description: DIODE STD 1200V 8A TO220FPAC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
на замовлення 2127 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 112.87 грн |
| 50+ | 51.39 грн |
| 100+ | 45.79 грн |
| 500+ | 33.74 грн |
| 1000+ | 30.77 грн |
| 2000+ | 28.27 грн |
| STTH9012TV1 | |
|
Виробник: STMicroelectronics
Description: DIODE MODULE GP 1200V 45A ISOTOP
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 45A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 125 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 45 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Description: DIODE MODULE GP 1200V 45A ISOTOP
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 45A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 125 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 45 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
на замовлення 88 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2095.14 грн |
| 10+ | 1474.25 грн |
| STTH9012TV2 | |
|
Виробник: STMicroelectronics
Description: DIODE MODULE GP 1200V 45A ISOTOP
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 45 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 45A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 125 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Description: DIODE MODULE GP 1200V 45A ISOTOP
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 45 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 45A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 125 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
на замовлення 177 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2161.76 грн |
| 10+ | 1523.68 грн |
| 100+ | 1298.62 грн |