Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (129402) > Сторінка 365 з 2157
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPC564A80L7COBY | STMicroelectronics |
Description: IC MCU 32BIT 4MB FLASH 176LQFPProgram Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 192K x 8 Program Memory Size: 4MB (4M x 8) Speed: 120MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Packaging: Tray Qualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Number of I/O: 118 Supplier Device Package: 176-LQFP (24x24) Peripherals: DMA, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, LINbus, SCI, SPI Voltage - Supply (Vcc/Vdd): 1.14V ~ 1.32V Core Size: 32-Bit Single-Core Data Converters: A/D 34x12b Core Processor: e200z4 |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||
|
SPC56EL60L3CBFQY | STMicroelectronics |
Description: IC MCU 32BIT 1MB FLASH 100LQFP |
товару немає в наявності |
Мінімальне замовлення: 540 шт В кошику од. на суму грн. | ||||||||||
|
SPC56EL60L3CBFSY | STMicroelectronics |
Description: IC MCU 32BIT 1MB FLASH 100LQFP |
товару немає в наявності |
Мінімальне замовлення: 540 шт В кошику од. на суму грн. | ||||||||||
|
SPC56EL60L3CCFQY | STMicroelectronics |
Description: IC MCU 32BIT 1MB FLASH 100LQFP |
товару немає в наявності |
Мінімальне замовлення: 540 шт В кошику од. на суму грн. | ||||||||||
|
SPC56EL60L5BBFQY | STMicroelectronics |
Description: IC MCU 32BIT 1MB FLASH 144LQFP |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||
|
SPC56EL60L5CBFQY | STMicroelectronics |
Description: IC MCU 32BIT 1MB FLASH 144LQFP |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||
|
SPC56EL60L5CBOSY | STMicroelectronics |
Description: IC MCU 32BIT 1MB FLASH 144LQFP |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||
| STA1060N1TX | STMicroelectronics | Description: IC DSP/MCU INFOTAINMENT |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||
| STA1052Z2 | STMicroelectronics | Description: IC DSP/MCU INFOTAINMENT 144LQFP |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | |||||||||||
|
T2550-12G-TR | STMicroelectronics |
Description: TRIAC ALTERNSTR 1.2KV 25A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 240A, 252A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 1.2 kV |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
ACS108-8SA | STMicroelectronics |
Description: TRIAC SENS GATE 800V 0.45A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -30°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92 Part Status: Obsolete Current - On State (It (RMS)) (Max): 450 mA Voltage - Off State: 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
T2550-12G | STMicroelectronics |
Description: TRIAC ALTERNSTR 1.2KV 25A D2PAKVoltage - Off State: 1.2 kV Current - On State (It (RMS)) (Max): 25 A Part Status: Active Supplier Device Package: D2PAK Voltage - Gate Trigger (Vgt) (Max): 1.3 V Current - Non Rep. Surge 50, 60Hz (Itsm): 240A, 252A Current - Gate Trigger (Igt) (Max): 50 mA Current - Hold (Ih) (Max): 60 mA Operating Temperature: -40°C ~ 125°C (TJ) Configuration: Single Triac Type: Alternistor - Snubberless Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
на замовлення 21557 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
T2550-12T | STMicroelectronics |
Description: TRIAC ALTERNSTR 1.2KV 25A TO220Voltage - Off State: 1.2 kV Current - On State (It (RMS)) (Max): 25 A Part Status: Active Supplier Device Package: TO-220 Voltage - Gate Trigger (Vgt) (Max): 1.3 V Current - Non Rep. Surge 50, 60Hz (Itsm): 240A, 252A Current - Gate Trigger (Igt) (Max): 50 mA Current - Hold (Ih) (Max): 60 mA Operating Temperature: -40°C ~ 125°C (TJ) Configuration: Single Triac Type: Alternistor - Snubberless Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 978 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
FERD15S50DJF-TR | STMicroelectronics |
Description: DIODE FERD 50V 15A POWERFLATSupplier Device Package: PowerFlat™ (5x6) Current - Average Rectified (Io): 15A Technology: FERD (Field Effect Rectifier Diode) Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 650 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: 150°C (Max) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
FERD30S50DJF-TR | STMicroelectronics |
Description: DIODE FERD 50V 30A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: FERD (Field Effect Rectifier Diode) Current - Average Rectified (Io): 30A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A Current - Reverse Leakage @ Vr: 800 µA @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
FERD40M45CG-TR | STMicroelectronics |
Description: DIODE ARRAY FERD 45V 20A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: FERD (Field Effect Rectifier Diode) Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 20 A Current - Reverse Leakage @ Vr: 650 µA @ 45 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
|
FERD40U45CG-TR | STMicroelectronics |
Description: DIODE ARRAY FERD 45V 20A D2PAKCurrent - Reverse Leakage @ Vr: 1.8 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: D2PAK Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: FERD (Field Effect Rectifier Diode) Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
HSP061-4M10Y | STMicroelectronics |
Description: TVS DIODE 3VWM 15VC 10UQFNPart Status: Active Power Line Protection: Yes Voltage - Clamping (Max) @ Ipp: 15V Voltage - Breakdown (Min): 6V Unidirectional Channels: 4 Supplier Device Package: 10-UQFN (2.5x1) Voltage - Reverse Standoff (Typ): 3V Current - Peak Pulse (10/1000µs): 1A (8/20µs) Capacitance @ Frequency: 0.6pF @ 1MHz Applications: Automotive, HDMI Operating Temperature: -40°C ~ 150°C (TJ) Type: Steering (Rail to Rail) Mounting Type: Surface Mount Package / Case: 10-XFDFN Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
FERD40M45CT | STMicroelectronics |
Description: DIODE ARRAY FERD 45V 20A TO-220Current - Reverse Leakage @ Vr: 650 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: FERD (Field Effect Rectifier Diode) Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 1733 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
FERD40U45CT | STMicroelectronics |
Description: DIODE ARRAY FERD 45V 20A TO220Current - Reverse Leakage @ Vr: 1.8 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Last Time Buy Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: FERD (Field Effect Rectifier Diode) Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
FERD60U45CT | STMicroelectronics |
Description: DIODE ARRAY FERD 45V 30A TO220Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Last Time Buy Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: FERD (Field Effect Rectifier Diode) Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
STPSC10H065DI | STMicroelectronics |
Description: DIODE SIC 650V 10A TO220AC INSPackaging: Tube Package / Case: TO-220-2 Insulated, TO-220AC Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC ins Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
STPSC4H065DI | STMicroelectronics |
Description: DIODE SIC 650V 4A TO220AC INSCurrent - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-220AC ins Current - Average Rectified (Io): 4A Technology: SiC (Silicon Carbide) Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Insulated, TO-220AC Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
STPSC6H065DI | STMicroelectronics |
Description: DIODE SIC 650V 6A TO220AC INSPackaging: Tube Package / Case: TO-220-2 Insulated, TO-220AC Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC ins Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
на замовлення 401 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
STPSC8H065DI | STMicroelectronics |
Description: DIODE SIC 650V 8A TO220AC INSCurrent - Reverse Leakage @ Vr: 80 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-220AC ins Current - Average Rectified (Io): 8A Technology: SiC (Silicon Carbide) Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Insulated, TO-220AC Packaging: Tube |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
STTH1008DTI | STMicroelectronics |
Description: DIODE ARRAY GP 800V 10A TO-220ACCurrent - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 20 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 10 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
STTH30ST06WY | STMicroelectronics |
Description: DIODE GEN PURP 600V 30A DO247Packaging: Tube Package / Case: DO-247-2 (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: DO-247 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
SMP0900SCMC | STMicroelectronics |
Description: THYRISTOR 90V 400A DO214AAPackaging: Tape & Reel (TR) Capacitance: 80pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 98V Voltage - Off State: 90V Voltage - On State: 3 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
SMP1300SCMC | STMicroelectronics |
Description: THYRISTOR 130V 400A DO214AAPackaging: Tape & Reel (TR) Capacitance: 75pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 160V Voltage - Off State: 130V Voltage - On State: 3 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
|
SMP1800SCMC | STMicroelectronics |
Description: THYRISTOR 180V 400A DO-214AAPackaging: Tape & Reel (TR) Capacitance: 70pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 220V Voltage - Off State: 180V Voltage - On State: 3 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
|
SMP2300SCMC | STMicroelectronics |
Description: THYRISTOR 230V 400A DO-214AAPackaging: Tape & Reel (TR) Capacitance: 45pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 260V Voltage - Off State: 230V Voltage - On State: 3 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
|
SMP2600SCMC | STMicroelectronics |
Description: THYRISTOR 260V 400A DO-214AACurrent - Hold (Ih): 150 mA Supplier Device Package: SMB Voltage - On State: 3 V Voltage - Off State: 260V Voltage - Breakover: 300V Number of Elements: 1 Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Capacitance: 40pF Packaging: Tape & Reel (TR) Current - Peak Pulse (8/20µs): 400 A Current - Peak Pulse (10/1000µs): 100 A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
|
ESDAVLC8-1BT2Y | STMicroelectronics |
Description: TVS DIODE 3VWM SOD882TPackaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 125°C (TJ) Capacitance @ Frequency: 4.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SOD-882T Bidirectional Channels: 1 Voltage - Breakdown (Min): 8.5V Power - Peak Pulse: 30W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
STB100N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 80A D2PAKGate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
STB120N10F4 | STMicroelectronics |
Description: MOSFET N-CH 100V D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Power Dissipation (Max): 300W (Tc) Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
| STB6N65K3 | STMicroelectronics |
Description: MOSFET N-CH 650V DPAK Part Status: Active Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
STD25N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 25A DPAKGate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
STD30N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 32A DPAKPower Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4.5V @ 250µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
STD45N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 45A DPAKInput Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
| STD7NM64N | STMicroelectronics |
Description: MOSFET N-CH 640V 5A DPAK Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 640 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
|
STD80N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 70A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
|
|
STH140N8F7-2 | STMicroelectronics |
Description: MOSFET N-CH 80V 90A H2PAK-2Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: H2Pak-2 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 200W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
|
|
STH360N4F6-2 | STMicroelectronics |
Description: MOSFET N-CH 40V 180A H2PAK-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
STH400N4F6-2 | STMicroelectronics |
Description: MOSFET N-CH 40V 180A H2PAK-2Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: H2Pak-2 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
| STH400N4F6-6 | STMicroelectronics |
Description: MOSFET N-CH 40V 180A H2PAK-6 Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: H2PAK-6 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
|
|
STL19N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 12.5A POWERFLAT Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PowerFlat™ (8x8) HV Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.8W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 12.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
STL2N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
STL30N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 30A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
STL31N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 15A PWRFLAT88Packaging: Tape & Reel (TR) Package / Case: 4-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 162mOhm @ 11A, 10V Power Dissipation (Max): 2.8W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
|
STL34N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 3.2A PWRFLAT88Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PowerFlat™ (8x8) HV Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Power Dissipation (Max): 2.8W (Ta), 150W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| STS7N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 17A 8SOIC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
STF10N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 8A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V |
на замовлення 992 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
STF12NM65 | STMicroelectronics |
Description: MOSFET N-CH 650V TO220FP Part Status: Active Supplier Device Package: TO-220FP Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
STF25N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 19A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
|
STF30N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 24A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 93 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
STF45N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 30A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): 20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
STF6N68K3 | STMicroelectronics | Description: MOSFET N-CH 680V TO-220FP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
|
STF80N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 40A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
|
STFI13N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 12A I2PAKFPPackaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-281 (I2PAKFP) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||
|
STFI20NM65N | STMicroelectronics |
Description: MOSFET N-CH 650V 15A I2PAKFPPackaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 7.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. |
| SPC564A80L7COBY |
![]() |
Виробник: STMicroelectronics
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, LINbus, SCI, SPI
Voltage - Supply (Vcc/Vdd): 1.14V ~ 1.32V
Core Size: 32-Bit Single-Core
Data Converters: A/D 34x12b
Core Processor: e200z4
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, LINbus, SCI, SPI
Voltage - Supply (Vcc/Vdd): 1.14V ~ 1.32V
Core Size: 32-Bit Single-Core
Data Converters: A/D 34x12b
Core Processor: e200z4
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| SPC56EL60L3CBFQY |
![]() |
Виробник: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Description: IC MCU 32BIT 1MB FLASH 100LQFP
товару немає в наявності
Мінімальне замовлення: 540 шт
В кошику
од. на суму грн.
| SPC56EL60L3CBFSY |
![]() |
Виробник: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Description: IC MCU 32BIT 1MB FLASH 100LQFP
товару немає в наявності
Мінімальне замовлення: 540 шт
В кошику
од. на суму грн.
| SPC56EL60L3CCFQY |
![]() |
Виробник: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Description: IC MCU 32BIT 1MB FLASH 100LQFP
товару немає в наявності
Мінімальне замовлення: 540 шт
В кошику
од. на суму грн.
| SPC56EL60L5BBFQY |
![]() |
Виробник: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Description: IC MCU 32BIT 1MB FLASH 144LQFP
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| SPC56EL60L5CBFQY |
![]() |
Виробник: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Description: IC MCU 32BIT 1MB FLASH 144LQFP
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| SPC56EL60L5CBOSY |
![]() |
Виробник: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Description: IC MCU 32BIT 1MB FLASH 144LQFP
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| STA1060N1TX |
Виробник: STMicroelectronics
Description: IC DSP/MCU INFOTAINMENT
Description: IC DSP/MCU INFOTAINMENT
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| STA1052Z2 |
Виробник: STMicroelectronics
Description: IC DSP/MCU INFOTAINMENT 144LQFP
Description: IC DSP/MCU INFOTAINMENT 144LQFP
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| T2550-12G-TR |
![]() |
Виробник: STMicroelectronics
Description: TRIAC ALTERNSTR 1.2KV 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 240A, 252A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
Description: TRIAC ALTERNSTR 1.2KV 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 240A, 252A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 115.24 грн |
| 2000+ | 104.37 грн |
| ACS108-8SA |
![]() |
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 0.45A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -30°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 450 mA
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 0.45A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -30°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 450 mA
Voltage - Off State: 800 V
товару немає в наявності
В кошику
од. на суму грн.
| T2550-12G |
![]() |
Виробник: STMicroelectronics
Description: TRIAC ALTERNSTR 1.2KV 25A D2PAK
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: D2PAK
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 240A, 252A
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Hold (Ih) (Max): 60 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Alternistor - Snubberless
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: TRIAC ALTERNSTR 1.2KV 25A D2PAK
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: D2PAK
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 240A, 252A
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Hold (Ih) (Max): 60 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Alternistor - Snubberless
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 21557 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 261.34 грн |
| 50+ | 129.63 грн |
| 100+ | 117.84 грн |
| 500+ | 98.75 грн |
| T2550-12T |
![]() |
Виробник: STMicroelectronics
Description: TRIAC ALTERNSTR 1.2KV 25A TO220
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-220
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 240A, 252A
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Hold (Ih) (Max): 60 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Alternistor - Snubberless
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRIAC ALTERNSTR 1.2KV 25A TO220
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-220
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 240A, 252A
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Hold (Ih) (Max): 60 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Alternistor - Snubberless
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 978 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 280.66 грн |
| 50+ | 138.16 грн |
| 100+ | 125.38 грн |
| 500+ | 96.65 грн |
| FERD15S50DJF-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE FERD 50V 15A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Current - Average Rectified (Io): 15A
Technology: FERD (Field Effect Rectifier Diode)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 650 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Description: DIODE FERD 50V 15A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Current - Average Rectified (Io): 15A
Technology: FERD (Field Effect Rectifier Diode)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 650 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FERD30S50DJF-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE FERD 50V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 50 V
Description: DIODE FERD 50V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 50 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FERD40M45CG-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE ARRAY FERD 45V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 20 A
Current - Reverse Leakage @ Vr: 650 µA @ 45 V
Description: DIODE ARRAY FERD 45V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 20 A
Current - Reverse Leakage @ Vr: 650 µA @ 45 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FERD40U45CG-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE ARRAY FERD 45V 20A D2PAK
Current - Reverse Leakage @ Vr: 1.8 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: FERD (Field Effect Rectifier Diode)
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY FERD 45V 20A D2PAK
Current - Reverse Leakage @ Vr: 1.8 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: FERD (Field Effect Rectifier Diode)
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 63.39 грн |
| 2000+ | 56.38 грн |
| HSP061-4M10Y |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 15VC 10UQFN
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: 10-UQFN (2.5x1)
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: Automotive, HDMI
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Tape & Reel (TR)
Description: TVS DIODE 3VWM 15VC 10UQFN
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: 10-UQFN (2.5x1)
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: Automotive, HDMI
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.58 грн |
| 6000+ | 12.28 грн |
| FERD40M45CT |
![]() |
Виробник: STMicroelectronics
Description: DIODE ARRAY FERD 45V 20A TO-220
Current - Reverse Leakage @ Vr: 650 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: FERD (Field Effect Rectifier Diode)
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY FERD 45V 20A TO-220
Current - Reverse Leakage @ Vr: 650 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: FERD (Field Effect Rectifier Diode)
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1733 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 177.06 грн |
| 50+ | 83.33 грн |
| 100+ | 74.85 грн |
| 500+ | 56.26 грн |
| 1000+ | 51.77 грн |
| FERD40U45CT |
![]() |
Виробник: STMicroelectronics
Description: DIODE ARRAY FERD 45V 20A TO220
Current - Reverse Leakage @ Vr: 1.8 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Last Time Buy
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: FERD (Field Effect Rectifier Diode)
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY FERD 45V 20A TO220
Current - Reverse Leakage @ Vr: 1.8 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Last Time Buy
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: FERD (Field Effect Rectifier Diode)
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FERD60U45CT |
![]() |
Виробник: STMicroelectronics
Description: DIODE ARRAY FERD 45V 30A TO220
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Last Time Buy
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: FERD (Field Effect Rectifier Diode)
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY FERD 45V 30A TO220
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Last Time Buy
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: FERD (Field Effect Rectifier Diode)
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| STPSC10H065DI |
![]() |
Виробник: STMicroelectronics
Description: DIODE SIC 650V 10A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIC 650V 10A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 323.19 грн |
| 50+ | 159.96 грн |
| 100+ | 145.31 грн |
| STPSC4H065DI |
![]() |
Виробник: STMicroelectronics
Description: DIODE SIC 650V 4A TO220AC INS
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC ins
Current - Average Rectified (Io): 4A
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Packaging: Tube
Description: DIODE SIC 650V 4A TO220AC INS
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC ins
Current - Average Rectified (Io): 4A
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| STPSC6H065DI |
![]() |
Виробник: STMicroelectronics
Description: DIODE SIC 650V 6A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIC 650V 6A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 401 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 248.96 грн |
| 50+ | 120.27 грн |
| 100+ | 108.70 грн |
| STPSC8H065DI |
![]() |
Виробник: STMicroelectronics
Description: DIODE SIC 650V 8A TO220AC INS
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC ins
Current - Average Rectified (Io): 8A
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Packaging: Tube
Description: DIODE SIC 650V 8A TO220AC INS
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC ins
Current - Average Rectified (Io): 8A
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Packaging: Tube
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 299.22 грн |
| 50+ | 146.93 грн |
| 100+ | 133.26 грн |
| 500+ | 102.60 грн |
| STTH1008DTI |
![]() |
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 800V 10A TO-220AC
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Description: DIODE ARRAY GP 800V 10A TO-220AC
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
товару немає в наявності
В кошику
од. на суму грн.
| STTH30ST06WY |
![]() |
Виробник: STMicroelectronics
Description: DIODE GEN PURP 600V 30A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 30A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMP0900SCMC |
![]() |
Виробник: STMicroelectronics
Description: THYRISTOR 90V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 80pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 98V
Voltage - Off State: 90V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 90V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 80pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 98V
Voltage - Off State: 90V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
товару немає в наявності
В кошику
од. на суму грн.
| SMP1300SCMC |
![]() |
Виробник: STMicroelectronics
Description: THYRISTOR 130V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 160V
Voltage - Off State: 130V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 130V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 160V
Voltage - Off State: 130V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SMP1800SCMC |
![]() |
Виробник: STMicroelectronics
Description: THYRISTOR 180V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 70pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 180V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 180V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 70pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 180V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SMP2300SCMC |
![]() |
Виробник: STMicroelectronics
Description: THYRISTOR 230V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 45pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 260V
Voltage - Off State: 230V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 230V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 45pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 260V
Voltage - Off State: 230V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SMP2600SCMC |
![]() |
Виробник: STMicroelectronics
Description: THYRISTOR 260V 400A DO-214AA
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3 V
Voltage - Off State: 260V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 40pF
Packaging: Tape & Reel (TR)
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Description: THYRISTOR 260V 400A DO-214AA
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3 V
Voltage - Off State: 260V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 40pF
Packaging: Tape & Reel (TR)
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| ESDAVLC8-1BT2Y |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM SOD882T
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 125°C (TJ)
Capacitance @ Frequency: 4.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOD-882T
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3VWM SOD882T
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 125°C (TJ)
Capacitance @ Frequency: 4.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOD-882T
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| STB100N10F7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 80A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
Description: MOSFET N-CH 100V 80A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 72.65 грн |
| STB120N10F4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 100V D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STB6N65K3 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V DPAK
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 650V DPAK
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| STD25N10F7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 25A DPAK
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 25A DPAK
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 31.13 грн |
| STD30N10F7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 32A DPAK
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Description: MOSFET N-CH 100V 32A DPAK
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
товару немає в наявності
В кошику
од. на суму грн.
| STD45N10F7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 45A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 45A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 39.39 грн |
| 5000+ | 35.55 грн |
| STD7NM64N |
Виробник: STMicroelectronics
Description: MOSFET N-CH 640V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 640 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 640V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 640 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STD80N10F7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 70A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Description: MOSFET N-CH 100V 70A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STH140N8F7-2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 90A H2PAK-2
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Description: MOSFET N-CH 80V 90A H2PAK-2
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STH360N4F6-2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-2
Description: MOSFET N-CH 40V 180A H2PAK-2
товару немає в наявності
В кошику
од. на суму грн.
| STH400N4F6-2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-2
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V
Description: MOSFET N-CH 40V 180A H2PAK-2
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STH400N4F6-6 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-6
Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 40V 180A H2PAK-6
Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STL19N65M5 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12.5A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 12.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 650V 12.5A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 12.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STL2N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 2A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
Description: MOSFET N-CH 800V 2A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 28.85 грн |
| STL30N10F7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Description: MOSFET N-CH 100V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 28.98 грн |
| STL31N65M5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 15A PWRFLAT88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 162mOhm @ 11A, 10V
Power Dissipation (Max): 2.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V
Description: MOSFET N-CH 650V 15A PWRFLAT88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 162mOhm @ 11A, 10V
Power Dissipation (Max): 2.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STL34N65M5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 3.2A PWRFLAT88
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Description: MOSFET N-CH 650V 3.2A PWRFLAT88
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STF10N95K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
Description: MOSFET N-CH 950V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.46 грн |
| 50+ | 116.95 грн |
| 100+ | 105.84 грн |
| 500+ | 81.01 грн |
| STF12NM65 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V TO220FP
Part Status: Active
Supplier Device Package: TO-220FP
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 650V TO220FP
Part Status: Active
Supplier Device Package: TO-220FP
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| STF25N10F7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 19A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 100V 19A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| STF30N10F7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 24A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 100V 24A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 93 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.53 грн |
| 10+ | 116.15 грн |
| STF45N10F7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 30A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 100V 30A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| STF6N68K3 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 680V TO-220FP
Description: MOSFET N-CH 680V TO-220FP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STF80N10F7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 40A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Description: MOSFET N-CH 100V 40A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STFI13N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 12A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 800V 12A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| STFI20NM65N |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 15A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 50 V
Description: MOSFET N-CH 650V 15A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.























