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2STN2540-A 2STN2540-A STMicroelectronics 2STN2540-A.pdf Description: TRANS PNP 40V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Supplier Device Package: SOT-223
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.6 W
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PD55025TR-E PD55025TR-E STMicroelectronics en.CD00108676.pdf Description: RF MOSFET LDMOS 12.5V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 7A
Frequency: 500MHz
Power - Output: 25W
Gain: 14.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Active
Voltage - Rated: 40 V
Voltage - Test: 12.5 V
Current - Test: 200 mA
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PD85025TR-E PD85025TR-E STMicroelectronics steval-tdr022v1.pdf Description: RF MOSFET LDMOS 13.6V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 7A
Frequency: 870MHz
Power - Output: 10W
Gain: 17.3dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 300 mA
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PD85025STR-E PD85025STR-E STMicroelectronics steval-tdr022v1.pdf Description: RF MOSFET LDMOS 13.6V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 7A
Frequency: 870MHz
Power - Output: 10W
Gain: 17.3dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 300 mA
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PD20015C PD20015C STMicroelectronics PD20015C.pdf Description: RF MOSFET LDMOS 13.6V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 7A
Frequency: 2GHz
Power - Output: 15W
Gain: 11dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 350 mA
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
1+4909.57 грн
10+4441.69 грн
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PD84010S-E PD84010S-E STMicroelectronics en.CD00167351.pdf Description: RF MOSFET LDMOS 7.5V PWRSO-10RF
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Current Rating (Amps): 8A
Frequency: 870MHz
Power - Output: 2W
Gain: 16.3dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 40 V
Voltage - Test: 7.5 V
Current - Test: 300 mA
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PD85025C PD85025C STMicroelectronics PD85025C.pdf Description: FET RF 40V 945MHZ M243
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PD85015TR-E PD85015TR-E STMicroelectronics CD00185996.pdf Description: TRANS RF N-CH FET POWERSO-10RF
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PD55015TR-E PD55015TR-E STMicroelectronics en.CD00128612.pdf Description: RF MOSFET LDMOS 12.5V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 5A
Frequency: 500MHz
Power - Output: 15W
Gain: 14dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 40 V
Voltage - Test: 12.5 V
Current - Test: 150 mA
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
600+1069.53 грн
Мінімальне замовлення: 600
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ST26025A ST26025A STMicroelectronics ST26025A.pdf Description: TRANS PNP DARL 100V 20A TO-3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Transistor Type: PNP - Darlington
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
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PD20010S-E PD20010S-E STMicroelectronics en.CD00228754.pdf Description: TRANS RF N-CH FET POWERSO-10RF
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ST5027 ST5027 STMicroelectronics Power%20Bipolar%20Transistors.pdf Description: TRANS NPN 800V 3A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 90 W
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PD20015-E PD20015-E STMicroelectronics Description: TRANS RF PWR N-CH POWERSO-10RF
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PD20015S-E PD20015S-E STMicroelectronics en.CD00173496.pdf Description: TRANS RF N-CH FET POWERSO-10RF
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SD2931-11 SD2931-11 STMicroelectronics SD2931-11.pdf Description: RF MOSFET 50V M246
Packaging: Box
Package / Case: M246
Current Rating (Amps): 20A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: M246
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 250 mA
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PD57006STR-E PD57006STR-E STMicroelectronics PD57006%28S%29-E.pdf Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 1A
Frequency: 945MHz
Power - Output: 6W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 70 mA
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PD85035C PD85035C STMicroelectronics en.CD00176191.pdf Description: FET RF 40V 945MHZ M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 8A
Frequency: 945MHz
Power - Output: 15W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: M243
Part Status: Obsolete
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 350 mA
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START499D START499D STMicroelectronics CD00187074.pdf Description: TRANS RF NPN 4.5V 1A SOT-89
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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PD54003S-E PD54003S-E STMicroelectronics en.CD00100209.pdf Description: RF MOSFET LDMOS 7.5V PWRSO-10RF
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Current Rating (Amps): 4A
Frequency: 500MHz
Power - Output: 3W
Gain: 12dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 25 V
Voltage - Test: 7.5 V
Current - Test: 50 mA
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PD85035TR-E PD85035TR-E STMicroelectronics en.CD00162008.pdf Description: TRANS RF N-CH FET POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 8A
Frequency: 870MHz
Power - Output: 15W
Gain: 17dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Active
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 350 mA
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PD20010-E PD20010-E STMicroelectronics radio-frequency-transistors.html Description: TRANS RF N-CH FET POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 5A
Frequency: 2GHz
Power - Output: 10W
Gain: 11dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 150 mA
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P0115DA 1AA3 P0115DA 1AA3 STMicroelectronics CD00217835.pdf Description: IC SCR 0.8A 400V TO-92
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BTB06-800SWRG BTB06-800SWRG STMicroelectronics bta06.pdf Description: TRIAC ALTERNISTOR 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
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STF30NM60N STF30NM60N STMicroelectronics en.CD00174866.pdf Description: MOSFET N-CH 600V 25A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
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STI21NM60ND STI21NM60ND STMicroelectronics STx21NM60ND_Rev3.pdf Description: MOSFET N-CH 600V 17A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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STP6NK90ZFP STP6NK90ZFP STMicroelectronics en.CD00003175.pdf description Description: MOSFET N-CH 900V 5.8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 60.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 548 шт:
термін постачання 21-31 дні (днів)
2+283.21 грн
50+139.01 грн
100+126.03 грн
500+96.94 грн
Мінімальне замовлення: 2
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STP7NK80ZFP STP7NK80ZFP STMicroelectronics en.CD00003046.pdf description Description: MOSFET N-CH 800V 5.2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
на замовлення 188 шт:
термін постачання 21-31 дні (днів)
2+273.39 грн
50+133.70 грн
100+121.14 грн
Мінімальне замовлення: 2
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STD17NF03L-1 STD17NF03L-1 STMicroelectronics STD17NF03L%28-1%29.pdf Description: MOSFET N-CH 30V 17A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
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STD70N02L-1 STD70N02L-1 STMicroelectronics en.CD00067209.pdf Description: MOSFET N-CH 25V 60A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 16 V
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STB7NK80Z-1 STB7NK80Z-1 STMicroelectronics en.CD00003046.pdf Description: MOSFET N-CH 800V 5.2A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
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STP9NK70ZFP STP9NK70ZFP STMicroelectronics en.CD00002909.pdf Description: MOSFET N-CH 700V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
на замовлення 984 шт:
термін постачання 21-31 дні (днів)
2+252.11 грн
50+113.38 грн
100+113.04 грн
500+105.26 грн
Мінімальне замовлення: 2
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STF6N62K3 STF6N62K3 STMicroelectronics en.CD00195598.pdf Description: MOSFET N-CH 620V 5.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.28Ohm @ 2.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
на замовлення 597 шт:
термін постачання 21-31 дні (днів)
5+66.30 грн
50+62.96 грн
100+62.31 грн
500+57.28 грн
Мінімальне замовлення: 5
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STD2NC45-1 STD2NC45-1 STMicroelectronics en.CD00003138.pdf Description: MOSFET N-CH 450V 1.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 664 шт:
термін постачання 21-31 дні (днів)
3+114.59 грн
75+49.03 грн
150+43.88 грн
525+34.32 грн
Мінімальне замовлення: 3
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STF60N55F3 STF60N55F3 STMicroelectronics en.CD00152203.pdf Description: MOSFET N-CH 55V 42A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
товару немає в наявності
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STF30NM60ND STF30NM60ND STMicroelectronics en.CD00174884.pdf Description: MOSFET N-CH 600V 25A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
товару немає в наявності
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STD2NK60Z-1 STD2NK60Z-1 STMicroelectronics en.CD00003700.pdf Description: MOSFET N-CH 600V 1.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STF6NK70Z STF6NK70Z STMicroelectronics en.CD00043979.pdf Description: MOSFET N-CH 700V 5A TO220FP
товару немає в наявності
В кошику  од. на суму  грн.
STP9NK50ZFP STP9NK50ZFP STMicroelectronics en.CD00002970.pdf Description: MOSFET N-CH 500V 7.2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
2+200.54 грн
50+90.61 грн
100+86.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP75NF68 STP75NF68 STMicroelectronics en.CD00205590.pdf Description: MOSFET N-CH 68V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 40A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STF6NM60N STF6NM60N STMicroelectronics en.CD00157375.pdf Description: MOSFET N-CH 600V 4.6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
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В кошику  од. на суму  грн.
STD1NK60-1 STD1NK60-1 STMicroelectronics std1nk60-1.pdf Description: MOSFET N-CH 600V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
на замовлення 1851 шт:
термін постачання 21-31 дні (днів)
3+116.23 грн
75+49.43 грн
150+44.25 грн
525+34.61 грн
1050+31.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF2HNK60Z STF2HNK60Z STMicroelectronics stf2hnk60z.pdf Description: MOSFET N-CH 600V 2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 670 шт:
термін постачання 21-31 дні (днів)
5+76.94 грн
50+49.11 грн
100+48.46 грн
500+44.56 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STF2NK60Z STF2NK60Z STMicroelectronics en.CD00003700.pdf Description: MOSFET N-CH 600V 1.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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В кошику  од. на суму  грн.
STP4NK50ZFP STP4NK50ZFP STMicroelectronics en.CD00003100.pdf Description: MOSFET N-CH 500V 3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
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TIP35CP TIP35CP STMicroelectronics en.CD00195733.pdf Description: TRANS NPN 100V 25A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-3P
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
на замовлення 195 шт:
термін постачання 21-31 дні (днів)
2+256.20 грн
30+134.52 грн
120+109.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP5NK50ZFP STP5NK50ZFP STMicroelectronics en.CD00003019.pdf description Description: MOSFET N-CH 500V 4.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
на замовлення 833 шт:
термін постачання 21-31 дні (днів)
2+203.82 грн
50+93.81 грн
100+87.15 грн
500+65.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF630FP IRF630FP STMicroelectronics en.CD00000701.pdf Description: MOSFET N-CH 200V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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STP7NK40ZFP STP7NK40ZFP STMicroelectronics en.CD00003040.pdf Description: MOSFET N-CH 400V 5.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
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В кошику  од. на суму  грн.
STP14NF12FP STP14NF12FP STMicroelectronics STP14NF12%28FP%29.pdf Description: MOSFET N-CH 120V 8.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
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STP14NF12 STP14NF12 STMicroelectronics STP14NF12%28FP%29.pdf Description: MOSFET N-CH 120V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 7A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP5NK65ZFP STP5NK65ZFP STMicroelectronics en.CD00230219.pdf Description: MOSFET N-CH 650V 4.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
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STF20NF06L STF20NF06L STMicroelectronics en.CD00047689.pdf Description: MOSFET N-CH 60V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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STP36NF06FP STP36NF06FP STMicroelectronics en.CD00003408.pdf Description: MOSFET N-CH 60V 18A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
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STP8NS25FP STP8NS25FP STMicroelectronics en.CD00002371.pdf Description: MOSFET N-CH 250V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 51.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
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STGB18N40LZ-1 STGB18N40LZ-1 STMicroelectronics en.CD00182201.pdf Description: IGBT 420V 30A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.7V @ 4.5V, 10A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 650ns/13.5µs
Test Condition: 300V, 10A, 5V
Gate Charge: 29 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 420 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
товару немає в наявності
В кошику  од. на суму  грн.
STI90N4F3 STI90N4F3 STMicroelectronics CD00177924.pdf Description: MOSFET N-CH 40V 80A I2PAK
товару немає в наявності
В кошику  од. на суму  грн.
STP5NK80ZFP STP5NK80ZFP STMicroelectronics en.CD00003038.pdf description Description: MOSFET N-CH 800V 4.3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.15A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 792 шт:
термін постачання 21-31 дні (днів)
3+122.78 грн
50+92.00 грн
100+90.27 грн
500+78.22 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STP11NK40ZFP STP11NK40ZFP STMicroelectronics en.CD00003028.pdf Description: MOSFET N-CH 400V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
на замовлення 1018 шт:
термін постачання 21-31 дні (днів)
2+207.91 грн
50+78.11 грн
100+76.39 грн
500+68.91 грн
1000+64.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP4NK80ZFP STP4NK80ZFP STMicroelectronics ST%28D%2CP%294NK80Z%28-1%2CFP%29.pdf Description: MOSFET N-CH 800V 3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
на замовлення 1599 шт:
термін постачання 21-31 дні (днів)
2+215.27 грн
50+103.41 грн
100+93.28 грн
500+70.86 грн
1000+65.50 грн
Мінімальне замовлення: 2
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STP70N10F4 STP70N10F4 STMicroelectronics en.CD00218149.pdf Description: MOSFET N-CH 100V 65A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
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2STN2540-A 2STN2540-A.pdf
2STN2540-A
Виробник: STMicroelectronics
Description: TRANS PNP 40V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Supplier Device Package: SOT-223
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.6 W
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PD55025TR-E en.CD00108676.pdf
PD55025TR-E
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 12.5V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 7A
Frequency: 500MHz
Power - Output: 25W
Gain: 14.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Active
Voltage - Rated: 40 V
Voltage - Test: 12.5 V
Current - Test: 200 mA
товару немає в наявності
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PD85025TR-E steval-tdr022v1.pdf
PD85025TR-E
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 13.6V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 7A
Frequency: 870MHz
Power - Output: 10W
Gain: 17.3dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 300 mA
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PD85025STR-E steval-tdr022v1.pdf
PD85025STR-E
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 13.6V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 7A
Frequency: 870MHz
Power - Output: 10W
Gain: 17.3dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 300 mA
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PD20015C PD20015C.pdf
PD20015C
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 13.6V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 7A
Frequency: 2GHz
Power - Output: 15W
Gain: 11dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 350 mA
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4909.57 грн
10+4441.69 грн
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PD84010S-E en.CD00167351.pdf
PD84010S-E
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 7.5V PWRSO-10RF
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Current Rating (Amps): 8A
Frequency: 870MHz
Power - Output: 2W
Gain: 16.3dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 40 V
Voltage - Test: 7.5 V
Current - Test: 300 mA
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PD85025C PD85025C.pdf
PD85025C
Виробник: STMicroelectronics
Description: FET RF 40V 945MHZ M243
товару немає в наявності
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PD85015TR-E CD00185996.pdf
PD85015TR-E
Виробник: STMicroelectronics
Description: TRANS RF N-CH FET POWERSO-10RF
товару немає в наявності
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PD55015TR-E en.CD00128612.pdf
PD55015TR-E
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 12.5V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 5A
Frequency: 500MHz
Power - Output: 15W
Gain: 14dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 40 V
Voltage - Test: 12.5 V
Current - Test: 150 mA
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
600+1069.53 грн
Мінімальне замовлення: 600
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ST26025A ST26025A.pdf
ST26025A
Виробник: STMicroelectronics
Description: TRANS PNP DARL 100V 20A TO-3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Transistor Type: PNP - Darlington
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
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PD20010S-E en.CD00228754.pdf
PD20010S-E
Виробник: STMicroelectronics
Description: TRANS RF N-CH FET POWERSO-10RF
товару немає в наявності
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ST5027 Power%20Bipolar%20Transistors.pdf
ST5027
Виробник: STMicroelectronics
Description: TRANS NPN 800V 3A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 90 W
товару немає в наявності
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PD20015-E
PD20015-E
Виробник: STMicroelectronics
Description: TRANS RF PWR N-CH POWERSO-10RF
товару немає в наявності
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PD20015S-E en.CD00173496.pdf
PD20015S-E
Виробник: STMicroelectronics
Description: TRANS RF N-CH FET POWERSO-10RF
товару немає в наявності
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SD2931-11 SD2931-11.pdf
SD2931-11
Виробник: STMicroelectronics
Description: RF MOSFET 50V M246
Packaging: Box
Package / Case: M246
Current Rating (Amps): 20A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: M246
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 250 mA
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PD57006STR-E PD57006%28S%29-E.pdf
PD57006STR-E
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 1A
Frequency: 945MHz
Power - Output: 6W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 70 mA
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PD85035C en.CD00176191.pdf
PD85035C
Виробник: STMicroelectronics
Description: FET RF 40V 945MHZ M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 8A
Frequency: 945MHz
Power - Output: 15W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: M243
Part Status: Obsolete
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 350 mA
товару немає в наявності
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START499D CD00187074.pdf
START499D
Виробник: STMicroelectronics
Description: TRANS RF NPN 4.5V 1A SOT-89
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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PD54003S-E en.CD00100209.pdf
PD54003S-E
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 7.5V PWRSO-10RF
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Current Rating (Amps): 4A
Frequency: 500MHz
Power - Output: 3W
Gain: 12dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 25 V
Voltage - Test: 7.5 V
Current - Test: 50 mA
товару немає в наявності
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PD85035TR-E en.CD00162008.pdf
PD85035TR-E
Виробник: STMicroelectronics
Description: TRANS RF N-CH FET POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 8A
Frequency: 870MHz
Power - Output: 15W
Gain: 17dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Active
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 350 mA
товару немає в наявності
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PD20010-E radio-frequency-transistors.html
PD20010-E
Виробник: STMicroelectronics
Description: TRANS RF N-CH FET POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 5A
Frequency: 2GHz
Power - Output: 10W
Gain: 11dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 150 mA
товару немає в наявності
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P0115DA 1AA3 CD00217835.pdf
P0115DA 1AA3
Виробник: STMicroelectronics
Description: IC SCR 0.8A 400V TO-92
товару немає в наявності
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BTB06-800SWRG bta06.pdf
BTB06-800SWRG
Виробник: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
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STF30NM60N en.CD00174866.pdf
STF30NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
товару немає в наявності
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STI21NM60ND STx21NM60ND_Rev3.pdf
STI21NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 17A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
товару немає в наявності
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STP6NK90ZFP description en.CD00003175.pdf
STP6NK90ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 900V 5.8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 60.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 548 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+283.21 грн
50+139.01 грн
100+126.03 грн
500+96.94 грн
Мінімальне замовлення: 2
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STP7NK80ZFP description en.CD00003046.pdf
STP7NK80ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5.2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
на замовлення 188 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+273.39 грн
50+133.70 грн
100+121.14 грн
Мінімальне замовлення: 2
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STD17NF03L-1 STD17NF03L%28-1%29.pdf
STD17NF03L-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 17A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
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STD70N02L-1 en.CD00067209.pdf
STD70N02L-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 25V 60A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 16 V
товару немає в наявності
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STB7NK80Z-1 en.CD00003046.pdf
STB7NK80Z-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5.2A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
товару немає в наявності
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STP9NK70ZFP en.CD00002909.pdf
STP9NK70ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 700V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
на замовлення 984 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+252.11 грн
50+113.38 грн
100+113.04 грн
500+105.26 грн
Мінімальне замовлення: 2
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STF6N62K3 en.CD00195598.pdf
STF6N62K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 5.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.28Ohm @ 2.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
на замовлення 597 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+66.30 грн
50+62.96 грн
100+62.31 грн
500+57.28 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STD2NC45-1 en.CD00003138.pdf
STD2NC45-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 450V 1.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 664 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+114.59 грн
75+49.03 грн
150+43.88 грн
525+34.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF60N55F3 en.CD00152203.pdf
STF60N55F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 42A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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STF30NM60ND en.CD00174884.pdf
STF30NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
товару немає в наявності
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STD2NK60Z-1 en.CD00003700.pdf
STD2NK60Z-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 1.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
товару немає в наявності
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STF6NK70Z en.CD00043979.pdf
STF6NK70Z
Виробник: STMicroelectronics
Description: MOSFET N-CH 700V 5A TO220FP
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STP9NK50ZFP en.CD00002970.pdf
STP9NK50ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 7.2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+200.54 грн
50+90.61 грн
100+86.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP75NF68 en.CD00205590.pdf
STP75NF68
Виробник: STMicroelectronics
Description: MOSFET N-CH 68V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 40A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
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STF6NM60N en.CD00157375.pdf
STF6NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 4.6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
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STD1NK60-1 std1nk60-1.pdf
STD1NK60-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
на замовлення 1851 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.23 грн
75+49.43 грн
150+44.25 грн
525+34.61 грн
1050+31.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF2HNK60Z stf2hnk60z.pdf
STF2HNK60Z
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 670 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+76.94 грн
50+49.11 грн
100+48.46 грн
500+44.56 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STF2NK60Z en.CD00003700.pdf
STF2NK60Z
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 1.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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STP4NK50ZFP en.CD00003100.pdf
STP4NK50ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
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TIP35CP en.CD00195733.pdf
TIP35CP
Виробник: STMicroelectronics
Description: TRANS NPN 100V 25A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-3P
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
на замовлення 195 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+256.20 грн
30+134.52 грн
120+109.79 грн
Мінімальне замовлення: 2
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STP5NK50ZFP description en.CD00003019.pdf
STP5NK50ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 4.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
на замовлення 833 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+203.82 грн
50+93.81 грн
100+87.15 грн
500+65.84 грн
Мінімальне замовлення: 2
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IRF630FP en.CD00000701.pdf
IRF630FP
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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STP7NK40ZFP en.CD00003040.pdf
STP7NK40ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 5.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
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STP14NF12FP STP14NF12%28FP%29.pdf
STP14NF12FP
Виробник: STMicroelectronics
Description: MOSFET N-CH 120V 8.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
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STP14NF12 STP14NF12%28FP%29.pdf
STP14NF12
Виробник: STMicroelectronics
Description: MOSFET N-CH 120V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 7A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
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STP5NK65ZFP en.CD00230219.pdf
STP5NK65ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 4.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
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STF20NF06L en.CD00047689.pdf
STF20NF06L
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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STP36NF06FP en.CD00003408.pdf
STP36NF06FP
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 18A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
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STP8NS25FP en.CD00002371.pdf
STP8NS25FP
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 51.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
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STGB18N40LZ-1 en.CD00182201.pdf
STGB18N40LZ-1
Виробник: STMicroelectronics
Description: IGBT 420V 30A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.7V @ 4.5V, 10A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 650ns/13.5µs
Test Condition: 300V, 10A, 5V
Gate Charge: 29 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 420 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
товару немає в наявності
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STI90N4F3 CD00177924.pdf
STI90N4F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A I2PAK
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STP5NK80ZFP description en.CD00003038.pdf
STP5NK80ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 4.3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.15A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 792 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.78 грн
50+92.00 грн
100+90.27 грн
500+78.22 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STP11NK40ZFP en.CD00003028.pdf
STP11NK40ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
на замовлення 1018 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+207.91 грн
50+78.11 грн
100+76.39 грн
500+68.91 грн
1000+64.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP4NK80ZFP ST%28D%2CP%294NK80Z%28-1%2CFP%29.pdf
STP4NK80ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
на замовлення 1599 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+215.27 грн
50+103.41 грн
100+93.28 грн
500+70.86 грн
1000+65.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP70N10F4 en.CD00218149.pdf
STP70N10F4
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 65A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
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