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P6SMB39CAHR5G P6SMB39CAHR5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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S15DLWHRVG S15DLWHRVG Taiwan Semiconductor Corporation S15DLW%20SERIES_A1610.pdf Description: DIODE GEN PURP 200V 1.5A SOD123W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
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S15DLWHRVG S15DLWHRVG Taiwan Semiconductor Corporation S15DLW%20SERIES_A1610.pdf Description: DIODE GEN PURP 200V 1.5A SOD123W
на замовлення 10079 шт:
термін постачання 21-31 дні (днів)
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GBPC1508W T0G GBPC1508W T0G Taiwan Semiconductor Corporation GBPC%2015005%20SERIES_K14.pdf Description: BRIDGE RECT 1P 800V 15A GBPC-W
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BZT52C7V5S RRG BZT52C7V5S RRG Taiwan Semiconductor Corporation pdf.php?pn=BZT52C7V5S Description: DIODE ZENER 7.5V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
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BZT52C75S RRG BZT52C75S RRG Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_I1804.pdf Description: DIODE ZENER 75V 200MW SOD323F
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BZT52C75K RKG BZT52C75K RKG Taiwan Semiconductor Corporation BZT52C2V7K%20SERIES_F1806.pdf Description: DIODE ZENER 75V 200MW SOD523F
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HT11G R0G Taiwan Semiconductor Corporation HT11G%20SERIES_G15.pdf Description: DIODE GEN PURP 50V 1A TS-1
товару немає в наявності
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SK39A M2G SK39A M2G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39AHM2G SK39AHM2G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39A R3G SK39A R3G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39AHR3G SK39AHR3G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39B M4G SK39B M4G Taiwan Semiconductor Corporation SK32B%20SERIES_P2212.pdf Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39B R5G SK39B R5G Taiwan Semiconductor Corporation SK32B%20SERIES_P2212.pdf Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39BHM4G SK39BHM4G Taiwan Semiconductor Corporation SK32BH%20SERIES_B2212.pdf Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39BHR5G SK39BHR5G Taiwan Semiconductor Corporation SK32BH%20SERIES_B2212.pdf Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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BZT52C39S RRG BZT52C39S RRG Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_J2212.pdf Description: DIODE ZENER 39V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
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BZT52C39S RRG BZT52C39S RRG Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_J2212.pdf Description: DIODE ZENER 39V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
на замовлення 56 шт:
термін постачання 21-31 дні (днів)
12+26.99 грн
16+19.27 грн
Мінімальне замовлення: 12
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BZT52C39-G RHG BZT52C39-G RHG Taiwan Semiconductor Corporation BZT52C2V4-G%20series_B1601.pdf Description: DIODE ZENER 39V 350MW SOD123
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BZT52C39 RHG BZT52C39 RHG Taiwan Semiconductor Corporation BZT52C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 39V 500MW SOD123F
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TST40L45CW C0G TST40L45CW C0G Taiwan Semiconductor Corporation TST40L45CW%20SERIES_B15.pdf Description: DIODE SCHOTTKY 45V 20A TO220AB
на замовлення 728 шт:
термін постачання 21-31 дні (днів)
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LSR104 L0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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LSR104-J0 L0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 1A MELF
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TSM2N7002KCU TSM2N7002KCU Taiwan Semiconductor Corporation TSM2N7002KCU_A2007.pdf Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
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TSM2N7002KCU TSM2N7002KCU Taiwan Semiconductor Corporation TSM2N7002KCU_A2007.pdf Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
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SRS1620 MNG SRS1620 MNG Taiwan Semiconductor Corporation SRS1620%20SERIES_L2103.pdf Description: DIODE ARRAY SCHOTTKY 20V TO263AB
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SRS1620HMNG SRS1620HMNG Taiwan Semiconductor Corporation SRS1620%20SERIES_L2103.pdf Description: DIODE ARRAY SCHOTTKY 20V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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UF1K A0G UF1K A0G Taiwan Semiconductor Corporation UF1A%20SERIES_G2104.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MBRS2535CT MNG MBRS2535CT MNG Taiwan Semiconductor Corporation MBRS2535CT%20SERIES_M15.pdf Description: DIODE ARRAY SCHOTTKY 35V TO263AB
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P6SMB160CA M4G P6SMB160CA M4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 136VWM 219VC DO214AA
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P6SMB160CAHM4G P6SMB160CAHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 136VWM 219VC DO214AA
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P6SMB160CA R5G P6SMB160CA R5G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 136VWM 219VC DO214AA
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P6SMB160CAHR5G P6SMB160CAHR5G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 136VWM 219VC DO214AA
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S2MFS M3G S2MFS M3G Taiwan Semiconductor Corporation Description: 2A, 1000V, STANDARD RECOVERY REC
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S2MFS M3G S2MFS M3G Taiwan Semiconductor Corporation Description: 2A, 1000V, STANDARD RECOVERY REC
на замовлення 3415 шт:
термін постачання 21-31 дні (днів)
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1N4001G R0G 1N4001G R0G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 50
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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1N4001G R0G 1N4001G R0G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 50
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 5482 шт:
термін постачання 21-31 дні (днів)
11+30.17 грн
17+18.42 грн
100+9.67 грн
500+6.85 грн
1000+4.99 грн
2000+4.94 грн
Мінімальне замовлення: 11
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1N4007G R0G 1N4007G R0G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE GEN PURP 1A DO204AL
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BZW04-10 R0G BZW04-10 R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
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BZW04-10 R1G BZW04-10 R1G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 10.2V 16.7V DO204AL
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BZW04-110 R1G BZW04-110 R1G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 111V 179V DO204AL
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SMB10J24CA R5G SMB10J24CA R5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 24VWM 38.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.7A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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SMB10J24CA R5G SMB10J24CA R5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 24VWM 38.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.7A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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P4KE24CA R0G P4KE24CA R0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 20.5V 33.2V DO204AL
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SMAJ14CA R3G SMAJ14CA R3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ54CA R3G SMAJ54CA R3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 54VWM 87.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ64CA R3G SMAJ64CA R3G Taiwan Semiconductor Corporation SMAJ%20SERIES_S1901.pdf Description: TVS DIODE 64V 103V DO214AC
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PGSMAJ54CA E3G PGSMAJ54CA E3G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 54VWM 87.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PGSMAJ54CA E3G PGSMAJ54CA E3G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 54VWM 87.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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2A04G R0G 2A04G R0G Taiwan Semiconductor Corporation 2A01G%20SERIES_H14.pdf Description: DIODE GEN PURP 400V 2A DO204AC
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2A04G A0G 2A04G A0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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2A04GHR0G 2A04GHR0G Taiwan Semiconductor Corporation 2A01G%20SERIES_H14.pdf Description: DIODE GEN PURP 400V 2A DO204AC
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2A04GHA0G 2A04GHA0G Taiwan Semiconductor Corporation 2A01G%20SERIES_I2105.pdf Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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2A04G B0G 2A04G B0G Taiwan Semiconductor Corporation 2A01G%20SERIES_I2105.pdf Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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SMBJ160A M4G SMBJ160A M4G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 160V 259V DO214AA
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SMBJ160A R5G SMBJ160A R5G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 160V 259V DO214AA
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SMBJ160AHM4G SMBJ160AHM4G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 160V 259V DO214AA
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SMBJ160AHR5G SMBJ160AHR5G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 160V 259V DO214AA
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SMAJ64AHR3G SMAJ64AHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_S1901.pdf Description: TVS DIODE 64V 103V DO214AC
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SMAJ64AHR3G SMAJ64AHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_S1901.pdf Description: TVS DIODE 64V 103V DO214AC
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P6SMB39CAHR5G P6SMB%20SERIES_Q2209.pdf
P6SMB39CAHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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S15DLWHRVG S15DLW%20SERIES_A1610.pdf
S15DLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A SOD123W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
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S15DLWHRVG S15DLW%20SERIES_A1610.pdf
S15DLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A SOD123W
на замовлення 10079 шт:
термін постачання 21-31 дні (днів)
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GBPC1508W T0G GBPC%2015005%20SERIES_K14.pdf
GBPC1508W T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 15A GBPC-W
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BZT52C7V5S RRG pdf.php?pn=BZT52C7V5S
BZT52C7V5S RRG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
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BZT52C75S RRG BZT52C2V4S%20SERIES_I1804.pdf
BZT52C75S RRG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 200MW SOD323F
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BZT52C75K RKG BZT52C2V7K%20SERIES_F1806.pdf
BZT52C75K RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 200MW SOD523F
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HT11G R0G HT11G%20SERIES_G15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A TS-1
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SK39A M2G SK32A%20SERIES_V2102.pdf
SK39A M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39AHM2G SK32A%20SERIES_V2102.pdf
SK39AHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39A R3G SK32A%20SERIES_V2102.pdf
SK39A R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39AHR3G SK32A%20SERIES_V2102.pdf
SK39AHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39B M4G SK32B%20SERIES_P2212.pdf
SK39B M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39B R5G SK32B%20SERIES_P2212.pdf
SK39B R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39BHM4G SK32BH%20SERIES_B2212.pdf
SK39BHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39BHR5G SK32BH%20SERIES_B2212.pdf
SK39BHR5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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BZT52C39S RRG BZT52C2V4S%20SERIES_J2212.pdf
BZT52C39S RRG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
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BZT52C39S RRG BZT52C2V4S%20SERIES_J2212.pdf
BZT52C39S RRG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
на замовлення 56 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+26.99 грн
16+19.27 грн
Мінімальне замовлення: 12
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BZT52C39-G RHG BZT52C2V4-G%20series_B1601.pdf
BZT52C39-G RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 350MW SOD123
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BZT52C39 RHG BZT52C2V4%20SERIES_G1804.pdf
BZT52C39 RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW SOD123F
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TST40L45CW C0G TST40L45CW%20SERIES_B15.pdf
TST40L45CW C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 20A TO220AB
на замовлення 728 шт:
термін постачання 21-31 дні (днів)
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LSR104 L0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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LSR104-J0 L0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A MELF
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TSM2N7002KCU TSM2N7002KCU_A2007.pdf
TSM2N7002KCU
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
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TSM2N7002KCU TSM2N7002KCU_A2007.pdf
TSM2N7002KCU
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
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SRS1620 MNG SRS1620%20SERIES_L2103.pdf
SRS1620 MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 20V TO263AB
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SRS1620HMNG SRS1620%20SERIES_L2103.pdf
SRS1620HMNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 20V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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UF1K A0G UF1A%20SERIES_G2104.pdf
UF1K A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MBRS2535CT MNG MBRS2535CT%20SERIES_M15.pdf
MBRS2535CT MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 35V TO263AB
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P6SMB160CA M4G P6SMB%20SERIES_P2102.pdf
P6SMB160CA M4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
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P6SMB160CAHM4G P6SMB%20SERIES_P2102.pdf
P6SMB160CAHM4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
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P6SMB160CA R5G P6SMB%20SERIES_P2102.pdf
P6SMB160CA R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
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P6SMB160CAHR5G P6SMB%20SERIES_P2102.pdf
P6SMB160CAHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
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S2MFS M3G
S2MFS M3G
Виробник: Taiwan Semiconductor Corporation
Description: 2A, 1000V, STANDARD RECOVERY REC
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S2MFS M3G
S2MFS M3G
Виробник: Taiwan Semiconductor Corporation
Description: 2A, 1000V, STANDARD RECOVERY REC
на замовлення 3415 шт:
термін постачання 21-31 дні (днів)
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1N4001G R0G 1N4001G%20SERIES_P2104.pdf
1N4001G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 50
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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1N4001G R0G 1N4001G%20SERIES_P2104.pdf
1N4001G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 50
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 5482 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.17 грн
17+18.42 грн
100+9.67 грн
500+6.85 грн
1000+4.99 грн
2000+4.94 грн
Мінімальне замовлення: 11
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1N4007G R0G 1N4001G%20SERIES_P2104.pdf
1N4007G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO204AL
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BZW04-10 R0G BZW04%20SERIES_I15.pdf
BZW04-10 R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
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BZW04-10 R1G BZW04%20SERIES_I15.pdf
BZW04-10 R1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2V 16.7V DO204AL
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BZW04-110 R1G BZW04%20SERIES_I15.pdf
BZW04-110 R1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111V 179V DO204AL
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SMB10J24CA R5G SMB10J%20SERIES_B2102.pdf
SMB10J24CA R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.7A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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SMB10J24CA R5G SMB10J%20SERIES_B2102.pdf
SMB10J24CA R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.7A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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P4KE24CA R0G P4KE%20SERIES_M1602.pdf
P4KE24CA R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20.5V 33.2V DO204AL
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SMAJ14CA R3G SMAJ%20SERIES_U2102.pdf
SMAJ14CA R3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ54CA R3G SMAJ%20SERIES_U2102.pdf
SMAJ54CA R3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ64CA R3G SMAJ%20SERIES_S1901.pdf
SMAJ64CA R3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AC
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PGSMAJ54CA E3G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ54CA E3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PGSMAJ54CA E3G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ54CA E3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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2A04G R0G 2A01G%20SERIES_H14.pdf
2A04G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO204AC
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2A04G A0G
2A04G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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2A04GHR0G 2A01G%20SERIES_H14.pdf
2A04GHR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO204AC
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2A04GHA0G 2A01G%20SERIES_I2105.pdf
2A04GHA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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2A04G B0G 2A01G%20SERIES_I2105.pdf
2A04G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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SMBJ160A M4G SMBJ SERIES_Q2004.pdf
SMBJ160A M4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO214AA
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SMBJ160A R5G SMBJ SERIES_Q2004.pdf
SMBJ160A R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO214AA
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SMBJ160AHM4G SMBJ SERIES_Q2004.pdf
SMBJ160AHM4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO214AA
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SMBJ160AHR5G SMBJ SERIES_Q2004.pdf
SMBJ160AHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO214AA
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SMAJ64AHR3G SMAJ%20SERIES_S1901.pdf
SMAJ64AHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AC
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SMAJ64AHR3G SMAJ%20SERIES_S1901.pdf
SMAJ64AHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AC
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