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STR736FV1T6 STR736FV1T6 STMicroelectronics STR73xFxx.pdf Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 36MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 12x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Number of I/O: 72
DigiKey Programmable: Not Verified
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STR750-D/RAIS STMicroelectronics en.CD00063322.pdf Description: RAISONANCE REVA STR75XF EVAL BRD
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STR750FV0H6 STR750FV0H6 STMicroelectronics en.CD00050740.pdf Description: IC MCU 32BIT 64KB FLASH 100LFBGA
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STR750FV1H6 STR750FV1H6 STMicroelectronics en.CD00050740.pdf Description: IC MCU 32BIT 128KB FLASH 100BGA
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STR752FR0T6 STR752FR0T6 STMicroelectronics CD00050740.pdf Description: IC MCU 32BIT 64KB FLASH 64LQFP
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STR752FR1T6 STR752FR1T6 STMicroelectronics en.CD00050740.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 11x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, SPI, SSI, SSP, UART/USART
Peripherals: DMA, PWM, WDT
Number of I/O: 38
DigiKey Programmable: Not Verified
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STR755FR0T6 STR755FR0T6 STMicroelectronics CD00050740.pdf Description: IC MCU 32BIT 64KB FLASH 64LQFP
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STR755FR1T6 STR755FR1T6 STMicroelectronics CD00050740.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
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STR755FV0H6 STMicroelectronics CD00050740.pdf Description: IC MCU 32BIT 64KB FLASH 64LFBGA
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STR755FV1H6 STR755FV1H6 STMicroelectronics CD00050740.pdf Description: IC MCU 32BIT 128KB FLASH 64LFBGA
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STR7-RVDK/BAS STMicroelectronics CD00133191.pdf Description: KIT DEV ARM REALVIEW STR7/9 MCU
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STR912-D/RAIS STMicroelectronics en.CD00063322.pdf Description: RAISONANCE REVA STR91XF EVAL BRD
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STR91X-DK/IAR STMicroelectronics en.CD00133190.pdf Description: IAR KICKSTART STR91XF EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD, J-Trace Programmer
Core Processor: ARM9
Utilized IC / Part: STR91xF
Platform: IAR KickStart
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STR91X-SK/HIT STR91X-SK/HIT STMicroelectronics ST(M32,R91X,R7)-SK,HIT.pdf Description: HITEX STR91XF EVAL BRD
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STR9-DK/RAIS STMicroelectronics CD00116029.pdf Description: KIT DEV RAISONANCE STR7/9
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STR9-RVDK/BAS STMicroelectronics CD00133191.pdf Description: KIT DEV ARM REALVIEW STR7/9 MCU
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STREALIZER-II STMicroelectronics STREALIZER-II.pdf Description: KIT DEVELOPMENT IDE
Packaging: Bulk
For Use With/Related Products: ST6, ST7
Type: Actum Solutions IDE
Applications: Programming
Operating System: Windows
Media Delivery Type: CD/DVD
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STR-EW/D/IAR STMicroelectronics CD00133190.pdf Description: KIT DEV EWARM STD LICENSE DONGLE
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STR-EW/IAR STMicroelectronics CD00133190.pdf Description: KIT DEV EWARM STD LOCKED HOST PC
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STR-EW-BL/D/IAR STMicroelectronics CD00133190.pdf Description: KIT DEV EWARM-BL LICENSE DONGLE
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STR-EW-BL/IAR STMicroelectronics CD00133190.pdf Description: KIT DEV EWARM-BL LOCKED HOST PC
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STR-EWDOC/IAR STMicroelectronics CD00133190.pdf Description: KIT DEV EWARM DOC
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STR-RVICE/ME STMicroelectronics CD00133191.pdf Description: DEBUGGER/PROGRAMMER STR7 & STR9
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STS3DNE60L STS3DNE60L STMicroelectronics STS3DNE60L.pdf Description: MOSFET 2N-CH 60V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 25V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
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STS4DNF60 STS4DNF60 STMicroelectronics en.CD00157832.pdf Description: MOSFET 2N-CH 60V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
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STSA851-AP STSA851-AP STMicroelectronics en.CD00003052.pdf Description: TRANS NPN 60V 5A TO92AP
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92AP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.1 W
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STSJ100NHS3LL STSJ100NHS3LL STMicroelectronics STSJ100NHS3LL.pdf Description: MOSFET N-CH 30V 100A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOIC-EP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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STT13005 STT13005 STMicroelectronics STT13005_Rev3_Nov2009.pdf Description: TRANS NPN 400V 2A SOT32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 45 W
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STT13005D STT13005D STMicroelectronics en.CD00204099.pdf Description: TRANS NPN 400V 2A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 45 W
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STTH1003G STTH1003G STMicroelectronics Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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STTH120L04TV1 STTH120L04TV1 STMicroelectronics en.CD00144236.pdf Description: DIODE MODULE GP 400V 60A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
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STTH1210G STTH1210G STMicroelectronics en.CD00096485.pdf Description: DIODE GEN PURP 1KV 12A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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STTH1212G STTH1212G STMicroelectronics en.CD00096468.pdf Description: DIODE GEN PURP 1.2KV 12A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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STTH15L06G-TR STTH15L06G-TR STMicroelectronics en.CD00043013.pdf Description: DIODE STANDARD 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+49.81 грн
2000+43.71 грн
Мінімальне замовлення: 1000
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STTH16L06CG-TR STTH16L06CG-TR STMicroelectronics en.CD00043014.pdf Description: DIODE ARRAY GP 600V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
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STTH2002G STTH2002G STMicroelectronics en.CD00110358.pdf Description: DIODE STANDARD 200V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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STTH2003CR STTH2003CR STMicroelectronics en.CD00001289.pdf Description: DIODE ARRAY GP 300V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
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STTH2R02Q STTH2R02Q STMicroelectronics en.CD00110332.pdf Description: DIODE STANDARD 200V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
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STTH3002G STTH3002G STMicroelectronics en.CD00110364.pdf Description: DIODE STANDARD 200V 30A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
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STTH312B STTH312B STMicroelectronics stth312.pdf Description: DIODE GEN PURP 1.2KV 3A DPAK
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STTH4R02B STTH4R02B STMicroelectronics en.CD00110337.pdf Description: DIODE STANDARD 200V 4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
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STTH506B STTH506B STMicroelectronics en.CD00110837.pdf Description: DIODE STANDARD 600V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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STTH506D STTH506D STMicroelectronics en.CD00110837.pdf Description: DIODE STANDARD 600V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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STTH512B STTH512B STMicroelectronics en.CD00096465.pdf Description: DIODE STANDARD 1200V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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STTH6006W STTH6006W STMicroelectronics en.CD00110835.pdf Description: DIODE STANDARD 600V 60A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 903 шт:
термін постачання 21-31 дні (днів)
2+215.80 грн
30+138.30 грн
120+126.42 грн
510+110.45 грн
Мінімальне замовлення: 2
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STTH602CFP STTH602CFP STMicroelectronics STTH602C.pdf Description: DIODE ARRAY GP 200V 3A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
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STTH602CT STTH602CT STMicroelectronics stth602c.pdf Description: DIODE ARRAY GP 200V 3A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
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STTH60L04W STTH60L04W STMicroelectronics en.CD00144235.pdf Description: DIODE STANDARD 400V 60A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
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STTH8006W STTH8006W STMicroelectronics STTH8006.pdf Description: DIODE STANDARD 600V 80A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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STTH802B STTH802B STMicroelectronics en.CD00110353.pdf Description: DIODE GEN PURP 200V 8A DPAK
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STTH806D STTH806D STMicroelectronics en.CD00110836.pdf Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
2+229.91 грн
Мінімальне замовлення: 2
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STTH806G STTH806G STMicroelectronics en.CD00110836.pdf Description: DIODE STANDARD 600V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
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STTH810G STTH810G STMicroelectronics en.CD00096480.pdf Description: DIODE GEN PURP 1KV 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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STTH810G-TR STTH810G-TR STMicroelectronics en.CD00096480.pdf Description: DIODE STANDARD 1000V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+42.10 грн
Мінімальне замовлення: 1000
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STTH812G STTH812G STMicroelectronics en.CD00096467.pdf Description: DIODE GEN PURP 1.2KV 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
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STTH8R06G STTH8R06G STMicroelectronics en.CD00002378.pdf Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
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STUPSD-SK/RAIS STMicroelectronics Description: RAISONANCE REVA UPSD3200/3300
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STUSB03EQR STUSB03EQR STMicroelectronics en.CD00144077.pdf Description: IC TRANSCEIVER HALF 1/1 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 12Mbps
Protocol: USB 2.0
Supplier Device Package: 16-QFN (3x3)
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+47.91 грн
Мінімальне замовлення: 3000
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STV160NF02LAT4 STV160NF02LAT4 STMicroelectronics en.CD00002192.pdf Description: MOSFET N-CH 20V 160A 10POWERSO
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 10-PowerSO
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V
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STV160NF03LAT4 STV160NF03LAT4 STMicroelectronics en.CD00002193.pdf Description: MOSFET N-CH 30V 160A 10POWERSO
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 10-PowerSO
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V
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STR736FV1T6 STR73xFxx.pdf
STR736FV1T6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 36MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 12x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Number of I/O: 72
DigiKey Programmable: Not Verified
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STR750-D/RAIS en.CD00063322.pdf
Виробник: STMicroelectronics
Description: RAISONANCE REVA STR75XF EVAL BRD
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STR750FV0H6 en.CD00050740.pdf
STR750FV0H6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 100LFBGA
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STR750FV1H6 en.CD00050740.pdf
STR750FV1H6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 100BGA
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STR752FR0T6 CD00050740.pdf
STR752FR0T6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 64LQFP
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STR752FR1T6 en.CD00050740.pdf
STR752FR1T6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 11x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, SPI, SSI, SSP, UART/USART
Peripherals: DMA, PWM, WDT
Number of I/O: 38
DigiKey Programmable: Not Verified
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STR755FR0T6 CD00050740.pdf
STR755FR0T6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 64LQFP
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STR755FR1T6 CD00050740.pdf
STR755FR1T6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 64LQFP
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STR755FV0H6 CD00050740.pdf
Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 64LFBGA
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STR755FV1H6 CD00050740.pdf
STR755FV1H6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 64LFBGA
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STR7-RVDK/BAS CD00133191.pdf
Виробник: STMicroelectronics
Description: KIT DEV ARM REALVIEW STR7/9 MCU
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STR912-D/RAIS en.CD00063322.pdf
Виробник: STMicroelectronics
Description: RAISONANCE REVA STR91XF EVAL BRD
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STR91X-DK/IAR en.CD00133190.pdf
Виробник: STMicroelectronics
Description: IAR KICKSTART STR91XF EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD, J-Trace Programmer
Core Processor: ARM9
Utilized IC / Part: STR91xF
Platform: IAR KickStart
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STR91X-SK/HIT ST(M32,R91X,R7)-SK,HIT.pdf
STR91X-SK/HIT
Виробник: STMicroelectronics
Description: HITEX STR91XF EVAL BRD
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STR9-DK/RAIS CD00116029.pdf
Виробник: STMicroelectronics
Description: KIT DEV RAISONANCE STR7/9
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STR9-RVDK/BAS CD00133191.pdf
Виробник: STMicroelectronics
Description: KIT DEV ARM REALVIEW STR7/9 MCU
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STREALIZER-II STREALIZER-II.pdf
Виробник: STMicroelectronics
Description: KIT DEVELOPMENT IDE
Packaging: Bulk
For Use With/Related Products: ST6, ST7
Type: Actum Solutions IDE
Applications: Programming
Operating System: Windows
Media Delivery Type: CD/DVD
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STR-EW/D/IAR CD00133190.pdf
Виробник: STMicroelectronics
Description: KIT DEV EWARM STD LICENSE DONGLE
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STR-EW/IAR CD00133190.pdf
Виробник: STMicroelectronics
Description: KIT DEV EWARM STD LOCKED HOST PC
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STR-EW-BL/D/IAR CD00133190.pdf
Виробник: STMicroelectronics
Description: KIT DEV EWARM-BL LICENSE DONGLE
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STR-EW-BL/IAR CD00133190.pdf
Виробник: STMicroelectronics
Description: KIT DEV EWARM-BL LOCKED HOST PC
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STR-EWDOC/IAR CD00133190.pdf
Виробник: STMicroelectronics
Description: KIT DEV EWARM DOC
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STR-RVICE/ME CD00133191.pdf
Виробник: STMicroelectronics
Description: DEBUGGER/PROGRAMMER STR7 & STR9
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STS3DNE60L STS3DNE60L.pdf
STS3DNE60L
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 60V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 25V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
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STS4DNF60 en.CD00157832.pdf
STS4DNF60
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 60V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
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STSA851-AP en.CD00003052.pdf
STSA851-AP
Виробник: STMicroelectronics
Description: TRANS NPN 60V 5A TO92AP
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92AP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.1 W
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STSJ100NHS3LL STSJ100NHS3LL.pdf
STSJ100NHS3LL
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 100A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOIC-EP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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STT13005 STT13005_Rev3_Nov2009.pdf
STT13005
Виробник: STMicroelectronics
Description: TRANS NPN 400V 2A SOT32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 45 W
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STT13005D en.CD00204099.pdf
STT13005D
Виробник: STMicroelectronics
Description: TRANS NPN 400V 2A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 45 W
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STTH1003G
STTH1003G
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товару немає в наявності
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STTH120L04TV1 en.CD00144236.pdf
STTH120L04TV1
Виробник: STMicroelectronics
Description: DIODE MODULE GP 400V 60A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
товару немає в наявності
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STTH1210G en.CD00096485.pdf
STTH1210G
Виробник: STMicroelectronics
Description: DIODE GEN PURP 1KV 12A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
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STTH1212G en.CD00096468.pdf
STTH1212G
Виробник: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 12A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товару немає в наявності
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STTH15L06G-TR en.CD00043013.pdf
STTH15L06G-TR
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+49.81 грн
2000+43.71 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STTH16L06CG-TR en.CD00043014.pdf
STTH16L06CG-TR
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 600V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STTH2002G en.CD00110358.pdf
STTH2002G
Виробник: STMicroelectronics
Description: DIODE STANDARD 200V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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STTH2003CR en.CD00001289.pdf
STTH2003CR
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 300V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
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STTH2R02Q en.CD00110332.pdf
STTH2R02Q
Виробник: STMicroelectronics
Description: DIODE STANDARD 200V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
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STTH3002G en.CD00110364.pdf
STTH3002G
Виробник: STMicroelectronics
Description: DIODE STANDARD 200V 30A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
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STTH312B stth312.pdf
STTH312B
Виробник: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 3A DPAK
товару немає в наявності
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STTH4R02B en.CD00110337.pdf
STTH4R02B
Виробник: STMicroelectronics
Description: DIODE STANDARD 200V 4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
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STTH506B en.CD00110837.pdf
STTH506B
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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STTH506D en.CD00110837.pdf
STTH506D
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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STTH512B en.CD00096465.pdf
STTH512B
Виробник: STMicroelectronics
Description: DIODE STANDARD 1200V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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STTH6006W en.CD00110835.pdf
STTH6006W
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 60A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 903 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+215.80 грн
30+138.30 грн
120+126.42 грн
510+110.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STTH602CFP STTH602C.pdf
STTH602CFP
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 200V 3A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
товару немає в наявності
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STTH602CT stth602c.pdf
STTH602CT
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 200V 3A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
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STTH60L04W en.CD00144235.pdf
STTH60L04W
Виробник: STMicroelectronics
Description: DIODE STANDARD 400V 60A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
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STTH8006W STTH8006.pdf
STTH8006W
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 80A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
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STTH802B en.CD00110353.pdf
STTH802B
Виробник: STMicroelectronics
Description: DIODE GEN PURP 200V 8A DPAK
товару немає в наявності
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STTH806D en.CD00110836.pdf
STTH806D
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+229.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STTH806G en.CD00110836.pdf
STTH806G
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
товару немає в наявності
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STTH810G en.CD00096480.pdf
STTH810G
Виробник: STMicroelectronics
Description: DIODE GEN PURP 1KV 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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STTH810G-TR en.CD00096480.pdf
STTH810G-TR
Виробник: STMicroelectronics
Description: DIODE STANDARD 1000V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+42.10 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STTH812G en.CD00096467.pdf
STTH812G
Виробник: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
товару немає в наявності
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STTH8R06G en.CD00002378.pdf
STTH8R06G
Виробник: STMicroelectronics
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
товару немає в наявності
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STUPSD-SK/RAIS
Виробник: STMicroelectronics
Description: RAISONANCE REVA UPSD3200/3300
товару немає в наявності
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STUSB03EQR en.CD00144077.pdf
STUSB03EQR
Виробник: STMicroelectronics
Description: IC TRANSCEIVER HALF 1/1 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 12Mbps
Protocol: USB 2.0
Supplier Device Package: 16-QFN (3x3)
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+47.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STV160NF02LAT4 en.CD00002192.pdf
STV160NF02LAT4
Виробник: STMicroelectronics
Description: MOSFET N-CH 20V 160A 10POWERSO
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 10-PowerSO
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V
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STV160NF03LAT4 en.CD00002193.pdf
STV160NF03LAT4
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 160A 10POWERSO
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 10-PowerSO
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
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